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Datasheet> All Categories > storage> storage> BS62LV4006DCP55
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BS62LV4006DCP55

Description
Standard SRAM, 512KX8, 55ns, CMOS, ROHS COMPLIANT PACKAGE
Categorystorage    storage   
File Size398KB，12 Pages
ManufacturerBrilliance
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BS62LV4006DCP55 Overview

Standard SRAM, 512KX8, 55ns, CMOS, ROHS COMPLIANT PACKAGE

BS62LV4006DCP55 Parametric

Parameter NameAttribute value
MakerBrilliance
Parts packaging codeDIE
package instructionDIE,
Reach Compliance Codeunknown
ECCN code3A991.B.2.A
Maximum access time55 ns
JESD-30 codeX-XUUC-N
memory density4194304 bit
Memory IC TypeSTANDARD SRAM
memory width8
Number of functions1
word count524288 words
character code512000
Operating modeASYNCHRONOUS
Maximum operating temperature70 °C
Minimum operating temperature
organize512KX8
Package body materialUNSPECIFIED
encapsulated codeDIE
Package shapeUNSPECIFIED
Package formUNCASED CHIP
Parallel/SerialPARALLEL
Maximum slew rate0.068 mA
Maximum supply voltage (Vsup)5.5 V
Minimum supply voltage (Vsup)3 V
Nominal supply voltage (Vsup)5 V
surface mountYES
technologyCMOS
Temperature levelCOMMERCIAL
Terminal formNO LEAD
Terminal locationUPPER

