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AT27C040-90PJ

Description
OTP ROM, 512KX8, 90ns, CMOS, PDIP32, 0.600 INCH, PLASTIC, DIP-32
Categorystorage    storage   
File Size341KB,14 Pages
ManufacturerAtmel (Microchip)
Environmental Compliance
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AT27C040-90PJ Overview

OTP ROM, 512KX8, 90ns, CMOS, PDIP32, 0.600 INCH, PLASTIC, DIP-32

AT27C040-90PJ Parametric

Parameter NameAttribute value
Is it lead-free?Lead free
Is it Rohs certified?conform to
MakerAtmel (Microchip)
Parts packaging codeDIP
package instructionDIP,
Contacts32
Reach Compliance Codecompliant
ECCN codeEAR99
Maximum access time90 ns
JESD-30 codeR-PDIP-T32
JESD-609 codee3
length42.037 mm
memory density4194304 bit
Memory IC TypeOTP ROM
memory width8
Humidity sensitivity level1
Number of functions1
Number of terminals32
word count524288 words
character code512000
Operating modeASYNCHRONOUS
Maximum operating temperature85 °C
Minimum operating temperature-40 °C
organize512KX8
Package body materialPLASTIC/EPOXY
encapsulated codeDIP
Package shapeRECTANGULAR
Package formIN-LINE
Parallel/SerialPARALLEL
Peak Reflow Temperature (Celsius)245
Certification statusNot Qualified
Maximum seat height4.826 mm
Maximum supply voltage (Vsup)5.5 V
Minimum supply voltage (Vsup)4.5 V
Nominal supply voltage (Vsup)5 V
surface mountNO
technologyCMOS
Temperature levelINDUSTRIAL
Terminal surfaceMATTE TIN
Terminal formTHROUGH-HOLE
Terminal pitch2.54 mm
Terminal locationDUAL
Maximum time at peak reflow temperatureNOT SPECIFIED
width15.24 mm

