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NSVDTC144EM3T5G

Description
SMALL SIGNAL TRANSISTOR
CategoryDiscrete semiconductor    The transistor   
File Size111KB,12 Pages
ManufacturerON Semiconductor
Websitehttp://www.onsemi.cn
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NSVDTC144EM3T5G Overview

SMALL SIGNAL TRANSISTOR

NSVDTC144EM3T5G Parametric

Parameter NameAttribute value
Brand NameON Semiconduc
Is it lead-free?Lead free
MakerON Semiconductor
package instructionSMALL OUTLINE, R-PDSO-F3
Manufacturer packaging code631AA
Reach Compliance Codecompli
Factory Lead Time8 weeks
Other featuresBUILIT-IN BIAS RESISTOR
Maximum collector current (IC)0.1 A
Collector-emitter maximum voltage50 V
ConfigurationSINGLE WITH BUILT-IN RESISTOR
Minimum DC current gain (hFE)80
JESD-30 codeR-PDSO-F3
JESD-609 codee3
Humidity sensitivity level1
Number of components1
Number of terminals3
Maximum operating temperature150 °C
Minimum operating temperature-55 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Polarity/channel typeNPN
Maximum power dissipation(Abs)0.6 W
GuidelineAEC-Q101
surface mountYES
Terminal surfaceTin (Sn)
Terminal formFLAT
Terminal locationDUAL
transistor applicationsSWITCHING
Transistor component materialsSILICON
VCEsat-Max0.25 V
MUN2213, MMUN2213L,
MUN5213, DTC144EE,
DTC144EM3, NSBC144EF3
Digital Transistors (BRT)
R1 = 47 kW, R2 = 47 kW
NPN Transistors with Monolithic Bias
Resistor Network
This series of digital transistors is designed to replace a single
device and its external resistor bias network. The Bias Resistor
Transistor (BRT) contains a single transistor with a monolithic bias
network consisting of two resistors; a series base resistor and a base−
emitter resistor. The BRT eliminates these individual components by
integrating them into a single device. The use of a BRT can reduce
both system cost and board space.
Features
PIN 1
BASE
(INPUT)
www.onsemi.com
PIN CONNECTIONS
PIN 3
COLLECTOR
(OUTPUT)
R1
R2
PIN 2
EMITTER
(GROUND)
MARKING DIAGRAMS
SC−59
CASE 318D
STYLE 1
Simplifies Circuit Design
Reduces Board Space
Reduces Component Count
S and NSV Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AEC-Q101 Qualified
and PPAP Capable
These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
MAXIMUM RATINGS
(T
A
= 25°C)
Rating
Collector−Base Voltage
Collector−Emitter Voltage
Collector Current − Continuous
Input Forward Voltage
Input Reverse Voltage
Symbol
V
CBO
V
CEO
I
C
V
IN(fwd)
V
IN(rev)
Max
50
50
100
40
10
Unit
Vdc
Vdc
mAdc
Vdc
Vdc
XX MG
G
1
XXX MG
G
1
SOT−23
CASE 318
STYLE 6
XX MG
G
1
XX M
1
XX M
1
XM 1
XXX
M
G
SC−70/SOT−323
CASE 419
STYLE 3
SC−75
CASE 463
STYLE 1
SOT−723
CASE 631AA
STYLE 1
SOT−1123
CASE 524AA
STYLE 1
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
= Specific Device Code
= Date Code*
= Pb−Free Package
(Note: Microdot may be in either location)
*Date Code orientation may vary depending up-
on manufacturing location.
ORDERING INFORMATION
See detailed ordering, marking, and shipping information in
the package dimensions section on page 2 of this data sheet.
©
Semiconductor Components Industries, LLC, 2015
1
March, 2015 − Rev. 3
Publication Order Number:
DTC144E/D

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Description SMALL SIGNAL TRANSISTOR SMALL SIGNAL TRANSISTOR SMALL SIGNAL TRANSISTOR SMALL SIGNAL TRANSISTOR SMALL SIGNAL TRANSISTOR SMALL SIGNAL TRANSISTOR
Lead-free - Yes Yes Yes Yes Yes
EU RoHS regulations - Yes Yes Yes Yes Yes
China RoHS regulations - Yes Yes Yes Yes Yes
state - ACTIVE ACTIVE ACTIVE ACTIVE ACTIVE
terminal coating - MATTE Tin MATTE Tin MATTE Tin MATTE Tin MATTE Tin
Transistor type - Universal small signal Universal small signal Universal small signal Universal small signal Universal small signal
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