V54C3256164VBT datasheet, PDF - EEWORLD Datasheet

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V54C3256164VBT: Description256Mbit SDRAM 3.3 VOLT, TSOP II / SOC BGA / WBGA PACKAGE 16M X 16, 32M X 8, 64M X 4; File Size748KB，52 Pages; ManufacturerMosel Vitelic Corporation ( MVC ); Websitehttp://www.moselvitelic.com

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V54C3256164VBT Overview

256Mbit SDRAM 3.3 VOLT, TSOP II / SOC BGA / WBGA PACKAGE 16M X 16, 32M X 8, 64M X 4

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V54C3256(16/80/40)4V(T/S/B)

256Mbit SDRAM

3.3 VOLT, TSOP II / SOC BGA / WBGA

PACKAGE 16M X 16, 32M X 8, 64M X 4

PRELIMINARY

CILETIV LESO M

System Frequency (f

)

Clock Cycle Time (t

CK3

)

Clock Access Time (t

AC3

) CAS Latency = 3

Clock Access Time (t

AC2

) CAS Latency = 2

166 MHz

6 ns

5.4 ns

7PC

143 MHz

7 ns

5.4 ns

143 MHz

7 ns

5.4 ns

6 ns

8PC

125 MHz

8 ns

6 ns

Features

■

4 banks x 4Mbit x 16 organization

4 banks x 8Mbit x 8 organization

4 banks x16Mbit x 4 organization

High speed data transfer rates up to 166 MHz

Full Synchronous Dynamic RAM, with all signals

referenced to clock rising edge

Single Pulsed RAS Interface

Data Mask for Read/Write Control

Four Banks controlled by BA0 & BA1

Programmable CAS Latency: 2, 3

Programmable Wrap Sequence: Sequential or

Interleave

Programmable Burst Length:

1, 2, 4, 8 for Sequential Type

1, 2, 4, 8 for Interleave Type

Multiple Burst Read with Single Write Operation

Automatic and Controlled Precharge Command

Random Column Address every CLK (1-N Rule)

Power Down Mode

Auto Refresh and Self Refresh

Refresh Interval: 8192 cycles/64 ms

Available in 54 Pin TSOP II, 60 Ball WBGA and

SOC BGA

LVTTL Interface

Single +3.3 V

±0.3

V Power Supply

Description

The V54C3256(16/80/40)4V(T/S/B) is a four

bank Synchronous DRAM organized as 4 banks x

4Mbit x 16, 4 banks x 8Mbit x 8, or 4 banks x 16Mbit

x 4. The V54C3256(16/80/40)4V(T/S/B) achieves

high speed data transfer rates up to 166 MHz by

employing a chip architecture that prefetches multi-

ple bits and then synchronizes the output data to a

system clock

All of the control, address, data input and output

circuits are synchronized with the positive edge of

an externally supplied clock.

Operating the four memory banks in an inter-

leaved fashion allows random access operation to

occur at higher rate than is possible with standard

DRAMs. A sequential and gapless data rate of up to

166 MHz is possible depending on burst length,

CAS latency and speed grade of the device.

■

Device Usage Chart

Operating

Temperature

Range

0°C to 70°C

Package Outline

T/S/B

•

Access Time (ns)

•

Power

8PC

•

7PC

•

Std.

•

Temperature

Mark

Blank

V54C3256(16/80/40)4V(T/S/B) Rev. 1.6 September 2002

V54C3256164VBT Related Products

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Description	256Mbit SDRAM 3.3 VOLT, TSOP II / SOC BGA / WBGA PACKAGE 16M X 16, 32M X 8, 64M X 4	Synchronous DRAM, 16MX16, 5.4ns, CMOS, PDSO54	256Mbit SDRAM 3.3 VOLT, TSOP II / SOC BGA / WBGA PACKAGE 16M X 16, 32M X 8, 64M X 4	256Mbit SDRAM 3.3 VOLT, TSOP II / SOC BGA / WBGA PACKAGE 16M X 16, 32M X 8, 64M X 4	256Mbit SDRAM 3.3 VOLT, TSOP II / SOC BGA / WBGA PACKAGE 16M X 16, 32M X 8, 64M X 4	256Mbit SDRAM 3.3 VOLT, TSOP II / SOC BGA / WBGA PACKAGE 16M X 16, 32M X 8, 64M X 4	256Mbit SDRAM 3.3 VOLT, TSOP II / SOC BGA / WBGA PACKAGE 16M X 16, 32M X 8, 64M X 4	256Mbit SDRAM 3.3 VOLT, TSOP II / SOC BGA / WBGA PACKAGE 16M X 16, 32M X 8, 64M X 4	256Mbit SDRAM 3.3 VOLT, TSOP II / SOC BGA / WBGA PACKAGE 16M X 16, 32M X 8, 64M X 4

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