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MBRF12020

Description
Rectifier Diode, Schottky, 1 Phase, 120A, 20V V(RRM), Silicon,
CategoryDiscrete semiconductor    diode   
File Size899KB,2 Pages
ManufacturerDaco Semiconductor Co., Ltd.
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MBRF12020 Overview

Rectifier Diode, Schottky, 1 Phase, 120A, 20V V(RRM), Silicon,

MBRF12020 Parametric

Parameter NameAttribute value
MakerDaco Semiconductor Co., Ltd.
package instructionR-XUFM-X2
Reach Compliance Codeunknown
ECCN codeEAR99
applicationGENERAL PURPOSE
Diode component materialsSILICON
Diode typeRECTIFIER DIODE
Maximum forward voltage (VF)0.7 V
JESD-30 codeR-XUFM-X2
Maximum non-repetitive peak forward current800 A
Phase1
Number of terminals2
Maximum operating temperature150 °C
Minimum operating temperature-55 °C
Maximum output current120 A
Package body materialUNSPECIFIED
Package shapeRECTANGULAR
Package formFLANGE MOUNT
Maximum repetitive peak reverse voltage20 V
Maximum reverse current1000 µA
surface mountNO
technologySCHOTTKY
Terminal formUNSPECIFIED
Terminal locationUPPER
MBRF12020(R)
DACO SEMICONDUCTOR CO., LTD.
Features
High Surge Capability
TH RU
MBR F120
100(R)
SCHOTTKY DIODE MODULE TYPES 120A
Types Up to 100V V
RRM
120 Amp Recti er
20-100 Volts
FULL PACKAGE
A
B
Maximum Ratings
Part Number
MBRF12020(R)
MBRF12030(R)
MBRF12035(R)
MBRF12040(R)
MBRF12045(R)
K
Operating Temperature: -55 C to +150
Storage Temperature: -55 C to +150
Maximum
Recurrent
Maximum
Peak Reverse RMS Voltage
Voltage
20V
14V
30V
35V
40V
45V
60V
80V
100V
21V
25V
28V
32V
42V
57V
70V
Maximum DC
Blocking
Voltage
20V
30V
35V
40V
45V
60V
80V
100V
NAME
PLATE
C
M
J
F
L
MBR
F120
60(R)
MBR
F120
80(R)
MBR
F120
100(R)
H
G
E
Electrical Characteristics
@
25
Average Forward
Current
(Per pkg)
Peak Forward Surge
Current
(Per leg)
Unless Otherwise Specified
120A
800A
0.70V
0.75V
0.84V
1mA
10mA
30mA
0.80
/W
I
F(AV)
I
FSM
V
F
TC =125
DIM
Min
A
B
3.144
1.565
0.700
0.119
1.358
3.55
0.604
Inches
Max
NOM
1.585
0.800
0.14
REF.
3.65
0.65
Min
79.85
39.75
17.78
3.02
34.50
90.17
15.35
Millimeters
Max
NOM
40.26
20.32
3.50
REF.
92.71
16.51
8.3ms , half sine
I
FM
= 60 A; T
J
=25
Maximum
20V~45V
Instantaneous
Forward Voltage
60V
(Per leg)
C
E
80V~100V
Maximum
Instantaneous
Reverse Current At
Rated DC Blocking
Voltage
(Per leg)
Maximum Thermal
Resistance Junction
To Case
(Per leg)
I
R
TJ = 25
TJ = 100
TJ = 150
F
G
H
J
K
L
M
R jc
1/4-20 UNC FULL
0.380
0.185
0.275
0.410
0.195
0.295
9.65
4.70
6.99
10.41
4.95
7.49
NOTE :
(1)
s e T es t: Pul s e W idth 300 usec, Duty C ycle
<
2%
Pul
www.dacosemi.com.tw
-1-
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