NDB6050LL99Z datasheet, PDF - EEWORLD Datasheet

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NDB6050LL99Z: DescriptionPower Field-Effect Transistor, 48A I(D), 50V, 0.025ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, D2PAK-3; CategoryDiscrete semiconductor The transistor; File Size158KB，6 Pages; ManufacturerFairchild; Websitehttp://www.fairchildsemi.com/

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NDB6050LL99Z Overview

Power Field-Effect Transistor, 48A I(D), 50V, 0.025ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, D2PAK-3

NDB6050LL99Z Parametric

Parameter Name	Attribute value
Maker	Fairchild
Parts packaging code	D2PAK
package instruction	SMALL OUTLINE, R-PSSO-G2
Contacts	3
Reach Compliance Code	unknown
ECCN code	EAR99
Other features	LOGIC LEVEL COMPATIBLE
Avalanche Energy Efficiency Rating (Eas)	200 mJ
Shell connection	DRAIN
Configuration	SINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage	50 V
Maximum drain current (ID)	48 A
Maximum drain-source on-resistance	0.025 Ω
FET technology	METAL-OXIDE SEMICONDUCTOR
JEDEC-95 code	TO-263AB
JESD-30 code	R-PSSO-G2
Number of components	1
Number of terminals	2
Operating mode	ENHANCEMENT MODE
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	SMALL OUTLINE
Polarity/channel type	N-CHANNEL
Maximum pulsed drain current (IDM)	144 A
Certification status	Not Qualified
surface mount	YES
Terminal form	GULL WING
Terminal location	SINGLE
transistor applications	SWITCHING
Transistor component materials	SILICON

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NDB6050LL99Z Related Products

	NDB6050LL99Z	NDP6050LJ69Z	NDB6050LS62Z
Description	Power Field-Effect Transistor, 48A I(D), 50V, 0.025ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, D2PAK-3	Power Field-Effect Transistor, 48A I(D), 50V, 0.025ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN	Power Field-Effect Transistor, 48A I(D), 50V, 0.025ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, D2PAK-3
Maker	Fairchild	Fairchild	Fairchild
Parts packaging code	D2PAK	TO-220AB	D2PAK
package instruction	SMALL OUTLINE, R-PSSO-G2	FLANGE MOUNT, R-PSFM-T3	SMALL OUTLINE, R-PSSO-G2
Contacts	3	3	3
Reach Compliance Code	unknown	unknown	unknown
ECCN code	EAR99	EAR99	EAR99
Other features	LOGIC LEVEL COMPATIBLE	LOGIC LEVEL COMPATIBLE	LOGIC LEVEL COMPATIBLE
Avalanche Energy Efficiency Rating (Eas)	200 mJ	200 mJ	200 mJ
Configuration	SINGLE WITH BUILT-IN DIODE	SINGLE WITH BUILT-IN DIODE	SINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage	50 V	50 V	50 V
Maximum drain current (ID)	48 A	48 A	48 A
Maximum drain-source on-resistance	0.025 Ω	0.025 Ω	0.025 Ω
FET technology	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR
JEDEC-95 code	TO-263AB	TO-220AB	TO-263AB
JESD-30 code	R-PSSO-G2	R-PSFM-T3	R-PSSO-G2
Number of components	1	1	1
Number of terminals	2	3	2
Operating mode	ENHANCEMENT MODE	ENHANCEMENT MODE	ENHANCEMENT MODE
Package body material	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY
Package shape	RECTANGULAR	RECTANGULAR	RECTANGULAR
Package form	SMALL OUTLINE	FLANGE MOUNT	SMALL OUTLINE
Polarity/channel type	N-CHANNEL	N-CHANNEL	N-CHANNEL
Maximum pulsed drain current (IDM)	144 A	144 A	144 A
Certification status	Not Qualified	Not Qualified	Not Qualified
surface mount	YES	NO	YES
Terminal form	GULL WING	THROUGH-HOLE	GULL WING
Terminal location	SINGLE	SINGLE	SINGLE
transistor applications	SWITCHING	SWITCHING	SWITCHING
Transistor component materials	SILICON	SILICON	SILICON
Shell connection	DRAIN	-	DRAIN

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