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Datasheet> All Categories > Discrete semiconductor> The transistor> BUD700D
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BUD700D

Description
Power Bipolar Transistor, 2A I(C), 400V V(BR)CEO, 1-Element, NPN, Silicon, TO-251, Plastic/Epoxy, 3 Pin, PLASTIC, TO-251, 3 PIN
CategoryDiscrete semiconductor    The transistor   
File Size165KB，8 Pages
ManufacturerTEMIC
Websitehttp://www.temic.de/
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BUD700D Overview

Power Bipolar Transistor, 2A I(C), 400V V(BR)CEO, 1-Element, NPN, Silicon, TO-251, Plastic/Epoxy, 3 Pin, PLASTIC, TO-251, 3 PIN

BUD700D Parametric

Parameter NameAttribute value
MakerTEMIC
package instructionPLASTIC, TO-251, 3 PIN
Reach Compliance Codeunknown
Shell connectionCOLLECTOR
Maximum collector current (IC)2 A
Collector-emitter maximum voltage400 V
ConfigurationSINGLE WITH BUILT-IN DIODE
Minimum DC current gain (hFE)4
JEDEC-95 codeTO-251
JESD-30 codeR-PSIP-T3
Number of components1
Number of terminals3
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formIN-LINE
Polarity/channel typeNPN
Certification statusNot Qualified
surface mountNO
Terminal formTHROUGH-HOLE
Terminal locationSINGLE
transistor applicationsSWITCHING
Transistor component materialsSILICON
Nominal transition frequency (fT)4 MHz

