BFU910F
NPN wideband silicon germanium RF transistor
Rev. 2 — 16 January 2015
Product data sheet
1. Product profile
1.1 General description
NPN silicon germanium RF transistor for high speed, low noise applications in a plastic,
4-pin dual-emitter SOT343F package.
The BFU910F is suitable for small signal applications up to 20 GHz.
1.2 Features and benefits
Low noise high gain microwave transistor
Minimum noise figure (NF
min
) = 0.65 dB at 12 GHz
Maximum stable gain 14.2 dB at 12 GHz
90 GHz f
T
SiGe technology
1.3 Applications
K
u
band DBS Low-Noise blocks
1.4 Quick reference data
Table 1.
Quick reference data
T
amb
= 25
C unless otherwise specified
Symbol Parameter
V
CE
I
C
P
tot
h
FE
C
CBS
f
T
MSG
NF
min
G
ass
P
L(1dB)
[1]
Conditions
R
BE
1 M
T
sp
90
C
I
C
= 6 mA; V
CE
= 2 V
V
CB
= 2 V; f = 1 MHz
I
C
= 6 mA; V
CE
= 2 V
I
C
= 6 mA; V
CE
= 2 V;
f = 12 GHz
I
C
= 6 mA; V
CE
= 2 V;
f = 12 GHz;
S
=
opt
I
C
= 6 mA; V
CE
= 2 V;
f = 12 GHz;
S
=
opt
I
C
= 10 mA; V
CE
= 2 V;
f = 12 GHz; Z
S
= Z
L
= 50
[1]
Min Typ
-
-
-
-
-
-
-
-
-
-
2.0
10
-
35
90
14.2
0.65
13.0
2
Max Unit
3.0
15
300
-
-
-
-
-
-
V
mA
mW
fF
GHz
dB
dB
dB
dBm
collector-emitter voltage
collector current
total power dissipation
DC current gain
collector-base capacitance
transition frequency
maximum stable gain
minimum noise figure
associated gain
output power at 1 dB
gain compression
1900 -
T
sp
is the temperature at the solder point of the emitter lead.
NXP Semiconductors
BFU910F
NPN wideband silicon germanium RF transistor
2. Pinning information
Table 2.
Pin
1
2
3
4
Discrete pinning
Description
emitter
base
emitter
collector
Simplified outline
Graphic symbol
3. Ordering information
Table 3.
Ordering information
Name Description
BFU910F
-
plastic surface-mounted flat pack package; reverse pinning;
4 leads
Version
SOT343F
Type number Package
4. Marking
Table 4.
BFU910F
Marking
Marking
F1*
Description
* = t : made in Malaysia
* = w : made in China
Type number
5. Design support
Table 5.
Available design support
Download from the BFU910F product information page on
http://www.nxp.com.
Support item
Device models for Agilent EEsof EDA ADS
SPICE model
S-parameters
Noise parameters
Solder pattern
Application notes
Available
Q1 2015
Q1 2015
yes
yes
yes
yes
Remarks
Based on Mextram device model.
Based on Gummel-Poon device
model.
BFU910F
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2015. All rights reserved.
Product data sheet
Rev. 2 — 16 January 2015
2 of 11
NXP Semiconductors
BFU910F
NPN wideband silicon germanium RF transistor
6. Limiting values
Table 6.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
V
CB
V
CE
V
EB
T
stg
Parameter
collector-base voltage
collector-emitter voltage
emitter-base voltage
storage temperature
Conditions
open emitter
open base
shorted base
open collector
Min Max
-
-
-
-
9.5
2.0
9.5
1.5
Unit
V
V
V
V
C
65
+150
7. Recommended operating conditions
Table 7.
Symbol
V
CE
V
EB
I
C
P
i
T
j
P
tot
[1]
Characteristics
Parameter
collector-emitter voltage
emitter-base voltage
collector current
input power
junction temperature
total power dissipation
T
sp
90
C
[1]
Conditions
R
BE
1 M
open collector
Z
S
= 50
Min
-
-
-
-
40
-
Typ
2.0
-
-
-
-
-
Max
3.0
1.0
15
0
+150
300
Unit
V
V
mA
dBm
C
mW
T
sp
is the temperature at the solder point of the emitter lead.
8. Thermal characteristics
Table 8.
Symbol
R
th(j-sp)
[1]
Thermal characteristics
Parameter
thermal resistance from junction to solder point
Conditions
[1][2]
Typ
202
Unit
K/W
T
sp
is the temperature at the solder point of the collector lead.
T
sp
has the following relation to the ambient temperature T
amb
: T
sp
= T
amb
+ P
R
th(sp-amb)
with P the power dissipation and R
th(sp-amb)
the thermal resistance between the solder point and ambient.