AT27C040-90PJ Preview

Features
Fast Read Access Time – 70 ns
Low Power CMOS Operation
– 100 µA Max Standby
– 30 mA Max Active at 5 MHz
JEDEC Standard Packages
– 32-lead PDIP
– 32-lead PLCC
– 32-lead TSOP
5V
±
10% Supply
High Reliability CMOS Technology
– 2000V ESD Protection
– 200 mA Latchup Immunity
Rapid Programming Algorithm – 100 µs/Byte (Typical)
CMOS and TTL Compatible Inputs and Outputs
Industrial Temperature Range
Green (Pb/Halide-free) Packaging Option
4-Megabit
(512K x 8)
OTP EPROM
AT27C040
1. Description
The AT27C040 chip is a low-power, high-performance, 4,194,304-bit one-time pro-
grammable read-only memory (OTP EPROM) organized as 512K by 8 bits. The
AT27C040 requires only one 5V power supply in normal read mode operation. Any
byte can be accessed in less than 70 ns, eliminating the need for speed reducing
WAIT states on high-performance microprocessor systems.
Atmel’s scaled CMOS technology provides low active power consumption, and fast
programming. Power consumption is typically 8 mA in active mode and less than
10
µA
in standby mode.
The AT27C040 is available in a choice of industry-standard JEDEC-approved one-
time programmable (OTP) plastic PDIP, PLCC and TSOP packages. The device fea-
tures two-line control (CE, OE) to eliminate bus contention in high-speed systems.
Atmel’s AT27C040 has additional features to ensure high quality and efficient produc-
tion use. The Rapid Programming Algorithm reduces the time required to program the
part and guarantees reliable programming. Programming time is typically only
100
µs/byte.
The Integrated Product Identification Code electronically identifies the
device and manufacturer. This feature is used by industry-standard programming
equipment to select the proper programming algorithms and voltages.
0189H–EPROM–12/07
2. Pin Configurations
Pin Name
A0 - A18
O0 - O7
CE
OE
Function
Addresses
Outputs
Chip Enable
Output Enable
2.1
32-lead PDIP Top View
VPP
A16
A15
A12
A7
A6
A5
A4
A3
A2
A1
A0
O0
O1
O2
GND
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
32
31
30
29
28
27
26
25
24
23
22
21
20
19
18
17
VCC
A18
A17
A14
A13
A8
A9
A11
OE
A10
CE
07
06
05
04
03
2.3
32-lead PLCC Top View
A12
A15
A16
VPP
VCC
A18
A17
2.2
32-lead TSOP Top View
A11
A9
A8
A13
A14
A17
A18
VCC
VPP
A16
A15
A12
A7
A6
A5
A4
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
32
31
30
29
28
27
26
25
24
23
22
21
20
19
18
17
OE
A10
CE
07
06
05
04
03
GND
02
01
O0
A0
A1
A2
A3
2
AT27C040
0189H–EPROM–12/07
01
02
GND
03
04
05
06
14
15
16
17
18
19
20
A7
A6
A5
A4
A3
A2
A1
A0
O0
5
6
7
8
9
10
11
12
13
4
3
2
1
32
31
30
29
28
27
26
25
24
23
22
21
A14
A13
A8
A9
A11
OE
A10
CE
07
AT27C040
3. Switching Considerations
Switching between active and standby conditions via the Chip Enable pin may produce tran-
sient voltage excursions. Unless accommodated by the system design, these transients may
exceed datasheet limits, resulting in device non-conformance. At a minimum, a 0.1
µF
high
frequency, low inherent inductance, ceramic capacitor should be utilized for each device. This
capacitor should be connected between the V
CC
and Ground terminals of the device, as close
to the device as possible. Additionally, to stabilize the supply voltage level on printed circuit
boards with large EPROM arrays, a 4.7 µF bulk electrolytic capacitor should be utilized, again
connected between the V
CC
and Ground terminals. This capacitor should be positioned as
close as possible to the point where the power supply is connected to the array.
4. Block Diagram
5. Absolute Maximum Ratings*
