SEMICONDUCTOR
TECHNICAL DATA
600V/200A
2-PACK IGBT MODULE
(Half - Bridge)
FEATURES
・Trench
IGBT Technology
・Low
V
CE(sat)
・Low
Turn-off loss
・Short
tail current
GM200HB06BL
APPLICATION
・Motor
Controls
・General
purpose inverters
・Servo
Controls
OUTLINE DRAWING
_
13 + 0.3
_
13 + 0.3
_
13 + 0.3
Unit : mm
INTERNAL CIRCUIT
_
28 +0.5
_
31 + 0.5
_
14 + 0.3
_
17 + 0.3
1
2
3
_
25 + 0.3
_
35 +0.5
6
7
5
4
_
23 + 0.3
6
7
1
2
3
5
4
1. C2 /E1
2. E2
3. C1
4. G1
5. E1
6. G2
7. E2
_
23 + 0.3
_ 0.5
80 +
_
93 + 0.5
_
17 + 0.3
_
30 + 0.5
MAXIMUM RATING
(@Tc=25℃ Per Leg, Unless otherwise noted)
CHARACTERISTIC
Collector-to-Emitter Voltage
Gate-Emitter Voltage
Continuous Collector Current
Pulsed Collector Current *
Diode Continuous Forward Current
Isolation Voltage test
Junction Temperature
Storage Temperature
Weight
Mounting Torque (M6)
Terminal Connection torque (M5)
* Half sine wave at 60Hz, peak value.
@T
C
=25℃
@T
C
=80℃
AC @ 1 minute
V
iso
T
j
T
stg
Weight
M
M
@T
C
=25℃
@T
C
=80℃
I
CP
I
F
200
2500
-40 ~ +150
-40 ~ +125
190±5
5
4
V
℃
℃
g
N.m
N.m
SYMBOL
V
CES
V
GES
I
C
200
400
265
A
A
RATING
600
±20
265
A
UNIT
V
V
2013. 9. 02
Revision No : 0
_
22 + 0.5
_
30 + 0.5
_
6 + 0.5
1/2
GM200HB06BL
ELECTRICAL CHARACTERISTICS
(IGBT, @Tc=25℃ Per Leg, Unless otherwise noted)
CHARACTERISTIC
Static
Collector-Emitter Breakdown Voltage
Collector Cut-off Current
Gate Leakage Current
Gate Threshold Voltage
Collector-Emitter Saturation Voltage
Internal Gate Resistance
Dynamic
Turn On Delay Time
Rise Time
Turn Off Delay Time
Fall Time
Turn-On Switching Loss
Turn-Off Switching Loss
Gate Charge
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Short circuit current
t
d(on)
t
r
t
d(off)
t
f
E
ON
E
off
Q
ge
C
ies
C
oes
C
res
I
SC
V
CC
= 300V, V
GE
=15V
t
psc
≤
10
㎲
I
C
= 200A, V
CC
=400V, V
GE
=15V
V
CE
= 30V, V
GE
=0V,
f=1㎒
V
CC
= 300V, I
C
=200A,
R
G
=3.3Ω, V
GE
=±15V,
inductive load
-
-
-
-
-
-
-
-
-
-
-
130
320
120
50
8.5
0.7
380
12.94
0.65
0.34
1100
-
-
-
-
-
mJ
-
-
-
-
-
-
A
nF
nC
ns
BV
CES
I
CES
I
GES
V
GE(th)
V
CE(sat)
R
G
I
C
= 1mA, V
GE
=0V
V
CE
=650V, V
GE
=0V
V
GE
=±20V
V
CE
=V
GE
, I
C
=6.6mA
V
GE
= 15V, I
C
=200A
-
600
-
-600
5.5
-
-
-
-
-
-
1.6
2.0
-
1
600
7.7
2.1
-
V
mA
nA
V
V
Ω
SYMBOL
TEST CONDITION
MIN.
TYP.
MAX.
UNIT
ELECTRICAL CHARACTERISTICS
(DIODE, @Tc=25℃ Per Leg, Unless otherwise noted)
CHARACTERISTIC
Diode Forward Voltage
Diode Reverse Recovery Charge
Diode Peak Reverse Recovery Current
SYMBOL
V
F
Q
rr
I
rr
TEST CONDITION
I
F
= 200A, V
GE
=0V
I
F
=200A, V
R
=300V, di /dt =-900A/㎲
MIN.
-
-
-
TYP.
1.9
2.2
240
MAX.
2..3
-
-
UNIT
V
uQ
A
THERMAL CHARACTERISTIC
CHARACTERISTIC
Junction to Case (IGBT Part, Per 1/2 Module)
Junction to Case (Diode Part, Per 1/2 Module)
SYMBOL
R
th(j-c)
R
th(j-c)
MIN
-
-
TYP
0.3
0.9
MAX.
-
℃/W
-
UNIT
2013. 9. 02
Revision No : 0
2/2
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