BS62LV4006DCP55 Preview

Very Low Power CMOS SRAM
512K X 8 bit
Pb-Free and Green package materials are compliant to RoHS
BS62LV4006
FEATURES
Wide V
CC
operation voltage : 2.4V ~ 5.5V
Very low power consumption :
Operation current : 30mA (Max.) at 55ns
V
CC
= 3.0V
2mA (Max.) at 1MHz
O
Standby current : 2/4uA (Max.) at 70/85 C
Operation current : 70mA (Max.) at 55ns
V
CC
= 5.0V
10mA (Max.) at 1MHz
O
Standby current : 10/20uA (Max.) at 70/85 C
High speed access time :
-55
55ns (Max.) at V
CC
=3.0~5.5V
-70
70ns (Max.) at V
CC
=2.7~5.5V
Automatic power down when chip is deselected
Easy expansion with CE and OE options
Three state outputs and TTL compatible
Fully static operation
Data retention supply voltage as low as 1.5V
DESCRIPTION
The BS62LV4006 is a high performance, very low power CMOS
Static Random Access Memory organized as 524,288 by 8 bits and
operates form a wide range of 2.4V to 5.5V supply voltage.
Advanced CMOS technology and circuit techniques provide both
high speed and low power features with maximum CMOS standby
current of 4/20uA at Vcc=3V/5V at 85 C and maximum access time
of 55/70ns.
Easy memory expansion is provided by an active LOW chip enable
(CE), and active LOW output enable (OE) and three-state output
drivers.
The BS62LV4006 has an automatic power down feature, reducing
the power consumption significantly when chip is deselected.
The BS62LV4006 is available in DICE form, JEDEC standard 32 pin
450mil Plastic SOP, 600mil Plastic DIP, 400 mil TSOP II,
8mmx13.4mm STSOP and 8mmx20mm TSOP package.
O
POWER CONSUMPTION
POWER DISSIPATION
PRODUCT
FAMILY
BS62LV4006DC
BS62LV4006EC
BS62LV4006PC
BS62LV4006SC
BS62LV4006STC
BS62LV4006TC
BS62LV4006EI
BS62LV4006PI
BS62LV4006SI
BS62LV4006STI
BS62LV4006TI
OPERATING
TEMPERATURE
STANDBY
(I
CCSB1
, Max)
Operating
(I
CC
, Max)
PKG TYPE
V
CC
=3V
10MHz
f
Max.
V
CC
=5.0V
V
CC
=3.0V
1MHz
V
CC
=5V
10MHz
f
Max.
1MHz
Commercial
O
O
+0 C to +70 C
10uA
2.0uA
9mA
43mA
68mA
1.5mA
18mA
29mA
Industrial
O
O
-40 C to +85 C
20uA
4.0uA
10mA
45mA
70mA
2mA
20mA
30mA
DICE
TSOP II-32
PDIP-32
SOP-32
STSOP-32
TSOP-32
TSOP II-32
PDIP-32
SOP-32
STSOP-32
TSOP-32
PIN CONFIGURATIONS
A11
A9
A8
A13
WE
A17
A15
VCC
A18
A16
A14
A12
A7
A6
A5
A4
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
32
31
30
29
28
27
26
25
24
23
22
21
20
19
18
17
OE
A10
CE
DQ7
DQ6
DQ5
DQ4
DQ3
GND
DQ2
DQ1
DQ0
A0
A1
A2
A3
BLOCK DIAGRAM
A12
A14
A16
A18
A15
A17
A13
A8
A9
A11
•
BS62LV4006TC
BS62LV4006TI
BS62LV4006STC
BS62LV4006STI
Address
Input
Buffer
10
Row
Decoder
1024
Memory Array
1024 x 4096
4096
DQ0
DQ1
DQ2
8
Data
Input
Buffer
8
256
Column Decoder
9
Control
Address Input Buffer
8
Column I/O
Write Driver
Sense Amp
A18
A16
A14
A12
A7
A6
A5
A4
A3
A2
A1
A0
DQ0
DQ1
DQ2
GND
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
•
BS62LV4006EC
BS62LV4006EI
BS62LV4006SC
BS62LV4006SI
BS62LV4006PC
BS62LV4006PI
DQ3
32
31
30
29
28
27
26
25
24
23
22
21
20
19
18
17
VCC
A15
A17
WE
A13
A8
A9
A11
OE
A10
CE
DQ7
DQ6
DQ5
DQ4
DQ3
DQ4
DQ5
DQ6
DQ7
8
Data
Output
Buffer
CE
WE
OE
V
CC
GND
A7 A6 A5 A4 A3 A2 A1 A0 A0
Brilliance Semiconductor, Inc.
reserves the right to change products and specifications without notice.
R0201-BS62LV4006
1
Revision
1.5
Oct.
2008
BS62LV4006
PIN DESCRIPTIONS
Name
A0-A18 Address Input
CE Chip Enable Input
Function