BUD700D Preview

BUD700D
Silicon NPN High Voltage Switching Transistor
Features
D
D
D
D
D
Monolithic integrated C-E-free-wheel diode
Simple-sWitch-Off Transistor
(SWOT)
HIGH SPEED technology
Planar passivation
100 kHz switching rate
D
D
D
D
D
Very low switching losses
Very low dynamic saturation
Very low operating temperature
Optimized RBSOA
High reverse voltage
Applications
Electronic lamp ballast circuits
2
94 8965
1
1
94 8964
3
2
3
BUD700D
1 Base 2 Collector 3 Emitter
BUD700D –SMD
1 Base 2 Collector 3 Emitter
Absolute Maximum Ratings
T
case
= 25°C, unless otherwise specified
Parameter
Collector-emitter voltage
g
Test Conditions
Symbol
V
CEO
V
CEW
V
CES
V
EBO
I
C
I
CM
I
B
I
BM
P
tot
T
j
T
stg
Value
400
500
700
11
2
3
0.75
1
20
150
–65 to +150
Unit
V
V
V
V
A
A
A
A
W
°
C
°
C
Emitter-base voltage
Collector current
Collector peak current
Base current
Base peak current
Total power dissipation
Junction temperature
Storage temperature range
T
case
≤
50
°
C
TELEFUNKEN Semiconductors
Rev. A1, 18-Jul-97
1 (8)
BUD700D
Maximum Thermal Resistance
T
case
= 25°C, unless otherwise specified
Parameter
Junction case
Test Conditions
Symbol
R
thJC
Value
5
Unit
K/W
Electrical Characteristics
T
case
= 25°C, unless otherwise specified
Parameter
Transistor
Collector cut-off current
Collector-emitter breakdown
voltage (figure 1)
Emitter-base breakdown voltage
Collector-emitter saturation
voltage
Base-emitter saturation voltage
DC forward current transfer ratio
Test Conditions
V
CE
= 700 V
V
CE
= 700 V; T
case
= 150
°
C
I
C
= 300 mA; L = 125 mH;
I
measure
= 100 mA
I
E
= 1 mA
I
C
= 0.3 A; I
B
= 0.1 A
I
C
= 0.3 A; I
B
= 0.1 A
V
CE
= 2 V; I
C
= 10 mA
V
CE
= 2 V; I
C
= 0.3 A
V
CE
= 5 V; I
C
= 2 A
V
S
= 50 V; L = 1 mH; I
C
= 2 A;
I
B1
= 0.7 A; –I
B2
= 0.2 A;
–V
BB
= 5 V
I
C
= 1 A; I
B
= 0.2 A, t = 1
m
s
I
C
= 1 A; I
B
= 0.2 A, t = 3
m
s
I
C
= 200 mA; V
CE
= 10 V;
f = 1 MHz
I
F
= 0.7 A
Symbol
I
CES
I
CES
V
(BR)CEO
V
(BR)EBO
V
CEsat
V
BEsat
h
FE
h
FE
h
FE
V
CEW
400
11
0.1
0.9
10
10
4
500
0.2
1
Min
Typ
Max
50
0.5
Unit
m
A
mA
V
V
V
V
6
V
Collector-emitter working voltage
Dynamic saturation voltage
y
g
Gain bandwidth product
Free-wheel diode
Forward voltage
V
CEsatdyn
V
CEsatdyn
f
T
15
4
4
V
V
MHz
V
F
1.2
V
2 (8)
TELEFUNKEN Semiconductors
Rev. A1, 18-Jul-97
BUD700D
Switching Characteristics
T
case
= 25°C, unless otherwise specified
Parameter
Test Conditions
Resistive load (figure 2)
Turn on time
I
C
= 330 mA; I
B1
= 85 mA;
;
;
–I
B2
= 170 mA; V
S
= 250 V
Storage time
Fall time
Symbol
t
on
t
s
t
f
Min
Typ
Max
0.25
3
0.4
Unit
m
s
m
s
m
s
94 8863
V
S2
+
10 V
I
B
I
C
w
I5
I
measure
I
C
C
V
S1
+
0 to 30 V
V
(BR)CEO
t
p
T
t
p
3 Pulses
+
L
C
V
CE
V
(BR)CEO
+
0.1
+
10 ms
I
(BR)R
100 m
W
Figure 1. Test circuit for V
(BR)CE0
94 8852
I
B
I
B1
0
t
R
C
–I
B2
I
C
(1)
I
B1
R
B
V
BB
+
V
CE
I
B
V
CC
I
C
0.9 I
C
0.1 I
C
t
r
t
d
t
on
t
t
s
t
off
t
f
(1) Fast electronic switch
Figure 2. Test circuit for switching characteristics – resistive load
TELEFUNKEN Semiconductors
Rev. A1, 18-Jul-97
3 (8)
BUD700D
Typical Characteristics
(T
case
= 25
_
C unless otherwise specified)
4
I
C
– Collector Current ( A )
100.00
P
tot
– Total Power Dissipation ( W )
5K/W
10.00
3
0.1 x I
C
< I
B2
< 0.5 x I
C
V
CEsat
< 2 V
2
1.00
12.5K/W
0.10
25K/W
50K/W
R
thJA
=135K/W
0.01
0
25
50
75
100
125
150
1
0
0
13723
100
200
300
400
500
13724
V
CE
– Collector Emitter Voltage ( V )
T
case
– Case Temperature (
°C
)
Figure 3. V
CEW
– Diagram
2.00
1.75
I
C
– Collector Current ( A )
1.50
1.25
1.00
0.75
I
B
=0.05A
0.50
0.25
0
0
13725
Figure 6. P
tot
vs.T
case
V
CEsat
– Collector Emitter Saturation Voltage ( V )
10.00
0.25A
0.2A
0.15A
0.1A
1.00
2A
1A
0.10
I
C
=0.2A
0.01
0.01
0.35A
1
2
3
4
5
6
7
8
9 10 11 12
0.10
1.00
10.00
V
CE
– Collector Emitter Voltage ( V )
13726
I
B
– Base Current ( A )
Figure 4. I
C
vs. V
CE
100
100
Figure 7. V
CEsat
vs. I
B
h
FE
– Forward DC Current Transfer Ratio
h
FE
– Forward DC Current Transfer Ratio
T
j
= 125°C
10
10V
5V
V
CE
=2V
1
0.01
10
75°C
25°C
V
CE
=2V
1
0.01
0.10
1.00
10.00
0.10
1.00
10.00
13728
13727
I
C
– Collector Current ( A )
I
C
– Collector Current ( A )
Figure 5. h
FE
vs. I
C
Figure 8. h
FE
vs. I
C
4 (8)
TELEFUNKEN Semiconductors
Rev. A1, 18-Jul-97
BUD700D
10
8
t
s
– Storage Time (
m
s )
6
4
T
case
= 125°C
2
0.1
T
case
= 25°C
0
0
13729
0.7
saturated switching
R-load
I
C
= 0.35A, I
B1
= 0.04A
0.6
t
f
– Fall Time (
m
s )
0.5
0.4
T
case
= 125°C
0.3
0.2
T
case
= 25°C
0
13730
saturated switching
R-load
I
C
= 0.35A, I
B1
= 0.04A
0
1
2
3
–I
B2
/I
B1
4
5
6
1
2
3
–I
B2
/I
B1
4
5
6
Figure 9. t
s
vs. –I
B2
/I
B1
10
8
t
s
– Storage Time (
m
s )
6
4
T
case
= 125°C
2
T
case
= 25°C
0
0
13731
Figure 12. t
f
vs. –I
B2
/I
B1
0.7
t
f
– Fall Time (
m
s )
saturated switching
R-load
I
C
= 0.35A, I
B1
= 0.085A
0.6
0.5
0.4
0.3
0.2
0.1
0
saturated switching
R-load
I
C
= 0.35A, I
B1
= 0.085A
T
case
= 125°C
T
case
= 25°C
1
2
–I
B2
/I
B1
3
4
13732
0
1
2
–I
B2
/I
B1
3
4
Figure 10. t
s
vs. –I
B2
/I
B1
10.00
I
F
– Forward Current ( A )
Figure 13. t
f
vs. –I
B2
/I
B1
1.00
0.10
0.01
0
13733
0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0
V
F
– Forward Voltage ( V )
Figure 11. I
F
vs. V
F
TELEFUNKEN Semiconductors
Rev. A1, 18-Jul-97
5 (8)
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BUD700D Related Products

