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E30A23VS_15

Description
TACK SILICON DIFFUSED DIODE
File Size352KB,2 Pages
ManufacturerKEC
Websitehttp://www.keccorp.com/
Download Datasheet View All

E30A23VS_15 Overview

TACK SILICON DIFFUSED DIODE

SEMICONDUCTOR
TECHNICAL DATA
ALTERNATOR DIODE FOR AUTOMOTIVE APPLICATION.
E30A23VS, E30A23VR
STACK SILICON DIFFUSED DIODE
A3
A2
FEATURES
・Average
Forward Current : I
O
=30A.
D1
D2
D3
A1
B1
E
F
G
POLARITY
E30A23VS
(+ Type)
E30A23VR
(- Type)
T
C2
H
MAXIMUM RATING (Ta=25℃)
CHARACTERISTIC
Average Forward Current
Peak 1 Cycle Surge Current
Repetitive Peak Reverse
Surge Current
Transient Peak Reverse Voltage
Peak Reverse Voltage
Junction Temperature
Storage Temperature Range
SYMBOL
I
F(AV)
I
FSM
I
RSM
V
RSM
V
RM
T
j
T
stg
RATING
30
300(50Hz)
30
17
17
-40½190
-40½150
UNIT
A
A
A
V
V
DIM
A1
A2
A3
B1
B2
C1
C2
D1
MILLIMETERS
_
10.0 + 0.3
_
13.5 + 0.3
_
24.0 + 0.5
_
8.5 + 0.3
_
10.0 + 0.3
_
2.0 + 0.3
_
5.0 + 0.3
_ 0.3
2.5 +
DIM
D2
D3
E
F
G
H
T
MILLIMETERS
_
5.0 + 0.3
_
4.5 + 0.3
_
1.9 + 0.3
_
9.0 + 0.3
_
1.0 + 0.3
_
4.4 + 0.5
_
0.6 + 0.3
MR
ELECTRICAL CHARACTERISTICS (Ta=25℃)
CHARACTERISTIC
Peak Forward Voltage
Zener Voltage
Repetitive Peak Reverse Current
Transient Thermal Resistance
Reverse Leakage Current
Under High Temperature
Reverse Recovery Time
Temperature Resistance
SYMBOL
V
FM
V
Z
I
RRM
ΔV
F
HIR
t
rr
R
th
TEST CONDITION
I
FM
=100A
I
Z
=10mA
V
R
=V
RM
I
FM
=100A
T
a
=150℃, V
R
=V
RM
I
F
=100mA, -I
R
=100mA,
90% Recovery Point
DC total junction to case
-
-
1.0
MIN.
-
20
-
-
-
-
TYP.
-
23
-
-
-
-
MAX.
1.2
26
10
100
2.5
1.5
UNIT
V
V
μ
A
mV
mA
μ
S
℃/W
2007. 6. 26
Revision No : 1
C1
B2
・Zener
Voltage : 23V(Typ.)
1/2
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