PD -95186
IRG4PC50UPbF
INSULATED GATE BIPOLAR TRANSISTOR
Features
• UltraFast: Optimized for high operating
frequencies 8-40 kHz in hard switching, >200
kHz in resonant mode
• Generation 4 IGBT design provides tighter
parameter distribution and higher efficiency than
Generation 3
• Industry standard TO-247AC package
• Lead-Free
C
UltraFast Speed IGBT
V
CES
= 600V
G
E
V
CE(on) typ.
=
1.65V
@V
GE
= 15V, I
C
= 27A
n-channel
Benefits
• Generation 4 IGBT's offer highest efficiency available
• IGBT's optimized for specified application conditions
• Designed to be a "drop-in" replacement for equivalent
industry-standard Generation 3 IR IGBT's
Absolute Maximum Ratings
Parameter
V
CES
I
C
@ T
C
= 25°C
I
C
@ T
C
= 100°C
I
CM
I
LM
V
GE
E
ARV
P
D
@ T
C
= 25°C
P
D
@ T
C
= 100°C
T
J
T
STG
Collector-to-Emitter Breakdown Voltage
Continuous Collector Current
Continuous Collector Current
Pulsed Collector Current
Q
Clamped Inductive Load Current
R
Gate-to-Emitter Voltage
Reverse Voltage Avalanche Energy
S
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Mounting torque, 6-32 or M3 screw.
TO-247AC
Max.
600
55
27
220
220
± 20
20
200
78
-55 to + 150
300 (0.063 in. (1.6mm from case )
10 lbf•in (1.1N•m)
Units
V
A
V
mJ
W
°C
Thermal Resistance
Parameter
R
θJC
R
θCS
R
θJA
Wt
Junction-to-Case
Case-to-Sink, Flat, Greased Surface
Junction-to-Ambient, typical socket mount
Weight
Typ.
----
0.24
----
6 (0.21)
Max.
0.64
----
40
----
Units
°C/W
g (oz)
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1
04/26/04
IRG4PC50UPbF
Electrical Characteristics @ T
J
= 25°C (unless otherwise specified)
Parameter
Min. Typ.
V
(BR)CES
Collector-to-Emitter Breakdown Voltage
600 ----
Emitter-to-Collector Breakdown Voltage
T
18
----
V
(BR)ECS
∆V
(BR)CES
/∆T
J
Temperature Coeff. of Breakdown Voltage ---- 0.60
---- 1.65
V
CE(ON)
Collector-to-Emitter Saturation Voltage
---- 2.0
---- 1.6
V
GE(th)
Gate Threshold Voltage
3.0 ----
∆V
GE(th)
/∆T
J
Temperature Coeff. of Threshold Voltage
---- -13
g
fe
Forward Transconductance
U
16
24
---- ----
I
CES
Zero Gate Voltage Collector Current
---- ----
---- ----
I
GES
Gate-to-Emitter Leakage Current
---- ----
Max. Units
Conditions
----
V
V
GE
= 0V, I
C
= 250µA
----
V
V
GE
= 0V, I
C
= 1.0A
---- V/°C V
GE
= 0V, I
C
= 1.0mA
2.0
I
C
= 27A
V
GE
= 15V
----
I
C
= 55A
See Fig.2, 5
V
----
I
C
= 27A , T
J
= 150°C
6.0
V
CE
= V
GE
, I
C
= 250µA
---- mV/°C V
CE
= V
GE
, I
C
= 250µA
----
S
V
CE
≥
15V, I
C
= 27A
250
µA V
GE
= 0V, V
CE
= 600V
2.0
V
GE
= 0V, V
CE
= 10V, T
J
= 25°C
5000
V
GE
= 0V, V
CE
= 600V, T
J
= 150°C
±100 nA V
GE
= ±20V
Switching Characteristics @ T
J
= 25°C (unless otherwise specified)
Q
g
Q
ge
Q
gc
t
d(on)
t
r
t
d(off)
t
f
E
on
E
off
E
ts
t
d(on)
t
r
t
d(off)
t
f
E
ts
L
E
C
ies
C
oes
C
res
Notes:
Parameter
Total Gate Charge (turn-on)
Gate - Emitter Charge (turn-on)
Gate - Collector Charge (turn-on)
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Switching Loss
Internal Emitter Inductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Min.
----
----
----
----
----
----
----
----
----
----
----
----
----
----
----
----
----
----
----
Typ.
180
25
61
32
20
170
88
0.12
0.54
0.66
31
23
230
120
1.6
13
4000
250
52
Max. Units
Conditions
270
I
C
= 27A
38
nC
V
CC
= 400V
See Fig. 8
90
V
GE
= 15V
----
----
T
J
= 25°C
ns
260
I
C
= 27A, V
CC
= 480V
130
V
GE
= 15V, R
G
= 5.0Ω
----
Energy losses include "tail"
----
mJ
See Fig. 10, 11, 13, 14
0.9
----
T
J
= 150°C,
----
I
C
= 27A, V
CC
= 480V
ns
----
V
GE
= 15V, R
G
= 5.0Ω
----
Energy losses include "tail"
----
mJ
See Fig. 13, 14
----
nH
Measured 5mm from package
----
V
GE
= 0V
----
pF
V
CC
= 30V
See Fig. 7
----
ƒ = 1.0MHz
Q
Repetitive rating; V
GE
= 20V, pulse width limited by
max. junction temperature. ( See fig. 13b )
R
V
CC
= 80%(V
CES
), V
GE
= 20V, L = 10µH, R
G
= 5.0Ω,
(See fig. 13a)
T
Pulse width
≤
80µs; duty factor
≤
0.1%.