BUD700D BUD700D-SMD
Description Power Bipolar Transistor, 2A I(C), 400V V(BR)CEO, 1-Element, NPN, Silicon, TO-251, Plastic/Epoxy, 3 Pin, PLASTIC, TO-251, 3 PIN Power Bipolar Transistor, 2A I(C), 400V V(BR)CEO, 1-Element, NPN, Silicon, TO-252, Plastic/Epoxy, 2 Pin, PLASTIC, TO-252, 3 PIN
Maker TEMIC TEMIC
package instruction PLASTIC, TO-251, 3 PIN PLASTIC, TO-252, 3 PIN
Reach Compliance Code unknown unknown
Shell connection COLLECTOR COLLECTOR
Maximum collector current (IC) 2 A 2 A
Collector-emitter maximum voltage 400 V 400 V
Configuration SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE
Minimum DC current gain (hFE) 4 4
JEDEC-95 code TO-251 TO-252
JESD-30 code R-PSIP-T3 R-PSSO-G2
Number of components 1 1
Number of terminals 3 2
Package body material PLASTIC/EPOXY PLASTIC/EPOXY
Package shape RECTANGULAR RECTANGULAR
Package form IN-LINE SMALL OUTLINE
Polarity/channel type NPN NPN
Certification status Not Qualified Not Qualified
surface mount NO YES
Terminal form THROUGH-HOLE GULL WING
Terminal location SINGLE SINGLE
transistor applications SWITCHING SWITCHING
Transistor component materials SILICON SILICON
Nominal transition frequency (fT) 4 MHz 4 MHz

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