Temperature Under Bias................................ -55°C to +125°C
Storage Temperature ..................................... -65°C to +150°C
Voltage on Any Pin with
Respect to Ground ............................................-2.0V to +7.0V
Voltage on A9 with
Respect to Ground .........................................-2.0V to +14.0V
V
PP
Supply Voltage with
Respect to Ground ..........................................-2.0V to +14.0V
*NOTICE:
Stresses beyond those listed under “Absolute
Maximum Ratings” may cause permanent dam-
age to the device. This is a stress rating only and
functional operation of the device at these or any
other conditions beyond those indicated in the
operational sections of this specification is not
implied. Exposure to absolute maximum rating
conditions for extended periods may affect
device reliability.
3
0189H–EPROM–12/07
6. Operating Modes
Mode/Pin
Read
Output Disable
Standby
Rapid Program
(2)
PGM Verify
PGM Inhibit
Product Identification
(4)
Notes:
1. X can be V
IL
or V
IH
.
2. Refer to Programming Characteristics
3. V
H
= 12.0 ± 0.5V.
4. Two identifier bytes may be selected. All Ai inputs are held low (V
IL
), except A9 which is set to V
H
and A0 which is toggled
low (V
IL
) to select the Manufacturer’s Identification byte and high (V
IH
) to select the Device Code byte.
CE
V
IL
X
V
IH
V
IL
X
V
IH
V
IL
OE
V
IL
V
IH
X
V
IH
V
IL
V
IH
V
IL
Ai
Ai
X
X
Ai
Ai
X
A9 = V
H(3)
A0 = V
IH
or V
IL
A1 - A18 = V
IL
V
PP
X
(1)
X
X
V
PP
V
PP
V
PP
X
Outputs
D
OUT
High Z
High Z
D
IN
D
OUT
High Z
Identification Code
7. DC and AC Operating Conditions for Read Operation
AT27C040-70
Industrial Operating Temperature (Case)
V
CC
Power Supply
-40°C - 85°C
5V
±
10%
AT27C040-90
-40°C - 85°C
5V
±
10%
8. DC and Operating Characteristics for Read Operation
Symbol
I
LI
I
LO
I
PP1(2)
I
SB
I
CC
V
IL
V
IH
V
OL
V
OH
Notes:
Parameter
Input Load Current
Output Leakage Current
V
PP(1)
Read/Standby Current
V
CC1(1)
Standby Current
V
CC
Active Current
Input Low Voltage
Input High Voltage
Output Low Voltage
Output High Voltage
I
OL
= 2.1 mA
I
OH
= -400 µA
2.4
Condition
V
IN
= 0V to V
CC
V
OUT
= 0V to V
CC
V
PP
= V
CC
I
SB1
(CMOS), CE = V
CC
±
0.3V
I
SB2
(TTL), CE = 2.0 to V
CC
+ 0.5V
f = 5 MHz, I
OUT
= 0 mA, CE = V
IL
-0.6
2.0
Min
Max
±1
±5
10
100
1
30
0.8
V
CC
+ 0.5
0.4
Units
µA
µA
µA
µA
mA
mA
V
V
V
V
1. V
CC
must be applied simultaneously or before V
PP
, and removed simultaneously or after V
PP
.
2. V
PP
may be connected directly to V
CC
, except during programming. The supply current would then be the sum of I
CC
and I
PP
.
4
AT27C040
0189H–EPROM–12/07
AT27C040
9. AC Characteristics for Read Operation
AT27C040
-70
Symbol
t
ACC(1)
t
CE(1)
t
OE(1)
t
DF(1)
t
OH
Note:
Parameter
Address to Output Delay
CE to Output Delay
OE to Output Delay
Condition
CE = OE
= V
IL
OE = V
IL
CE = V
IL
Min
Max
70
70
30
20
0
0
Min
-90
Max
90
90
35
20
Units
ns
ns
ns
ns
ns
OE or CE High to Output Float, Whichever Occurred First
Output Hold from Address, CE or OE, Whichever Occurred
First
1. See AC Waveforms for Read Operation
10. AC Waveforms for Read Operation
(1)
Notes:
1. Timing measurement references are 0.8V and 2.0V. Input AC drive levels are 0.45V and 2.4V, unless otherwise specified.
2. OE may be delayed up to t
CE
- t
OE
after the falling edge of CE without impact on t
CE
.
3. OE may be delayed up to t
ACC
- t
OE
after the address is valid without impact on t
ACC
.
4. This parameter is only sampled and is not 100% tested.
5. Output float is defined as the point when data is no longer driven.
5
0189H–EPROM–12/07

