FastIRFET™
IRFH7190PbF
HEXFET
®
Power MOSFET
V
DSS
R
DS(on)
max
(@ V
GS
= 10V)
Q
g (typical)
R
g (typical)
(@T
C (Bottom)
= 25°C)
I
D
100
7.5
26
1.0
82
V
m
nC
A
PQFN 5X6 mm
Applications
Optimized for Secondary Side Synchronous Rectification
Primary Switch for High Frequency 48V/60V Telecom DC-DC Power Supplies
Hot Swap and Active O-Ring
BLDC Motor Drive
Features
Low R
DS(ON)
(< 7.5m)
Internal Snubber
Low Thermal Resistance to PCB (<1.2°C/W)
100% Rg Tested
Low Profile (<1.05 mm)
Industry-Standard Pinout
Compatible with Existing Surface Mount Techniques
RoHS Compliant, Halogen-Free
MSL1
Base part number
IRFH7190PbF
Package Type
PQFN 5mm x 6 mm
Benefits
Lower Conduction Losses
Reduced Vds Spike, Improved EMI
Increased Power Density
Increased Reliability
results in Increased Power Density
Multi-Vendor Compatibility
Easier Manufacturing
Environmentally Friendlier
Increased Reliability
Standard Pack
Form
Quantity
Tape and Reel
4000
Orderable Part Number
IRFH7190TRPbF
Parameter
V
GS
I
D
@ T
A
= 25°C
I
D
@ T
C(Bottom)
= 25°C
I
D
@ T
C(Bottom)
= 100°C
I
DM
P
D
@T
A
= 25°C
P
D
@T
C(Bottom)
= 25°C
T
J
T
STG
Gate-to-Source Voltage
Continuous Drain Current, V
GS
@ 10V
Continuous Drain Current, V
GS
@ 10V
Continuous Drain Current, V
GS
@ 10V
Pulsed Drain Current
Power Dissipation
Power Dissipation
Linear Derating Factor
Operating Junction and
Storage Temperature Range
Max.
± 20
15
82
52
245
3.6
104
0.03
-55 to + 150
W/°C
°C
W
A
Units
V
Absolute Maximum Ratings
Notes
through
are on page 9
1
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January 13, 2015
IRFH7190PbF
Min.
100
–––
–––
2.0
–––
–––
–––
–––
112
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
Typ.
–––
54
6.1
–––
-5.5
–––
–––
–––
–––
26
4.7
1.9
8.3
12
10
80
1.0
4.5
6.1
10.6
3.6
1685
836
16
Max.
–––
–––
7.5
3.6
–––
1.0
100
-100
–––
39
–––
–––
–––
–––
–––
–––
2.0
–––
–––
–––
–––
–––
–––
–––
Units
V
mV/°C
m
V
mV/°C
µA
nA
S
nC
nC
ns
Conditions
V
GS
= 0V, I
D
= 250µA
Reference to 25°C, I
D
= 1mA
V
GS
= 10V, I
D
= 49A
V
DS
= V
GS
, I
D
= 100µA
V
DS
= 80V, V
GS
= 0V
V
GS
= 20V
V
GS
= -20V
V
DS
= 25V, I
D
= 49A
V
DS
= 50V
V
GS
= 10V
I
D
= 49A
Static @ T
J
= 25°C (unless otherwise specified)
Parameter
BV
DSS
Drain-to-Source Breakdown Voltage
BV
DSS
/T
J
Breakdown Voltage Temp. Coefficient
R
DS(on)
Static Drain-to-Source On-Resistance
V
GS(th)
Gate Threshold Voltage
Gate Threshold Voltage Coefficient
V
GS(th)
I
DSS
Drain-to-Source Leakage Current
I
GSS
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
gfs
Forward Transconductance
Q
g
Total Gate Charge
Q
gs1
Pre-Vth Gate-to-Source Charge
Q
gs2
Post-Vth Gate-to-Source Charge
Q
gd
Gate-to-Drain Charge
Q
godr
Gate Charge Overdrive
Q
sw
Switch Charge (Q
gs2
+ Q
gd
)
Q
oss
Output Charge
R
G
Gate Resistance
t
d(on)
Turn-On Delay Time
t
r
Rise Time
t
d(off)
Turn-Off Delay Time
Fall Time
t
f
C
iss
Input Capacitance
C
oss
Output Capacitance
C
rss
Reverse Transfer Capacitance
Diode Characteristics
Parameter
I
S
Continuous Source Current
(Body Diode)
I
SM
Pulsed Source Current
(Body Diode)
V
SD
Diode Forward Voltage
t
rr
Reverse Recovery Time
Q
rr
Reverse Recovery Charge
Avalanche Characteristics
E
AS
I
AR
Parameter
Single Pulse Avalanche Energy
Avalanche Current
V
DS
= 50V, V
GS
= 0V
V
DD
= 50V, V
GS
= 10V
I
D
= 49A
R
G
= 1.0
V
GS
= 0V
pF V
DS
= 50V
ƒ = 1.0MHz
Min.
Typ.
Max. Units
Conditions
MOSFET symbol
–––
–––
82
showing the
A
integral reverse
–––
–––
245
p-n junction diode.
–––
0.8
1.3
V
T
J
= 25°C, I
S
= 49A, V
GS
=0V
–––
49
74
ns T
J
= 25°C, I
F
= 49A, V
DD
= 50V
–––
69
104
nC di/dt = 100A/µs
D
G
S
Typ.
–––
–––
Parameter
Typ.
–––
–––
–––
–––
Max.
