BC856B datasheet, PDF - EEWORLD Datasheet

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BC856B: Description100 mA, 65 V, PNP, Si, SMALL SIGNAL TRANSISTOR; Categorysemiconductor Discrete semiconductor; File Size77KB，6 Pages; ManufacturerON Semiconductor; Websitehttp://www.onsemi.cn

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BC856B Overview

100 mA, 65 V, PNP, Si, SMALL SIGNAL TRANSISTOR

BC856B Parametric

Parameter Name	Attribute value
Number of terminals	3
Transistor polarity	PNP
Maximum collector current	0.1000 A
Maximum Collector-Emitter Voltage	65 V
Processing package description	SOT-23, 3 PIN
state	TRANSFERRED
packaging shape	Rectangle
Package Size	SMALL OUTLINE
surface mount	Yes
Terminal form	GULL WING
Terminal location	pair
Packaging Materials	Plastic/Epoxy
structure	single
Number of components	1
Transistor component materials	silicon
Maximum ambient power consumption	0.3300 W
Transistor type	Universal small signal
Rated crossover frequency	150 MHz

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BC856B, BC857B, BC858A

General Purpose

Transistors

PNP Silicon

These transistors are designed for general purpose amplifier

applications. They are housed in the SC−70/SOT−323 which is

designed for low power surface mount applications.

Features

www.onsemi.com

COLLECTOR

BASE

EMITTER

•

S and NSV Prefix for Automotive and Other Applications Requiring

Unique Site and Control Change Requirements; AEC−Q101

Qualified and PPAP Capable

•

These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS

Compliant

MAXIMUM RATINGS

= 25°C unless otherwise noted)

Rating

Collector-Emitter Voltage

BC856

BC857

BC858

Collector-Base Voltage

BC856

BC857

BC858

Emitter−Base Voltage

Collector Current − Continuous

EBO

CBO

−80

−50

−30

−5.0

−100

mAdc

Symbol

CEO

−65

−45

−30

Value

Unit

SC−70/SOT−323

CASE 419

STYLE 3

MARKING DIAGRAM

XX M

XX = Specific Device Code

= Date Code*

= Pb−Free Package

(Note: Microdot may be in either location)

*Date Code orientation may vary depending up-

on manufacturing location.

THERMAL CHARACTERISTICS

Characteristic

Total Device Dissipation FR− 5 Board,

(Note 1) T

= 25°C

Thermal Resistance,

Junction−to−Ambient

Junction and Storage Temperature

Symbol

qJA

, T

stg

Max

150

883

−55 to +150

Unit

°C/W

°C

ORDERING INFORMATION

See detailed ordering and shipping information in the package

dimensions section on page 5 of this data sheet.

Stresses exceeding those listed in the Maximum Ratings table may damage the

device. If any of these limits are exceeded, device functionality should not be

assumed, damage may occur and reliability may be affected.

1. FR−5 = 1.0 x 0.75 x 0.062 in.

Semiconductor Components Industries, LLC, 2015

April, 2015 − Rev. 4

Publication Order Number:

BC856BWT1/D

BC856B Related Products

	BC856B	BC858A	BC857B	NSVBC857CWT1G
Description	100 mA, 65 V, PNP, Si, SMALL SIGNAL TRANSISTOR	100 mA, 65 V, PNP, Si, SMALL SIGNAL TRANSISTOR	10 mA, 45 V, PNP, Si, SMALL SIGNAL TRANSISTOR	100 mA, 65 V, PNP, Si, SMALL SIGNAL TRANSISTOR
Number of terminals	3	3	3	3
surface mount	Yes	Yes	Yes	YES
Terminal form	GULL WING	GULL WING	GULL WING	GULL WING
Terminal location	pair	pair	pair	DUAL
Number of components	1	1	1	1
Transistor component materials	silicon	silicon	silicon	SILICON
Transistor polarity	PNP	PNP	PNP	-
Maximum collector current	0.1000 A	0.1000 A	0.0100 A	-
Maximum Collector-Emitter Voltage	65 V	65 V	45 V	-
state	TRANSFERRED	TRANSFERRED	ACTIVE	-
packaging shape	Rectangle	Rectangle	Rectangle	-
Package Size	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE	-
Packaging Materials	Plastic/Epoxy	Plastic/Epoxy	Plastic/Epoxy	-
structure	single	single	single	-
Maximum ambient power consumption	0.3300 W	0.3300 W	0.2000 W	-
Transistor type	Universal small signal	Universal small signal	Universal small signal	-
Rated crossover frequency	150 MHz	150 MHz	250 MHz	-

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