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BUX11N

Description
Power Bipolar Transistor, 20A I(C), 160V V(BR)CEO, 1-Element, NPN, Silicon, TO-3, Metal, 2 Pin,
CategoryDiscrete semiconductor    The transistor   
File Size41KB,1 Pages
ManufacturerCrimson Semiconductor Inc.
Download Datasheet Parametric View All

BUX11N Overview

Power Bipolar Transistor, 20A I(C), 160V V(BR)CEO, 1-Element, NPN, Silicon, TO-3, Metal, 2 Pin,

BUX11N Parametric

Parameter NameAttribute value
MakerCrimson Semiconductor Inc.
Reach Compliance Codeunknown
Other featuresVERY LOW LEAKAGE
Maximum collector current (IC)20 A
Collector-emitter maximum voltage160 V
ConfigurationSINGLE
JEDEC-95 codeTO-3
JESD-30 codeO-MBFM-P2
Number of components1
Number of terminals2
Package body materialMETAL
Package shapeROUND
Package formFLANGE MOUNT
Polarity/channel typeNPN
Maximum power consumption environment150 W
Certification statusNot Qualified
surface mountNO
Terminal formPIN/PEG
Terminal locationBOTTOM
Transistor component materialsSILICON
VCEsat-Max1.5 V
This Material Copyrighted By Its Respective Manufacturer

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Datasheet   0 1 2 3 4 5 6 7 8 9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z
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