MJE243G (NPN),
MJE253G (PNP)
Complementary Silicon
Power Plastic Transistors
These devices are designed for low power audio amplifier and
low−current, high−speed switching applications.
Features
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•
•
•
•
•
•
High Collector−Emitter Sustaining Voltage
High DC Current Gain
Low Collector−Emitter Saturation Voltage
High Current Gain Bandwidth Product
Annular Construction for Low Leakages
These Devices are Pb−Free and are RoHS Compliant*
4.0 AMPERES
POWER TRANSISTORS
COMPLEMENTARY SILICON
100 VOLTS, 15 WATTS
PNP
COLLECTOR 2, 4
NPN
COLLECTOR 2, 4
MAXIMUM RATINGS
Rating
Collector−Emitter Voltage
Collector−Base Voltage
Emitter−Base Voltage
Collector Current − Continuous
Collector Current − Peak
Base Current
Total Power Dissipation
@ T
C
= 25_C
Derate above 25_C
Total Power Dissipation
@ T
A
= 25_C
Derate above 25_C
Operating and Storage Junction
Temperature Range
Symbol
V
CEO
V
CB
V
EB
I
C
I
CM
I
B
P
D
15
120
P
D
1.5
12
T
J
, T
stg
–65 to +150
W
mW/_C
_C
W
mW/_C
Value
100
100
7.0
4.0
8.0
1.0
Unit
Vdc
Vdc
Vdc
Adc
Adc
Adc
3
BASE
EMITTER 1
3
BASE
EMITTER 1
TO−225
CASE 77−09
STYLE 1
1 2
3
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
MARKING DIAGRAM
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction−to−Case
Thermal Resistance, Junction−to−Ambient
Symbol
R
qJC
R
qJA
Max
8.34
83.4
Unit
_C/W
_C/W
YWW
JE2x3G
Y
= Year
WW
= Work Week
JE2x3 = Device Code
x = 4 or 5
G
= Pb−Free Package
ORDERING INFORMATION
Device
MJE243G
Package
TO−225
(Pb−Free)
TO−225
(Pb−Free)
Shipping
500 Units/Box
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
©
Semiconductor Components Industries, LLC, 2014
MJE253G
500 Units/Box
1
July, 2014 − Rev. 16
Publication Order Number:
MJE243/D
MJE243G (NPN), MJE253G (PNP)
ELECTRICAL CHARACTERISTICS
(T
C
= 25_C unless otherwise noted)
Characteristic
OFF CHARACTERISTICS
Collector−Emitter Sustaining Voltage
(I
C
= 10 mAdc, I
B
= 0)
Collector Cutoff Current
(V
CB
= 100 Vdc, I
E
= 0)
(V
CE
= 100 Vdc, I
E
= 0, T
C
= 125_C)
Emitter Cutoff Current
(V
BE
= 7.0 Vdc, I
C
= 0)
ON CHARACTERISTICS
DC Current Gain
(I
C
= 200 mAdc, V
CE
= 1.0 Vdc)
(I
C
= 1.0 Adc, V
CE
= 1.0 Vdc)
Collector−Emitter Saturation Voltage
(I
C
= 500 mAdc, I
B
= 50 mAdc)
(I
C
= 1.0 Adc, I
B
= 100 mAdc)
Base−Emitter Saturation Voltage
(I
C
= 2.0 Adc, I
B
= 200 mAdc)
Base−Emitter On Voltage
(I
C
= 500 mAdc, V
CE
= 1.0 Vdc)
DYNAMIC CHARACTERISTICS
Current−Gain − Bandwidth Product
(I
C
= 100 mAdc, V
CE
= 10 Vdc, f
test
= 10 MHz)
Output Capacitance
(V
CB
= 10 Vdc, I
E
= 0, f = 0.1 MHz)
f
T
40
C
ob
−
50