These 19 address inputs select one of the 524,288 x 8-bit in the RAM
CE is active LOW. Chip enable must be active when data read form or write to the
device. If chip enable is not active, the device is deselected and is in standby power
mode. The DQ pins will be in the high impedance state when the device is deselected.
WE Write Enable Input
The write enable input is active LOW and controls read and write operations. With the
chip selected, when WE is HIGH and OE is LOW, output data will be present on the
DQ pins; when WE is LOW, the data present on the DQ pins will be written into the
selected memory location.
OE Output Enable Input
The output enable input is active LOW. If the output enable is active while the chip is
selected and the write enable is inactive, data will be present on the DQ pins and they
will be enabled. The DQ pins will be in the high impendence state when OE is inactive.
DQ0-DQ7 Data Input/Output
Ports
V
CC
GND
There 8 bi-directional ports are used to read data from or write data into the RAM.
Power Supply
Ground
TRUTH TABLE
MODE
Not selected
(Power Down)
Output Disabled
Read
Write
CE
H
L
L
L
WE
X
H
H
L
OE
X
H
L
X
I/O OPERATION
High Z
High Z
D
OUT
D
IN
V
CC
CURRENT
I
CCSB
, I
CCSB1
I
CC
I
CC
I
CC
ABSOLUTE MAXIMUM RATINGS
(1)
SYMBOL
V
TERM
T
BIAS
T
STG
P
T
I
OUT
OPERATING RANGE
UNITS
V
O
PARAMETER
Terminal Voltage with
Respect to GND
Temperature Under
Bias
Storage Temperature
Power Dissipation
DC Output Current
RATING
-0.5
(2)
RANG
Commercial
Industrial
AMBIENT
TEMPERATURE
0 C to + 70 C
-40 C to + 85 C
O
O
O
O
V
CC
2.4V ~ 5.5V
2.4V ~ 5.5V
to 7.0
-40 to +125
-60 to +150
1.0
20
C
C
O
W
mA
CAPACITANCE
(1)
(T
A
= 25
O
C, f = 1.0MHz)
SYMBOL PAMAMETER CONDITIONS MAX. UNITS
C
IN
C
IO
Input
Capacitance
Input/Output
Capacitance
V
IN
= 0V
V
I/O
= 0V
6
8
pF
pF
1. Stresses greater than those listed under ABSOLUTE
MAXIMUM RATINGS may cause permanent damage to the
device. This is a stress rating only and functional operation of
the device at these or any other conditions above those
indicated in the operational sections of this specification is not
implied. Exposure to absolute maximum rating conditions for
extended periods may affect reliability.
2. –2.0V in case of AC pulse width less than 30 ns.
R0201-BS62LV4006
1. This parameter is guaranteed and not 100% tested.
2
Revision
1.5
Oct.
2008
BS62LV4006
DC ELECTRICAL CHARACTERISTICS (T
A
= -40
O
C to +85
O
C)
PARAMETER
NAME
V
CC
V
IL
V
IH
I
IL
I
LO
V
OL
V
OH
I
CC
(5)
I
CC1
I
CCSB
I
CCSB1
(6)
PARAMETER
Power Supply
Input Low Voltage
Input High Voltage
Input Leakage Current
Output Leakage Current
Output Low Voltage
Output High Voltage
Operating Power Supply
Current
Operating Power Supply
Current
Standby Current – TTL
Standby Current – CMOS
O
TEST CONDITIONS
MIN.
2.4
-0.5
(2)
TYP.
(1)
--
--
--
--
--
--
--
--
--
--
0.25
1.5
MAX.
5.5
0.8
V
CC
+0.3
1
1
0.4
--
30
70
2
10
0.5
1.0
4.0
20
(3)
UNITS
V
V
V
UA
UA
V
V
mA
mA
mA
uA
2.2
V
CC
= Max, V
IN
= 0V to V
CC
V
CC
= Max, CE= V
IH
, or OE = V
IH
,
V
I/O
= 0V to V
CC
V
CC
= Max, I
OL
= 2.0mA
V
CC
= Min, I
OH
= -1.0mA
CE = V
IL
,
(4)
I
DQ
= 0mA, f = F
MAX
CE = V
IL
,
I
DQ
= 0mA, f = 1MHz
CE = V
IH
,
I
DQ
= 0mA
CE≧V
CC
-0.2V,
V
IN
≧V
CC
-0.2V or V
IN
≦0.2V
V
CC
=3.0V
V
CC
=5.0V
V
CC
=3.0V
V
CC
=5.0V
V
CC
=3.0V
V
CC
=5.0V
V
CC
=3.0V
V
CC
=5.0V
--
--