269
48
Max.
1.2
22
35
20
Units
mJ
A
Units
°C/W
Thermal Resistance
R
JC
(Bottom) Junction-to-Case
Junction-to-Case
R
JC
(Top)
R
JA
R
JA
(<10s)
Junction-to-Ambient
Junction-to-Ambient
2
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January 13, 2015
1000
TOP
VGS
15V
10V
7.0V
6.5V
6.0V
5.5V
5.0V
4.5V
IRFH7190PbF
1000
TOP
VGS
15V
10V
7.0V
6.5V
6.0V
5.5V
5.0V
4.5V
ID, Drain-to-Source Current (A)
ID, Drain-to-Source Current (A)
100
BOTTOM
100
BOTTOM
4.5V
10
4.5V
10
60µs
PULSE
WIDTH
1
0.1
1
Tj = 25°C
60µs
PULSE WIDTH
Tj = 150°C
1
10
100
0.1
1
10
100
VDS, Drain-to-Source Voltage (V)
VDS, Drain-to-Source Voltage (V)
Fig 1.
Typical Output Characteristics
1000
RDS(on) , Drain-to-Source On Resistance
(Normalized)
Fig 2.
Typical Output Characteristics
2.1
ID = 49A
1.7
VGS = 10V
ID, Drain-to-Source Current(A)
100
TJ = 150°C
10
TJ = 25°C
1
VDS = 50V
0.1
1
2
3
4
5
6
7
1.3
0.9
60µs
PULSE WIDTH
0.5
-60 -40 -20 0
20 40 60 80 100 120 140 160
TJ , Junction Temperature (°C)
VGS, Gate-to-Source Voltage (V)
Fig 3.
Typical Transfer Characteristics
100000
VGS = 0V,
f = 1 MHZ
Ciss = Cgs + Cgd, Cds SHORTED
Crss = Cgd
Coss = Cds + Cgd
Fig 4.
Normalized On-Resistance vs. Temperature
14
VGS, Gate-to-Source Voltage (V)
12
10
8
6
4
2
0
ID= 49A
VDS = 80V
VDS = 50V
VDS= 20V
10000
C, Capacitance (pF)
1000
Ciss
Coss
Crss
100
10
1
10
VDS , Drain-to-Source Voltage (V)
100
0
5
10
15
20
25
30
35
40
QG, Total Gate Charge (nC)
Fig 5.
Typical Capacitance vs. Drain-to-Source Voltage
3
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Fig 6.
Typical Gate Charge vs. Gate-to-Source Voltage
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January 13, 2015
1000
IRFH7190PbF
OPERATION IN THIS AREA
LIMITED BY RDS(on)
ID, Drain-to-Source Current (A)
ISD, Reverse Drain Current (A)
100
100µsec
100
TJ = 150°C
10
1msec
1
10msec
DC
0.1
Tc = 25°C
Tj = 150°C
Single Pulse
0.1
1
10
100
10
TJ = 25°C
VGS = 0V
1.0
0.2
0.4
0.6
0.8
1.0
1.2
VSD , Source-to-Drain Voltage (V)
0.01
VDS , Drain-to-Source Voltage (V)
Fig 7.
Typical Source-Drain Diode Forward Voltage
90
VGS(th), Gate threshold Voltage (V)
Fig 8.
Maximum Safe Operating Area
4.0
3.5
3.0
2.5
2.0
1.5
1.0
ID = 100µA
ID = 250µA
ID = 1.0mA
ID = 1.0A
80
70
ID, Drain Current (A)
60
50
40
30
20
10
0
25
50
75
100
125
150
TC , Case Temperature (°C)
-75 -50 -25
0
25
50
75 100 125 150
TJ , Temperature ( °C )
Fig 9.
Maximum Drain Current vs. Case Temperature
10
Thermal Response ( Z thJC ) °C/W
Fig 10.
Threshold Voltage vs. Temperature
1
0.1
D = 0.50
0.20
0.10
0.05
0.02
0.01
0.01
0.001
SINGLE PULSE
( THERMAL RESPONSE )
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
0.001
0.01
0.1
1
10
0.0001
1E-006
1E-005
0.0001
t1 , Rectangular Pulse Duration (sec)
Fig 11.
Maximum Effective Transient Thermal Impedance, Junction-to-Case
4
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January 13, 2015
1000
IRFH7190PbF
Allowed avalanche Current vs avalanche
pulsewidth, tav, assuming
Tj = 125°C and
Tstart =25°C (Single Pulse)
Avalanche Current (A)
100
10
1
Allowed avalanche Current vs avalanche
pulsewidth, tav, assuming
j = 25°C and
Tstart = 125°C.
0.1
1.0E-06
1.0E-05
1.0E-04
tav (sec)
1.0E-03
1.0E-02
Fig 12.
Typical Avalanche Current vs. Pulse Width
1200
EAS , Single Pulse Avalanche Energy (mJ)
RDS(on), Drain-to -Source On Resistance (m )
23
ID = 49A
1100
1000
900
800
700
600
500
400
300
200
100
0
25
50
75
20
17
14
TJ = 125°C
ID
TOP
3A
5A
BOTTOM 48A
11
8
5
2
4
6
8
10
12
14
16
18
20
TJ = 25°C
100
125
150
VGS, Gate -to -Source Voltage (V)
Starting TJ , Junction Temperature (°C)
Fig 13.
On–Resistance vs. Gate Voltage
Fig 14.
Maximum Avalanche Energy vs. Drain Current
5
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January 13, 2015
Embedded System
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