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MCR3899

Description
SILICON CONTROLLED RECTIFIER,600V V(DRM),11A I(T),TO-208VAR1/4
CategoryAnalog mixed-signal IC    Trigger device   
File Size283KB,4 Pages
ManufacturerNXP
Websitehttps://www.nxp.com
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MCR3899 Overview

SILICON CONTROLLED RECTIFIER,600V V(DRM),11A I(T),TO-208VAR1/4

MCR3899 Parametric

Parameter NameAttribute value
MakerNXP
package instruction,
Reach Compliance Codeunknown
Nominal circuit commutation break time25 µs
Critical rise rate of minimum off-state voltage50 V/us
Maximum DC gate trigger current80 mA
Maximum DC gate trigger voltage3 V
Maximum holding current90 mA
Maximum leakage current4 mA
On-state non-repetitive peak current350 A
Maximum on-state voltage1.8 V
Maximum on-state current11000 A
Maximum operating temperature100 °C
Minimum operating temperature-40 °C
Off-state repetitive peak voltage600 V
surface mountNO
Trigger device typeSCR

MCR3899 Related Products

MCR3899
Description SILICON CONTROLLED RECTIFIER,600V V(DRM),11A I(T),TO-208VAR1/4
Maker NXP
Reach Compliance Code unknown
Nominal circuit commutation break time 25 µs
Critical rise rate of minimum off-state voltage 50 V/us
Maximum DC gate trigger current 80 mA
Maximum DC gate trigger voltage 3 V
Maximum holding current 90 mA
Maximum leakage current 4 mA
On-state non-repetitive peak current 350 A
Maximum on-state voltage 1.8 V
Maximum on-state current 11000 A
Maximum operating temperature 100 °C
Minimum operating temperature -40 °C
Off-state repetitive peak voltage 600 V
surface mount NO
Trigger device type SCR
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