AT27C040-90PJ Related Products

AT27C040-90PJ AT27C040-90TJ AT27C040-70TJ AT27C040-70PJ AT27C040-90JJ AT27C040-70JJ
Description OTP ROM, 512KX8, 90ns, CMOS, PDIP32, 0.600 INCH, PLASTIC, DIP-32 OTP ROM, 512KX8, 90ns, CMOS, PDSO32, 8 X 20 MM, PLASTIC, MO-142BD, TSOP1-32 OTP ROM, 512KX8, 70ns, CMOS, PDSO32, 8 X 20 MM, PLASTIC, MO-142BD, TSOP1-32 OTP ROM, 512KX8, 70ns, CMOS, PDIP32, 0.600 INCH, PLASTIC, DIP-32 OTP ROM, 512KX8, 90ns, CMOS, PQCC32, PLASTIC, MS-016AE, LCC-32 OTP ROM, 512KX8, 70ns, CMOS, PQCC32, PLASTIC, MS-016AE, LCC-32
Is it lead-free? Lead free Lead free Lead free Lead free Lead free Lead free
Is it Rohs certified? conform to conform to conform to conform to conform to conform to
Maker Atmel (Microchip) Atmel (Microchip) Atmel (Microchip) Atmel (Microchip) Atmel (Microchip) Atmel (Microchip)
Parts packaging code DIP TSOP1 TSOP1 DIP QFJ QFJ
package instruction DIP, TSOP1, TSOP1, DIP, QCCJ, QCCJ,
Contacts 32 32 32 32 32 32
Reach Compliance Code compliant compliant compliant compliant compliant compliant
ECCN code EAR99 EAR99 EAR99 EAR99 EAR99 EAR99
Maximum access time 90 ns 90 ns 70 ns 70 ns 90 ns 70 ns
JESD-30 code R-PDIP-T32 R-PDSO-G32 R-PDSO-G32 R-PDIP-T32 R-PQCC-J32 R-PQCC-J32
JESD-609 code e3 e3 e3 e3 e3 e3
length 42.037 mm 18.4 mm 18.4 mm 42.037 mm 13.97 mm 13.97 mm
memory density 4194304 bit 4194304 bit 4194304 bit 4194304 bit 4194304 bit 4194304 bit
Memory IC Type OTP ROM OTP ROM OTP ROM OTP ROM OTP ROM OTP ROM
memory width 8 8 8 8 8 8
Humidity sensitivity level 1 3 3 1 2 2
Number of functions 1 1 1 1 1 1
Number of terminals 32 32 32 32 32 32
word count 524288 words 524288 words 524288 words 524288 words 524288 words 524288 words
character code 512000 512000 512000 512000 512000 512000
Operating mode ASYNCHRONOUS ASYNCHRONOUS ASYNCHRONOUS ASYNCHRONOUS ASYNCHRONOUS ASYNCHRONOUS
Maximum operating temperature 85 °C 85 °C 85 °C 85 °C 85 °C 85 °C
Minimum operating temperature -40 °C -40 °C -40 °C -40 °C -40 °C -40 °C
organize 512KX8 512KX8 512KX8 512KX8 512KX8 512KX8
Package body material PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
encapsulated code DIP TSOP1 TSOP1 DIP QCCJ QCCJ
Package shape RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR
Package form IN-LINE SMALL OUTLINE, THIN PROFILE SMALL OUTLINE, THIN PROFILE IN-LINE CHIP CARRIER CHIP CARRIER
Parallel/Serial PARALLEL PARALLEL PARALLEL PARALLEL PARALLEL PARALLEL
Peak Reflow Temperature (Celsius) 245 260 260 260 245 245
Certification status Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified
Maximum seat height 4.826 mm 1.2 mm 1.2 mm 4.826 mm 3.556 mm 3.556 mm
Maximum supply voltage (Vsup) 5.5 V 5.5 V 5.5 V 5.5 V 5.5 V 5.5 V
Minimum supply voltage (Vsup) 4.5 V 4.5 V 4.5 V 4.5 V 4.5 V 4.5 V
Nominal supply voltage (Vsup) 5 V 5 V 5 V 5 V 5 V 5 V
surface mount NO YES YES NO YES YES
technology CMOS CMOS CMOS CMOS CMOS CMOS
Temperature level INDUSTRIAL INDUSTRIAL INDUSTRIAL INDUSTRIAL INDUSTRIAL INDUSTRIAL
Terminal surface MATTE TIN MATTE TIN MATTE TIN MATTE TIN MATTE TIN MATTE TIN
Terminal form THROUGH-HOLE GULL WING GULL WING THROUGH-HOLE J BEND J BEND
Terminal pitch 2.54 mm 0.5 mm 0.5 mm 2.54 mm 1.27 mm 1.27 mm
Terminal location DUAL DUAL DUAL DUAL QUAD QUAD
Maximum time at peak reflow temperature NOT SPECIFIED 30 30 40 40 40
width 15.24 mm 8 mm 8 mm 15.24 mm 11.43 mm 11.43 mm

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