BAP70-04W
Silicon PIN diode
Rev. 02 — 3 April 2007
Product data sheet
1. Product profile
1.1 General description
Two planar PIN diodes in series configuration in a SOT323 small SMD plastic package.
1.2 Features
I
High voltage current control RF resistor for RF attenuators
I
Low diode capacitance
I
Low series inductance
1.3 Applications
I
RF attenuators and switches
2. Pinning information
Table 1.
Pin
1
2
3
Pinning
Description
anode
cathode
common connection
3
3
Simplified outline
Symbol
2
1
sym015
1
2
sot323_so
3. Ordering information
Table 2.
Ordering information
Package
Name
BAP70-04W
-
Description
plastic surface-mounted package; 3 leads
Version
SOT323
Type number
NXP Semiconductors
BAP70-04W
Silicon PIN diode
4. Marking
Table 3.
Marking codes
Marking code
1Np
Type number
BAP70-04W
5. Limiting values
Table 4.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
Per diode
V
R
I
F
P
tot
T
stg
T
j
continuous reverse voltage
continuous forward current
total power dissipation
storage temperature
junction temperature
T
s
= 90
°C
-
-
-
−65
−65
50
100
260
+150
+150
V
mA
mW
°C
°C
Parameter
Conditions
Min
Max
Unit
6. Thermal characteristics
Table 5.
Symbol
R
th(j-s)
Thermal characteristics
Parameter
thermal resistance from junction to soldering point
Conditions
Typ
230
Unit
K/W
7. Characteristics
Table 6.
Characteristics
T
amb
= 25
°
C unless otherwise specified.
Symbol
Per diode
V
F
I
R
C
d
forward voltage
reverse current
diode capacitance
I
F
= 50 mA
V
R
= 50 V
see
Figure 1;
f = 1 MHz
V
R
= 0 V
V
R
= 1 V
V
R
= 20 V
r
D
diode forward
resistance
see
Figure 2;
f = 100 MHz
I
F
= 0.5 mA
I
F
= 1 mA
I
F
= 10 mA
I
F
= 100 mA
τ
L
L
S
BAP70-04W_2
Parameter
Conditions
Min
-
-
-
-
-
-
-
-
-
-
-
Typ
0.95
-
600
430
250
77
40
5.4
1.4
1.25
1.4
Max
1.1
100
-
-
300
100
50
7
1.9
-
-
Unit
V
nA
fF
fF
fF
Ω
Ω
Ω
Ω
µs
nH
2 of 7
charge carrier life time
series inductance
when switched from I
F
= 10 mA to I
R
= 6 mA;
R
L
= 100
Ω;
measured at I
R
= 3 mA
I
F
= 100 mA; f = 100 MHz
Rev. 02 — 3 April 2007
© NXP B.V. 2007. All rights reserved.
Product data sheet
NXP Semiconductors
BAP70-04W
Silicon PIN diode
600
C
d
(fF)
500
001aaa461
10
3
r
D
(Ω)
mce007
10
2
400
10
300
200
0
5
10
15
V
R
(V)
20
1
10
−1
1
10
I
F
(mA)
10
2
f = 1 MHz; T
j
= 25
°C
f = 100 MHz; T
j
= 25
°C
Fig 1. Diode capacitance as a function of reverse
voltage; typical values
Fig 2. Forward resistance as a function of forward
current; typical values
BAP70-04W_2
© NXP B.V. 2007. All rights reserved.
Product data sheet
Rev. 02 — 3 April 2007
3 of 7
NXP Semiconductors
BAP70-04W
Silicon PIN diode
8. Package outline
Plastic surface-mounted package; 3 leads
SOT323
D
B
E
A
X
y
HE
v
M
A
3
Q
A
A1
c
1
e1
e
bp
2
w
M
B
Lp
detail X
0
1
scale
2 mm
DIMENSIONS (mm are the original dimensions)
UNIT
mm
A
1.1
0.8
A1
max
0.1
bp
0.4
0.3
c
0.25
0.10
D
2.2
1.8
E
1.35
1.15
e
1.3
e1
0.65
HE
2.2
2.0
Lp
0.45
0.15
Q
0.23
0.13
v
0.2
w
0.2
OUTLINE
VERSION
SOT323
REFERENCES
IEC
JEDEC
JEITA
SC-70
EUROPEAN
PROJECTION
ISSUE DATE
04-11-04
06-03-16
Fig 3. Package outline SOT323
BAP70-04W_2
© NXP B.V. 2007. All rights reserved.
Product data sheet
Rev. 02 — 3 April 2007
4 of 7
NXP Semiconductors
BAP70-04W
Silicon PIN diode
9. Revision history
Table 7.
Revision history
Release date
20070403
Data sheet status
Product data sheet
Change notice
-
Supersedes
BAP70-04W_1
Document ID
BAP70-04W_2
Modifications:
•
•
•
The format of this data sheet has been redesigned to comply with the new identity
guidelines of NXP Semiconductors.
Legal texts have been adapted to the new company name where appropriate.
Table 6:
changed max value of reverse current from 20 nA to 100 nA.
Product data
-
BAP70-04W_1
(9397 750 12557)
20040305
BAP70-04W_2
© NXP B.V. 2007. All rights reserved.
Product data sheet
Rev. 02 — 3 April 2007
5 of 7
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