R
th(sp-amb)
is determined by the heat transfer properties in the application.
The heat transfer properties are set by the application board materials, the board layout and the
environment e.g. housing.
Based on simulation.
[2]
BFU910F
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2015. All rights reserved.
Product data sheet
Rev. 2 — 16 January 2015
3 of 11
NXP Semiconductors
BFU910F
NPN wideband silicon germanium RF transistor
Fig 1.
Power derating curve
9. Characteristics
Table 9.
Characteristics
T
amb
= 25
C unless otherwise specified
Symbol
Parameter
Conditions
I
C
= 10
A;
I
E
= 0
A
I
C
= 10
A;
I
B
= 0
A
I
C
= 1.5 mA; V
CE
= 1.5 V
I
C
= 6 mA; V
CE
= 2 V
C
CES
C
EBS
C
CBS
f
T
MSG
collector-emitter capacitance
emitter-base capacitance
collector-base capacitance
transition frequency
maximum stable gain
V
CE
= 2 V; f = 1 MHz
V
EB
= 0.5 V; f = 1 MHz
V
CB
= 2 V; f = 1 MHz
I
C
= 5 mA; V
CE
= 2 V
f = 10.7 GHz; V
CE
= 2 V
I
C
= 6 mA
I
C
= 10 mA
f = 12 GHz; V
CE
= 2 V
I
C
= 6 mA
I
C
= 10 mA
f = 12.75 GHz; V
CE
= 2 V
I
C
= 6 mA
I
C
= 10 mA
-
-
14.2
14.5
-
-
dB
dB
-
-
14.2
14.5
-
-
dB
dB
-
-
15.2
15.5
-
-
dB
dB
Min
9.5
2.0
-
1200
-
-
-
-
-
Typ
-
-
6
Max
-
-
15
Unit
V
V
mA
V
(BR)CBO
collector-base breakdown voltage
V
(BR)CEO
collector-emitter breakdown voltage
I
C
h
FE
collector current
DC current gain
2200 3300
1900 -
215
300
35
90
-
-
-
-
fF
fF
fF
GHz
BFU910F
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2015. All rights reserved.
Product data sheet
Rev. 2 — 16 January 2015
4 of 11
NXP Semiconductors
BFU910F
NPN wideband silicon germanium RF transistor
Table 9.
Characteristics
…continued
T
amb
= 25
C unless otherwise specified
Symbol
s
21
2
Parameter
insertion power gain
Conditions
f = 10.7 GHz; V
CE
= 2 V
I
C
= 6 mA
I
C
= 10 mA
f = 12 GHz; V
CE
= 2 V
I
C
= 6 mA
I
C
= 10 mA
f = 12.75 GHz; V
CE
= 2 V
I
C
= 6 mA
I
C
= 10 mA
NF
min
minimum noise figure
f = 10.7 GHz; V
CE
= 2 V;
S
=
opt
I
C
= 6 mA
I
C
= 10 mA
f = 12 GHz; V
CE
= 2 V;
S
=
opt
I
C
= 6 mA
I
C
= 10 mA
f = 12.75 GHz; V
CE
= 2 V;
S
=
opt
I
C
= 6 mA
I
C
= 10 mA
G
ass
associated gain
f = 10.7 GHz; V
CE
= 2 V;
S
=
opt
I
C
= 6 mA
I
C
= 10 mA
f = 12 GHz; V
CE
= 2 V;
S
=
opt
I
C
= 6 mA
I
C
= 10 mA
f = 12.75 GHz; V
CE
= 2 V;
S
=
opt
I
C
= 6 mA
I
C
= 10 mA
P
L(1dB)
IP3
o
output power at 1 dB gain compression
output third-order intercept point
f = 12 GHz; V
CE
= 2 V; Z
S
= Z
L
= 50
;
I
C
= 10 mA
f
1
= 12.000 GHz; f
2
= 12.025 GHz;
V
CE
= 2 V; Z
S
= Z
L
= 50
;
I
C
= 10 mA
-
-
-
-
13.0
13.5
2
12.5
-
-
-
-
dB
dB
dBm
dBm
-
-
13.0
13.5
-
-
dB
dB
-
-
13.5
14.0
-
-
dB
dB
-
-
0.65
0.7
-
-
dB
dB
-
-
0.65
0.7
0.85
-
dB
dB
-
-
0.6
0.65
-
-
dB
dB
-
-
12.0
12.5
-
-
dB
dB
-
-
12.0
12.5
-
-
dB
dB
-
-
13.0
13.5
-
-
dB
dB
Min
Typ
Max
Unit
BFU910F
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2015. All rights reserved.
Product data sheet
Rev. 2 — 16 January 2015
5 of 11
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