StrongIRFET™
IRFB7530PbF
IRFS7530PbF
IRFSL7530PbF
Application
Brushed Motor drive applications
BLDC Motor drive applications
Battery powered circuits
Half-bridge and full-bridge topologies
Synchronous rectifier applications
Resonant mode power supplies
OR-ing and redundant power switches
DC/DC and AC/DC converters
DC/AC Inverters
HEXFET
®
Power MOSFET
D
V
DSS
R
DS(on)
typ.
max
60V
1.65m
2.00m
295A
195A
G
S
I
D (Silicon Limited)
I
D (Package Limited)
D
D
Benefits
Improved Gate, Avalanche and Dynamic dV/dt Ruggedness
Fully Characterized Capacitance and Avalanche SOA
Enhanced body diode dV/dt and dI/dt Capability
Lead-Free, RoHS Compliant
S
D
G
TO-220AB
IRFB7530PbF
S
G
D
2
Pak
IRFS7530PbF
G
S
D
TO-262
IRFSL7530PbF
G
Gate
D
Drain
S
Source
Base part number
IRFB7530PbF
IRFSL7530PbF
IRFS7530PbF
Package Type
TO-220
TO-262
D
2
-Pak
Standard Pack
Form
Quantity
Tube
50
Tube
50
Tube
50
Tape and Reel Left
800
Orderable Part Number
IRFB7530PbF
IRFSL7530PbF
IRFS7530PbF
IRFS7530TRLPbF
)
RDS(on), Drain-to -Source On Resistance (m
7
ID = 100A
6
ID, Drain Current (A)
300
250
200
150
100
50
0
Limited by package
5
4
TJ = 125°C
3
2
1
2
4
6
8
10
12
14
16
18
20
TJ = 25°C
25
50
75
100
125
150
175
VGS, Gate -to -Source Voltage (V)
TC , Case Temperature (°C)
Fig 1.
Typical On-Resistance vs. Gate Voltage
Fig 2.
Maximum Drain Current vs. Case Temperature
1
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Absolute Maximum Rating
IRFB/S/SL7530PbF
Units
A
Parameter
Max.
Continuous Drain Current, V
GS
@ 10V (Silicon Limited)
295
Continuous Drain Current, V
GS
@ 10V (Silicon Limited)
208
Continuous Drain Current, V
GS
@ 10V (Wire Bond Limited)
195
Pulsed Drain Current
760
Maximum Power Dissipation
375
Linear Derating Factor
2.5
V
GS
Gate-to-Source Voltage
± 20
T
J
Operating Junction and
-55 to + 175
T
STG
Storage Temperature Range
Soldering Temperature, for 10 seconds (1.6mm from case)
300
Mounting Torque, 6-32 or M3 Screw
10 lbf·in (1.1 N·m)
Avalanche Characteristics
524
E
AS (Thermally limited)
Single Pulse Avalanche Energy
1025
E
AS (Thermally limited)
Single Pulse Avalanche Energy
I
AR
Avalanche Current
See Fig 15, 16, 23a, 23b
Repetitive Avalanche Energy
E
AR
Thermal Resistance
Symbol
Parameter
Typ.
Max.
Junction-to-Case
R
JC
–––
0.40
Case-to-Sink, Flat Greased Surface
R
CS
0.50
–––
Junction-to-Ambient (TO-220)
R
JA
–––
62
2
Junction-to-Ambient (PCB Mount) (D -Pak)
R
JA
–––
40
Static @ T
J
= 25°C (unless otherwise specified)
Symbol
Parameter
V
(BR)DSS
Drain-to-Source Breakdown Voltage
V
(BR)DSS
/T
J
Breakdown Voltage Temp. Coefficient
R
DS(on)
Static Drain-to-Source On-Resistance
V
GS(th)
I
DSS
I
GSS
R
G
Notes:
Gate Threshold Voltage
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Gate Resistance
Symbol
I
D
@ T
C
= 25°C
I
D
@ T
C
= 100°C
I
D
@ T
C
= 25°C
I
DM
P
D
@T
C
= 25°C
W
W/°C
V
°C
mJ
A
mJ
Units
°C/W
Min.