−
pF
MHz
h
FE
40
15
V
CE(sat)
−
−
V
BE(sat)
−
V
BE(on)
−
1.5
1.8
V
0.3
0.6
V
180
−
V
−
V
CEO(sus)
100
I
CBO
−
−
I
EBO
−
0.1
0.1
0.1
−
mA
mA
mAdc
V
Symbol
Min
Max
Unit
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
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2
MJE243G (NPN), MJE253G (PNP)
16
TC
PD, POWER DISSIPATION (WATTS)
1.6
TA
PD, POWER DISSIPATION (WATTS)
12
1.2
8.0
0.8
4.0
0.4
0
20
40
60
80
100
120
140
0
160
T, TEMPERATURE (°C)
Figure 1. Power Derating
V
CC
+ 30 V
R
C
R
B
D
1
-4 V
SCOPE
t, TIME (ns)
1K
500
300
200
100
50
30
20
10
5
3
2
1
0.01
NPN MJE243
PNP MJE253
t
d
V
CC
= 30 V
I
C
/I
B
= 10
T
J
= 25°C
t
r
25
ms
+11 V
0
- 9.0 V
t
r
, t
f
≤
10 ns
DUTY CYCLE = 1.0%
51
R
B
and R
C
VARIED TO OBTAIN DESIRED CURRENT LEVELS
D
1
MUST BE FAST RECOVERY TYPE, e.g.:
1N5825 USED ABOVE I
B
≈
100 mA
MSD6100 USED BELOW I
B
≈
100 mA
FOR PNP TEST CIRCUIT, REVERSE ALL POLARITIES
0.02 0.03 0.05 0.1
1
2
0.2 0.3 0.5
I
C
, COLLECTOR CURRENT (AMPS)
3
5
10
Figure 2. Switching Time Test Circuit
Figure 3. Turn−On Time
r(t), TRANSIENT THERMAL RESISTANCE
(NORMALIZED)
1.0
0.7
0.5
0.3
0.2
0.1
0.07
0.05
0.03
0.02
0.01
0.02
D = 0.5
0.2
0.1
0.05
0.02
0.01
0 (SINGLE PULSE)
q
JC
(t) = r(t)
q
JC
q
JC
= 8.34°C/W MAX
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT t
1
T
J(pk)
- T
C
= P
(pk)
q
JC
(t)
P
(pk)
t
1
t
2
DUTY CYCLE, D = t
1
/t
2
20
50
100
200
0.05
0.1
0.2
0.5
1.0
2.0
t, TIME (ms)
5.0
10
Figure 4. Thermal Response
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MJE243G (NPN), MJE253G (PNP)
10
5.0
IC, COLLECTOR CURRENT (AMP)
2.0
1.0
0.5
0.2
0.1
1.0 ms
dc
T
J
= 150°C
BONDING WIRE LIMITED
THERMALLY LIMITED @
T
C
= 25°C (SINGLE PULSE)
SECOND BREAKDOWN LIMITED
CURVES APPLY BELOW
RATED V
CEO
100
ms
500
ms
5.0 ms
0.05
0.02
0.01
1.0
MJE243/MJE253
50 70 100
2.0 3.0
5.0 7.0 10
20 30
V
CE
, COLLECTOR-EMITTER VOLTAGE (VOLTS)
There are two limitations on the power handling ability of
a transistor: average junction temperature and second
breakdown. Safe operating area curves indicate I
C
− V
CE
limits of the transistor that must be observed for reliable
operation; i.e., the transistor must not be subjected to greater
dissipation than the curves indicate.
The data of Figure 5 is based on T
J(pk)
= 150_C; T
C
is
variable depending on conditions. Second breakdown pulse
limits are valid for duty cycles to 10% provided T
J(pk)
≤
150_C. T
J(pk)
may be calculated from the data in Figure 4.
At high case temperatures, thermal limitations will reduce
the power that can be handled to values less than the
limitations imposed by second breakdown.
