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IRF7807VPBF_15

Description
N Channel Application Specific MOSFET
File Size190KB,8 Pages
ManufacturerInternational Rectifier ( Infineon )
Websitehttp://www.irf.com/
Download Datasheet View All

IRF7807VPBF_15 Overview

N Channel Application Specific MOSFET

PD-95210
IRF7807VPbF
N Channel Application Specific MOSFET
Ideal for Mobile DC-DC Converters
Low Conduction Losses
Low Switching Losses
100% R
G
Tested
Lead-Free
HEXFET
®
Power MOSFET
S
S
S
1
2
3
4
8
7
•
•
A
D
D
D
D
6
5
Description
This new device employs advanced HEXFET Power
MOSFET technology to achieve an unprecedented
balance of on-resistance and gate charge. The
reduction of conduction and switching losses makes
it ideal for high efficiency DC-DC Converters that
power the latest generation of mobile microprocessors.
A pair of IRF7807V devices provides the best cost/
performance solution for system voltages, such as
3.3V and 5V.
G
SO-8
T o p V ie w
DEVICE CHARACTERISTICS…
R
DS(on)
Q
G
Q
SW
Q
OSS
IRF7807V
17 mΩ
9.5 nC
3.4 nC
12 nC
Absolute Maximum Ratings
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain or Source
T
A
= 25°C
T
A
= 70°C
T
A
= 25°C
T
A
= 70°C
(V
GS
4.5V)
Symbol
V
DS
V
GS
I
D
I
DM
P
D
T
J
, T
STG
I
S
I
SM
IRF7807V
30
±20
8.3
6.6
66
2.5
1.6
-55 to 150
2.5
66
Units
V
™
Power Dissipation
eÃÃÃÃÃÃÃ
Pulsed Drain Current
Pulsed Source Current
A
W
°C
A
Junction & Storage Temperature Range
Continuous Source Current (Body Diode)
™
Thermal Resistance
Parameter
Maximum Junction-to-Ambient
Maximum Junction-to-Lead
h
eh
Symbol
R
θJA
R
θJL
Typ
–––
–––
Max
50
20
Units
°C/W
11/3/04

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