--
2.4
--
--
--
--
1. Typical characteristics are at T
A
=25 C and not 100% tested.
2. Undershoot: -1.0V in case of pulse width less than 20 ns.
3. Overshoot: V
CC
+1.0V in case of pulse width less than 20 ns.
4. F
MAX
=1/t
RC.
O
5. I
CC (MAX.)
is 29mA/68mA at V
CC
=3.0V/5.0V and T
A
=70 C.
O
6. I
CCSB1(MAX.)
is 2.0uA/10uA at V
CC
=3.0V/5.0V and T
A
=70 C.
DATA RETENTION CHARACTERISTICS (T
A
= -40
O
C to +85
O
C)
SYMBOL
V
DR
I
CCDR
(3)
t
CDR
t
R
PARAMETER
V
CC
for Data Retention
Data Retention Current
Chip Deselect to Data
Retention Time
Operation Recovery Time
O
TEST CONDITIONS
CE≧V
CC
-0.2V,
V
IN
≧V
CC
-0.2V or V
IN
≦0.2V
CE≧V
CC
-0.2V,
V
IN
≧V
CC
-0.2V or V
IN
≦0.2V
MIN.
1.5
--
0
TYP.
(1)
--
0.1
--
MAX.
--
1.5
--
--
UNITS
V
uA
ns
ns
See Retention Waveform
t
RC
(2)
--
1. V
CC
=1.5V, T
A
=25 C and not 100% tested.
2. t
RC
= Read Cycle Time.
O
3. I
CCRD(Max.)
is 1.0uA at T
A
=70 C.
LOW V
CC
DATA RETENTION WAVEFORM (1) (CE Controlled)
Data Retention Mode
V
CC
V
CC
V
DR
≧1.5V
V
CC
t
CDR
V
IH
CE≧V
CC
- 0.2V
t
R
V
IH
CE
R0201-BS62LV4006
3
Revision
1.5
Oct.
2008
BS62LV4006
AC TEST CONDITIONS
(Test Load and Input/Output Reference)
Input Pulse Levels
Input Rise and Fall Times
Input and Output Timing
Reference Level
Output Load
t
CLZ
, t
OLZ
, t
CHZ
, t
OHZ
, t
WHZ
Others
Vcc / 0V
1V/ns
0.5Vcc
C
L
= 5pF+1TTL
C
L
= 30pF+1TTL
ALL INPUT PULSES
1 TTL
Output
C
(1)
L
KEY TO SWITCHING WAVEFORMS
WAVEFORM
INPUTS
MUST BE
STEADY
MAY CHANGE
FROM “H” TO “L”
MAY CHANGE
FROM “L” TO “H”
DON’T CARE
ANY CHANGE
PERMITTED
DOES NOT
APPLY
OUTPUTS
MUST BE
STEADY
WILL BE CHANGE
FROM “H” TO “L”
WILL BE CHANGE
FROM “L” TO “H”
CHANGE :
STATE UNKNOW
CENTER LINE IS
HIGH INPEDANCE
“OFF” STATE
V
CC
GND
10%
90%
90%
10%
→ ←
Rise Time :
1V/ns
→ ←
Fall Time :
1V/ns
1. Including jig and scope capacitance.
AC ELECTRICAL CHARACTERISTICS (T
A
= -40
O
C to +85
O
C)
READ CYCLE
JEDEC
PARANETER
PARAMETER
NAME
NAME
DESCRIPTION
CYCLE TIME : 55ns
(V
CC
= 3.0~5.5V)
MIN.
Read Cycle Time
Address Access Time
Chip Select Access Time
Output Enable to Output Valid
Chip Select to Output Low Z
Output Enable to Output Low Z
Chip Select to Output High Z
Output Enable to Output High Z
Data Hold from Address Change
55
--
--
--
10
5
--
--
10
TYP.
--
--
--
--
--
--
--
--
--
MAX.
--
55
55
30
--
--
30
25
--
CYCLE TIME : 70ns
(V
CC
= 2.7~5.5V)
MIN.
70
--
--
--
10
5
--
--
10
TYP.
--
--
--
--
--
--
--
--
--
MAX.
--
70
70
35
--
--
35
30
--
ns
ns
ns
ns
ns
ns
ns
ns
ns
UNITS
t
AVAX
t
AVQX
t
E1LQV
t
GLQV
t
E1LQX
t
GLQX
t
E1HQZ
t
GHQZ
t
AVQX
t
RC
t
AA
t
ACS
t
OE
t
CLZ
t
OLZ
t
CHZ
t
OHZ
t
OH
R0201-BS62LV4006
4
Revision
1.5
Oct.
2008
BS62LV4006
SWITCHING WAVEFORMS (READ CYCLE)
READ CYCLE 1
(1,2,4)
t
RC
ADDRESS
t
OH
D
OUT
t
AA
t
OH
READ CYCLE 2
(1,3,4)
CE
t
ACS
D
OUT
t
CLZ
(5)
t
CHZ
(5)
READ CYCLE 3
(1, 4)
t
RC
ADDRESS
t
AA
OE
t
OE
CE
t
CLZ
(5)
D
OUT
t
OLZ
t
ACS
t
OHZ
(5)
t
CHZ
(1,5)
t
OH
NOTES:
1. WE is high in read Cycle.
2. Device is continuously selected when CE = V
IL
.
3. Address valid prior to or coincident with CE transition low.
4. OE = V
IL
.
5. Transition is measured
±
500mV from steady state with C
L
= 5pF.
The parameter is guaranteed but not 100% tested.
R0201-BS62LV4006
5
Revision
1.5
Oct.
2008
More (Only the first 5 pages are displayed. Please Download Datasheet to view the full content.) >