U
Pulse width 5.0µs, single shot.
S
Repetitive rating; pulse width limited by maximum
junction temperature.
2
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IRG4PC50UPbF
80
F o r b o th :
T rian gu la r w a ve:
60
L oad C urre nt (A )
D u t y c yc le: 5 0%
T J = 1 2 5 °C
T s in k = 9 0 °C
G a te d r ive a s sp ec ified
P o w e r D is sip atio n = 40 W
C la m p vo lta g e :
8 0 % o f ra te d
S q u are w a ve :
40
6 0 % o f ra ted
vo ltag e
20
Idea l d io des
0
0.1
1
10
A
100
f, F re qu e nc y (k H z)
Fig. 1
- Typical Load Current vs. Frequency
(For square wave, I=I
RMS
of fundamental; for triangular wave, I=I
PK
)
I
C
, C o lle ctor-to-E m itter Cu rre n t (A )
1000
1000
100
I
C
, C ollec to r-to-Em itte r C u rre nt (A)
100
10
T
J
= 1 5 0 °C
T
J
= 1 5 0°C
T
J
= 2 5 °C
1
10
T
J
= 2 5 °C
0.1
0
1
V
GE
= 15V
2 0 µ s P U L S E W ID T H
A
10
1
4
6
8
V
C C
= 10 V
5 µs P U L S E W IDTH
A
10
12
V
C E
, C o lle c to r-to -E m itte r V o lta g e (V )
V
G E
, G a te -to -E m itte r V o lta g e (V )
Fig. 2
- Typical Output Characteristics
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Fig. 3
- Typical Transfer Characteristics
3
IRG4PC50UPbF
60
50
V
CE
, C olle ctor-to-E m itte r V oltage (V)
V
G E
= 15 V
2.5
M aximum D C Collector Current (A )
V
G E
= 1 5V
8 0 µs P U L S E W ID TH
I
C
= 5 4 A
40
2.0
30
I
C
= 2 7 A
1.5
20
I
C
= 14 A
10
0
25
50
75
100
125
150
1.0
-60
-40
-20
0
20
40
60
80
100 120
A
140 160
T
C
, C ase Tem perature (°C)
T
J
, Ju n c tio n Te m p e ra tu re (°C )
Fig. 4
- Maximum Collector Current vs. Case
Temperature
Fig. 5
- Collector-to-Emitter Voltage vs.
Junction Temperature
1
T h e rm a l R e s p o n se (Z
thJ C
)
D = 0 .5 0
0 .2 0
0 .1
0 .1 0
0 .0 5
0 .0 2
0 .0 1
S IN G L E P U L S E
(T H E R M A L R E S P O N S E )
N ote s :
1 . D u ty f ac t or D = t
1
/t
2
P
D M
t
1
t2
0 .0 1
0 .0 0 0 0 1
2 . P e a k TJ = P D M x Z th J C + T C
0 .0 0 0 1
0 .0 0 1
0 .0 1
0 .1
1
10
t
1
, R e c ta n g u la r P u ls e D ura tio n (s e c )
Fig. 6
- Maximum Effective Transient Thermal Impedance, Junction-to-Case
4
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IRG4PC50UPbF
8000
V
G E
, Gate-to-Emitter Voltage (V)
V
GE
C
ie s
C
re s
C
o es
=
=
=
=
0V ,
f = 1M Hz
C
ge
+ C
gc
, C
ce
SH OR T ED
C
gc
C
ce
+ C
gc
20
V
C E
= 400V
I
C
= 27A
C, Capacitance (pF)
16
6000
C
ie s
12
4000
C
oe s
2000
8
C
res
4
0
1
10
A
100
0
0
40
80
120
160
A
200
V
C E
, C o lle c to r-to -E m itte r V o lta g e (V )
Q
g
, Total Gate Charge (nC)
Fig. 7 -
Typical Capacitance vs.
Collector-to-Emitter Voltage
Fig. 8
- Typical Gate Charge vs.
Gate-to-Emitter Voltage
2.2
2.0
To ta l S w itc h in g L os se s (m J)
V
C C
V
G E
T
J
I
C
= 480V
= 15V
= 25°C
= 27A
10
R
G
= 5 .0
Ω
V
GE
= 15V
V
CC
= 480V
I
C
= 5 4 A
Total Switching Losses (mJ)
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0
10
20
30
40
50
I
C
= 2 7A
1
I
C
= 1 4 A
A
60
0.1
-60
-40
-20
0
20
40
60
80
100
120 140
A
160
R
G
, Gate Resistance (
Ω
)
T
J
, J u n ctio n T e m p e ra tu re (°C )
Fig. 9
- Typical Switching Losses vs. Gate
Resistance
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Fig. 10
- Typical Switching Losses vs.
Junction Temperature
5
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