Figure 5. Active Region Safe Operating Area
10K
5K
3K
2K
1K
t, TIME (ns)
500
300
200
100
50
30
20
10
0.01
t
s
V
CC
= 30 V
I
C
/I
B
= 10
I
B1
= I
B2
T
J
= 25°C
200
T
J
= 25°C
100
C, CAPACITANCE (pF)
70
50
30
20
t
f
NPN MJE243
PNP MJE253
3
5
10
10
1.0
2.0
MJE243 (NPN)
MJE253 (PNP)
3.0
5.0 7.0 10
20 30
V
R
, REVERSE VOLTAGE (VOLTS)
50 70 100
C
ob
C
ib
0.2 0.3 0.5
1
2
0.02 0.03 0.05 0.1
I
C
, COLLECTOR CURRENT (AMPS)
Figure 6. Turn−Off Time
Figure 7. Capacitance
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4
MJE243G (NPN), MJE253G (PNP)
NPN
MJE243
500
300
200
hFE, DC CURRENT GAIN
100
70
50
30
20
10
7.0
5.0
0.04 0.06
T
J
= 150°C
25°C
- 55°C
V
CE
= 1.0 V
V
CE
= 2.0 V
hFE, DC CURRENT GAIN
200
100
70
50
30
20
10
7.0
5.0
3.0
2.0
0.04 0.06
T
J
= 150°C
25°C
- 55°C
V
CE
= 1.0 V
V
CE
= 2.0 V
PNP
MJE253
0.1
1.0
0.2
0.4 0.6
I
C
, COLLECTOR CURRENT (AMP)
2.0
4.0
0.1
0.2
0.4 0.6
1.0
I
C
, COLLECTOR CURRENT (AMP)
2.0
4.0
Figure 8. DC Current Gain
1.4
T
J
= 25°C
1.2
V, VOLTAGE (VOLTS)
V, VOLTAGE (VOLTS)
1.0
0.8
0.6
0.4
0.2
V
CE(sat)
0
0.04 0.06
0.1
0.2
0.4 0.6
1.0
2.0
4.0
V
BE(sat)
@ I
C
/I
B
= 10
V
BE
@ V
CE
= 1.0 V
I
C
/I
B
= 10
5.0
1.4
T
J
= 25°C
1.2
1.0
V
BE(sat)
@ I
C
/I
B
= 10
0.8
0.6
0.4
0.2
V
CE(sat)
0
0.04 0.06
0.1
0.2
0.4
0.6
1.0
2.0
4.0
V
BE
@ V
CE
= 1.0 V
I
C
/I
B
= 10
5.0
I
C
, COLLECTOR CURRENT (AMP)
I
C
, COLLECTOR CURRENT (AMP)
Figure 9. “On” Voltages
θ
V, TEMPERATURE COEFFICIENTS (mV/
°
C)
+ 2.0
+ 1.5
+ 1.0
+ 0.5
0
- 0.5
- 1.0
- 1.5
- 2.0
*APPLIES FOR I
C
/I
B
≤
h
FE/3
θ
V, TEMPERATURE COEFFICIENTS (mV/
°
C)
+ 2.5
+ 2.5
+ 2.0
+ 1.5
+ 1.0
+ 0.5
0
- 0.5
- 1.0
- 1.5
- 2.0
- 2.5
0.04 0.06
0.1
0.2
0.4
q
VB
FOR V
BE
- 55°C to 25°C
25°C to 150°C
- 55°C to 25°C
0.6
1.0
2.0
4.0
*q
VC
FOR V
CE(sat)
25°C to 150°C
*APPLIES FOR I
C
/I
B
≤
h
FE/3
*q
VC
FOR V
CE(sat)
25°C to 150°C
- 55°C to 25°C
25°C to 150°C
q
VB
FOR V
BE
0.1
- 55°C to 25°C
- 2.5
0.04 0.06
0.2
0.4 0.6
1.0
I
C
, COLLECTOR CURRENT (AMP)
2.0
4.0
I
C
, COLLECTOR CURRENT (AMP)
Figure 10. Temperature Coefficients
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