BS62LV4006DCP55 Related Products

BS62LV4006DCP55 BS62LV4006DCG55 BS62LV4006DCG70 BS62LV4006DCP70
Description Standard SRAM, 512KX8, 55ns, CMOS, ROHS COMPLIANT PACKAGE Standard SRAM, 512KX8, 55ns, CMOS, GREEN PACKAGE Standard SRAM, 512KX8, 70ns, CMOS, GREEN PACKAGE Standard SRAM, 512KX8, 70ns, CMOS, ROHS COMPLIANT PACKAGE
Maker Brilliance Brilliance Brilliance Brilliance
Parts packaging code DIE DIE DIE DIE
package instruction DIE, DIE, DIE, DIE,
Reach Compliance Code unknown unknown unknown unknown
ECCN code 3A991.B.2.A 3A991.B.2.A 3A991.B.2.A 3A991.B.2.A
Maximum access time 55 ns 55 ns 70 ns 70 ns
JESD-30 code X-XUUC-N X-XUUC-N X-XUUC-N X-XUUC-N
memory density 4194304 bit 4194304 bit 4194304 bit 4194304 bit
Memory IC Type STANDARD SRAM STANDARD SRAM STANDARD SRAM STANDARD SRAM
memory width 8 8 8 8
Number of functions 1 1 1 1
word count 524288 words 524288 words 524288 words 524288 words
character code 512000 512000 512000 512000
Operating mode ASYNCHRONOUS ASYNCHRONOUS ASYNCHRONOUS ASYNCHRONOUS
Maximum operating temperature 70 °C 70 °C 70 °C 70 °C
organize 512KX8 512KX8 512KX8 512KX8
Package body material UNSPECIFIED UNSPECIFIED UNSPECIFIED UNSPECIFIED
encapsulated code DIE DIE DIE DIE
Package shape UNSPECIFIED UNSPECIFIED UNSPECIFIED UNSPECIFIED
Package form UNCASED CHIP UNCASED CHIP UNCASED CHIP UNCASED CHIP
Parallel/Serial PARALLEL PARALLEL PARALLEL PARALLEL
Maximum slew rate 0.068 mA 0.068 mA 0.068 mA 0.068 mA
Maximum supply voltage (Vsup) 5.5 V 5.5 V 5.5 V 5.5 V
Minimum supply voltage (Vsup) 3 V 3 V 2.7 V 2.7 V
Nominal supply voltage (Vsup) 5 V 5 V 5 V 5 V
surface mount YES YES YES YES
technology CMOS CMOS CMOS CMOS
Temperature level COMMERCIAL COMMERCIAL COMMERCIAL COMMERCIAL
Terminal form NO LEAD NO LEAD NO LEAD NO LEAD
Terminal location UPPER UPPER UPPER UPPER

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