BUJD203A
NPN power transistor with integrated diode
Rev. 02 — 2 December 2010
Product data sheet
1. Product profile
1.1 General description
High voltage, high speed, planar passivated NPN power switching transistor with
integrated anti-parallel E-C diode in a SOT78 (TO220AB) plastic package.
1.2 Features and benefits
Fast switching
High voltage capability
Integrated anti-parallel E-C diode
Very low switching and conduction
losses
1.3 Applications
DC-to-DC converters
Electronic lighting ballasts
Inverters
Motor control systems
1.4 Quick reference data
Table 1.
Symbol
I
C
P
tot
V
CESM
Quick reference data
Parameter
collector current
total power
dissipation
collector-emitter
peak voltage
DC current gain
Conditions
see
Figure 1;
see
Figure 2;
DC;
see
Figure 4
see
Figure 3;
T
mb
≤
25 °C
V
BE
= 0 V
Min
-
-
-
Typ
-
-
-
Max Unit
4
80
850
A
W
V
Static characteristics
h
FE
I
C
= 500 mA; V
CE
= 5 V;
see
Figure 11;
T
j
= 25 °C
V
CE
= 5 V; I
C
= 3 A;
T
mb
= 25 °C; see
Figure 11
V
CEOsus
collector-emitter
I
B
= 0 A; L
C
= 25 mH;
sustaining voltage I
C
= 10 mA; see
Figure 6;
see
Figure 7
13
-
400
21
32
12.5 -
450
-
V
NXP Semiconductors
BUJD203A
NPN power transistor with integrated diode
2. Pinning information
Table 2.
Pin
1
2
3
mb
Pinning information
Symbol Description
B
C
E
C
base
collector
emitter
mounting base; connected to
collector
mb
C
Simplified outline
Graphic symbol
B
E
sym131
1 2 3
SOT78 (TO-220AB)
3. Ordering information
Table 3.
Ordering information
Package
Name
BUJD203A
TO-220AB
Description
plastic single-ended package; heatsink mounted; 1 mounting
hole; 3-lead TO-220AB
Version
SOT78
Type number
BUJD203A
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2010. All rights reserved.
Product data sheet
Rev. 02 — 2 December 2010
2 of 14
NXP Semiconductors
BUJD203A
NPN power transistor with integrated diode
4. Limiting values
Table 4.
Symbol
V
CESM
V
CBO
V
CEO
I
C
I
CM
I
B
I
BM
P
tot
T
stg
T
j
Limiting values
Parameter
collector-emitter peak voltage
collector-base voltage
collector-emitter voltage
collector current
peak collector current
base current
peak base current
total power dissipation
storage temperature
junction temperature
T
mb
≤
25 °C; see
Figure 3
Conditions
V
BE
= 0 V
I
E
= 0 A
I
B
= 0 A
DC; see
Figure 1;
see
Figure 2;
see
Figure 4
see
Figure 1;
see
Figure 2;
see
Figure 4
DC
Min
-
-
-
-
-
-
-
-
-65
-
Max
850
850
425
4
8
2
4
80
150
150
Unit
V
V
V
A
A
A
A
W
°C
°C
In accordance with the Absolute Maximum Rating System (IEC 60134).
10
I
C
(A)
8
001aac000
V
CC
L
C
V
CL(CE)
probe point
6
I
Bon
V
BB
L
B
DUT
001aab999
4
2
0
0
200
400
600
800
1000
V
CEclamp
(V)
Fig 1.
Reverse bias safe operating area
Fig 2.
Test circuit for reverse bias safe operating area
BUJD203A
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2010. All rights reserved.
Product data sheet
Rev. 02 — 2 December 2010
3 of 14
NXP Semiconductors
BUJD203A
NPN power transistor with integrated diode
120
P
der
(%)
80
001aab993
40
0
0
40
80
120
T
mb
(°C)
160
Fig 3.
10
2
I
C
(A)
10
I
CM(max)
I
C(max)
Normalized total power dissipation as a function of mounting base temperature
001aac001
duty cycle = 0.01
II
(3)
(1)
t
p
= 20
μs
50
μs
100
μs
200
μs
500
μs
DC
1
(2)
10
−1
10
−2
I
(3)
III
(3)
10
−3
1
10
10
2
V
CEclamp
(V)
10
3
1) P
tot
maximum and P
tot
peak maximum lines
2) Second breakdown limits
3) I = Region of permissable DC operation
II = Extension for repetitive pulse operation
III = Extension during turn-on in single transistor converters
provided that R
BE
≤
100
Ω
and t
p
≤
0.6
μs
Fig 4.
Forward bias safe operating area for T
mb
≤
25 °C
BUJD203A
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2010. All rights reserved.
Product data sheet
Rev. 02 — 2 December 2010
4 of 14
NXP Semiconductors
BUJD203A
NPN power transistor with integrated diode
5. Thermal characteristics
Table 5.
Symbol
R
th(j-mb)
Thermal characteristics
Parameter
thermal resistance
from junction to
mounting base
thermal resistance
from junction to
ambient
Conditions
see
Figure 5
Min
-
Typ
-
Max
1.56
Unit
K/W
R
th(j-a)
in free air
-
60
-
K/W
10
Z
th(j-mb)
(K/W)
1
δ
= 0.5
0.2
0.1
10
−1
0.05
0.02
0.01
t
p
T
P
tot
001aab998
δ
=
t
p
T
t
10
−2
10
−5
10
−4
10
−3
10
−2
10
−1
1
t
p
(s)
10
Fig 5.
Transient thermal impedance from junction to mounting base as a function of pulse width
BUJD203A
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2010. All rights reserved.
Product data sheet
Rev. 02 — 2 December 2010
5 of 14
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