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KDV258E_15

Description
SILICON EPITAXIAL PLANAR DIODE
File Size344KB,2 Pages
ManufacturerKEC
Websitehttp://www.keccorp.com/
Download Datasheet View All

KDV258E_15 Overview

SILICON EPITAXIAL PLANAR DIODE

SEMICONDUCTOR
TECHNICAL DATA
VCO FOR UHF/VHF BAND.
FEATURES
・High
Capacitance Ratio : C
1V
/C
4V
=2.0(Min.)
・Low
Series Resistance : r
s
=0.45Ω(Max.)
CATHODE MARK
C
1
KDV258E
VARIABLE CAPACITANCE DIODE
SILICON EPITAXIAL PLANAR DIODE
E
2
MAXIMUM RATING (Ta=25℃)
CHARACTERISTIC
Reverse Voltage
Junction Temperature
Storage Temperature Range
SYMBOL
V
R
T
j
T
stg
RATING
15
150
-55½150
UNIT
V
D
F
B
A
1. ANODE
2. CATHODE
DIM
A
B
C
D
E
F
MILLIMETERS
_
1.60 + 0.10
_
1.20 + 0.10
_ 0.10
0.80 +
_
0.30 + 0.05
_
+ 0.10
0.60
_
0.13 + 0.05
ESC
ELECTRICAL CHARACTERISTICS (Ta=25℃)
CHARACTERISTIC
Reverse Voltage
Reverse Current
Capacitance
C
4V
Capacitance Ratio
Series Resistance
K
r
S
V
R
=4V, f=1MHz
-
V
R
=1V, f=470MHz
8.5
2.0
-
-
-
-
10.0
-
0.45
SYMBOL
V
R
I
R
C
1V
I
R
=1μ
A
V
R
=10V
V
R
=1V, f=1MHz
TEST CONDITION
MIN.
15
-
19.0
TYP.
-
-
-
MAX.
-
10
21.0
pF
UNIT
V
nA
Marking
Type Name
U6
2003. 3. 25
Revision No : 0
1/2
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