BZW03-C300/40112 datasheet, PDF

BZW03-C300/40112: DescriptionDIODE 1000 W, UNIDIRECTIONAL, SILICON, TVS DIODE, Transient Suppressor; CategoryDiscrete semiconductor diode; File Size213KB，7 Pages; ManufacturerNXP; Websitehttps://www.nxp.com

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BZW03-C300/40112 Overview

DIODE 1000 W, UNIDIRECTIONAL, SILICON, TVS DIODE, Transient Suppressor

Parameter Name	Attribute value
Maker	NXP
package instruction	O-LALF-W2
Reach Compliance Code	unknown
ECCN code	EAR99
Minimum breakdown voltage	280 V
Shell connection	ISOLATED
Maximum clamping voltage	419 V
Configuration	SINGLE
Diode component materials	SILICON
Diode type	TRANS VOLTAGE SUPPRESSOR DIODE
JESD-30 code	O-LALF-W2
Maximum non-repetitive peak reverse power dissipation	1000 W
Number of components	1
Number of terminals	2
Maximum operating temperature	175 °C
Minimum operating temperature	-65 °C
Package body material	GLASS
Package shape	ROUND
Package form	LONG FORM
polarity	UNIDIRECTIONAL
Maximum power dissipation	1.75 W
Certification status	Not Qualified
Maximum reverse current	10 µA
surface mount	NO
technology	AVALANCHE
Terminal form	WIRE
Terminal location	AXIAL

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The final finishing touches of the program, modifying the parameters can be saved to the EEPROM without pressing SET.. Very anxious: The problem and disadvantage now is that if you modify the parameters without pressing SET, the parameters will not be saved in the EEPROM if the power is suddenly cut off. It needs to be modified so ...; pyy1980 MCU

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