60
–––
–––
–––
2.1
–––
–––
–––
–––
–––
Typ. Max. Units
Conditions
––– –––
V
V
GS
= 0V, I
D
= 250µA
47
––– mV/°C Reference to 25°C, I
D
= 1mA
1.65 2.00
m V
GS
= 10V, I
D
= 100A
2.10 –––
V
GS
= 6.0V, I
D
= 50A
–––
3.7
V
V
DS
= V
GS
, I
D
= 250µA
–––
1.0
V
DS
=60 V, V
GS
= 0V
µA
––– 150
V
DS
=60V,V
GS
= 0V,T
J
=125°C
––– 100
V
GS
= 20V
nA
––– -100
V
GS
= -20V
2.1
–––
Calculated continuous current based on maximum allowable junction temperature. Bond wire current limit is 195A by
source bonding technology. Note that current limitations arising from heating of the device leads may occur with
some lead mounting arrangements. (Refer to AN-1140)
Repetitive rating; pulse width limited by max. junction temperature.
Limited by T
Jmax
, starting T
J
= 25°C, L = 105µH, R
G
= 50, I
AS
= 100A, V
GS
=10V.
I
SD
100A, di/dt
1338A/µs, V
DD
V
(BR)DSS
, T
J
175°C.
Pulse width
400µs; duty cycle
2%.
C
oss
eff. (TR) is a fixed capacitance that gives the same charging time as C
oss
while V
DS
is rising from 0 to 80% V
DSS
.
C
oss
eff. (ER) is a fixed capacitance that gives the same energy as C
oss
while V
DS
is rising from 0 to 80% V
DSS
.
R
is measured at T
J
approximately 90°C.
When
mounted on 1" square PCB (FR-4 or G-10 Material). For recommended footprint and soldering techniques refer to
application note #AN-994.:
http://www.irf.com/technical-info/appnotes/an-994.pdf
Limited by T
Jmax
, starting T
J
= 25°C, L = 1mH, R
G
= 50, I
AS
= 45A, V
GS
=10V.
2
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IRFB/S/SL7530PbF
Dynamic Electrical Characteristics @ T
J
= 25°C (unless otherwise specified)
Symbol
gfs
Q
g
Q
gs
Q
gd
Q
sync
t
d(on)
t
r
t
d(off)
t
f
C
iss
C
oss
C
rss
C
oss eff.(ER)
C
oss eff.(TR)
Symbol
I
S
I
SM
V
SD
dv/dt
t
rr
Q
rr
I
RRM
Parameter
Forward Transconductance
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain Charge
Total Gate Charge Sync. (Qg– Qgd)
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Effective Output Capacitance
(Energy Related)
Output Capacitance (Time Related)
Parameter
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Diode Forward Voltage
Peak Diode Recovery dv/dt
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
Min.
242
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
Min.
–––
–––
–––
–––
–––
–––
–––
–––
–––
Typ.
–––
274
64
83
191
52
141
172
104
13703
1266
806
1267
1630
Typ.
–––
–––
–––
8.1
51
54
86
102
2.9
Max. Units
Conditions
–––
S V
DS
= 10V, I
D
=100A
411
I
D
= 100A
–––
V
DS
= 30V
nC
–––
V
GS
= 10V
–––
–––
V
DD
= 30V
–––
I
D
= 100A
ns
–––
R
G
= 2.7
V
GS
= 10V
–––
–––
–––
–––
–––
–––
Max. Units
295
A
760
1.2
–––
–––
–––
–––
–––
–––
V
V
GS
= 0V
V
DS
= 25V
ƒ = 1.0MHz, See Fig.7
V
GS
= 0V, VDS = 0V to 48V
V
GS
= 0V, VDS = 0V to 48V
Conditions
MOSFET symbol
showing the
integral reverse
p-n junction diode.
pF
Diode Characteristics
D
G
S
T
J
= 25°C,I
S
= 100A,V
GS
= 0V
V/ns T
J
= 175°C,I
S
=100A,V
DS
= 60V
T
J
= 25°C
V
DD
= 51V
ns
T
J
= 125°C
I
F
= 100A,
T
J
= 25°C di/dt = 100A/µs
nC
T
J
= 125°C
A T
J
= 25°C
3
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November 7, 2014
IRFB/S/SL7530PbF
1000
TOP
VGS
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
4.5V
1000
TOP
VGS
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
4.5V
ID, Drain-to-Source Current (A)
100
BOTTOM
ID, Drain-to-Source Current (A)
BOTTOM
4.5V
10
100
4.5V
60µs
PULSE WIDTH
Tj = 25°C
1
0.1
1
10
100
VDS, Drain-to-Source Voltage (V)
10
0.1
60µs
PULSE WIDTH
Tj = 175°C
1
10
100
VDS, Drain-to-Source Voltage (V)
Fig 3.
Typical Output Characteristics
1000
RDS(on) , Drain-to-Source On Resistance
(Normalized)
Fig 4.
Typical Output Characteristics
2.4
ID = 100A
VGS = 10V
ID, Drain-to-Source Current(A)
100
TJ = 25°C
2.0
10
TJ = 175°C
1.6
1.2
1
VDS = 25V
0.1
2
3
4
5
6
7
60µs
PULSE WIDTH
0.8
0.4
-60
-20
20
60
100
140
180
TJ , Junction Temperature (°C)
VGS, Gate-to-Source Voltage (V)
Fig 5.
Typical Transfer Characteristics
1000000
VGS = 0V,
f = 1 MHZ
Ciss = Cgs + Cgd, Cds SHORTED
Crss = Cgd
Coss = Cds + Cgd
Fig 6.
Normalized On-Resistance vs. Temperature
14.0
VGS, Gate-to-Source Voltage (V)
12.0
10.0
8.0
6.0
4.0
2.0
0.0
ID = 100A
VDS = 48V
VDS = 30V
VDS= 12V
100000
C, Capacitance (pF)
10000
Ciss
Coss
1000
Crss
100
0.1
1
10
100
VDS , Drain-to-Source Voltage (V)
0
50
100
150
200
250
300
350
QG, Total Gate Charge (nC)
Fig 7.
Typical Capacitance vs. Drain-to-Source Voltage
4
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Fig 8.
Typical Gate Charge vs.
Gate-to-Source Voltage
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November 7, 2014
IRFB/S/SL7530PbF
1000
ID, Drain-to-Source Current (A)
1000
100µsec
ISD, Reverse Drain Current (A)
100
TJ = 175°C
100
Limited by
package
10
OPERATION IN THIS AREA
LIMITED BY RDS(on)
10msec
10
TJ = 25°C
1msec
1
VGS = 0V
0.1
0.1
0.4
0.7
1.0
1.3
1.6
1.9
VSD , Source-to-Drain Voltage (V)
1
Tc = 25°C
Tj = 175°C
Single Pulse
0.1
0.1
1
DC
10
VDS , Drain-toSource Voltage (V)
Fig 9.
Typical Source-Drain Diode Forward Voltage
V(BR)DSS, Drain-to-Source Breakdown Voltage (V)
Fig 10.
Maximum Safe Operating Area
2.0
80
Id = 1.0mA
77
1.8
1.6
1.4
74
Energy (µJ)
1.2
1.0
0.8
0.6
71
68
0.4
0.2
65
-60
-20
20
60
100
140
180
TJ , Temperature ( °C )
0.0
0
10
20
30
40
50
60
VDS, Drain-to-Source Voltage (V)
Fig 11.
Drain-to-Source Breakdown Voltage
m
RDS (on), Drain-to -Source On Resistance (
)
Fig 12.
Typical C
oss
Stored Energy
10
9
8
7
6
5
4
3
2
1
0
100
200
300
400
500
ID, Drain Current (A)
VGS = 5.5V
VGS = 6.0V
VGS = 7.0V
VGS = 8.0V
VGS = 10V
Fig 13.
Typical On-Resistance vs. Drain Current
5
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November 7, 2014
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