IRF7832PbF-1
HEXFET
®
Power MOSFET
V
DS
R
DS(on) max
(@V
GS
= 10V)
30
4.0
34
20
V
mΩ
nC
A
S
S
S
G
1
2
3
4
8
7
A
A
D
D
D
D
Q
g (typical)
I
D
(@T
A
= 25°C)
6
5
Top View
SO-8
Applications
l
l
Synchronous MOSFET for Notebook Processor Power
Synchronous Rectifier MOSFET for Isolated DC-DC Converters in Networking Systems
Benefits
Multi-Vendor Compatibility
Easier Manufacturing
Environmentally Friendlier
Increased Reliability
Features
Industry-standard pinout SO-8 Package
Compatible with Existing Surface Mount Techniques
RoHS Compliant, Halogen-Free
MSL1, Industrial qualification
⇒
Base Part Number
IRF7832PbF-1
Package Type
SO-8
Standard Pack
Form
Quantity
Tube/Bulk
95
Tape and Reel
4000
Orderable Part Number
IRF7832PbF-1
IRF7832TRPbF-1
Absolute Maximum Ratings
Parameter
V
DS
V
GS
I
D
@ T
A
= 25°C
I
D
@ T
A
= 70°C
I
DM
P
D
@T
A
= 25°C
P
D
@T
A
= 70°C
T
J
T
STG
Drain-to-Source Voltage
Gate-to-Source Voltage
Continuous Drain Current, V
GS
@ 10V
Continuous Drain Current, V
GS
@ 10V
Pulsed Drain Current
Max.
30
± 20
20
16
160
2.5
1.6
0.02
-55 to + 155
Units
V
c
A
W
W/°C
°C
Power Dissipation
Power Dissipation
Linear Derating Factor
Operating Junction and
Storage Temperature Range
Thermal Resistance
Parameter
R
θJL
R
θJA
Junction-to-Drain Lead
Junction-to-Ambient
Typ.
–––
–––
Max.
20
50
Units
°C/W
f
Notes
through
are on page 10
1
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IRF7832PbF-1
Static @ T
J
= 25°C (unless otherwise specified)
Parameter
BV
DSS
ΔΒV
DSS
/ΔT
J
R
DS(on)
V
GS(th)
ΔV
GS(th)
I
DSS
I
GSS
gfs
Q
g
Q
gs1
Q
gs2
Q
gd
Q
godr
Q
sw
Q
oss
R
g
t
d(on)
t
r
t
d(off)
t
f
C
iss
C
oss
C
rss
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Gate Threshold Voltage Coefficient
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Forward Transconductance
Total Gate Charge
Pre-Vth Gate-to-Source Charge
Post-Vth Gate-to-Source Charge
Gate-to-Drain Charge
Gate Charge Overdrive
Switch Charge (Q
gs2
+ Q
gd
)
Output Charge
Gate Resistance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Parameter
Single Pulse Avalanche Energy
Avalanche Current
Min. Typ. Max. Units
30
–––
–––
–––
1.39
–––
–––
–––
–––
–––
77
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
0.023
3.1
3.7
–––
5.7
–––
–––
–––
–––
–––
34
8.6
2.9
12
10.5
14.9
23
1.2
12
6.7
21
13
4310
990
450
–––
–––
4.0
4.8
Conditions
V V
GS
= 0V, I
D
= 250μA
V/°C Reference to 25°C, I
D
= 1mA
mΩ
V
GS
= 10V, I
D
= 20A
V
GS
= 4.5V, I
D
= 16A
2.32
V V
DS
= V
GS
, I
D
= 250μA
––– mV/°C
1.0
150
100
-100
–––
51
–––
–––
–––
–––
–––
–––
2.4
–––
–––
–––
–––
–––
–––
–––
Typ.
–––
–––
nC
Ω
μA
nA
S
e
e
V
DS
= 24V, V
GS
= 0V
V
DS
= 24V, V
GS
= 0V, T
J
= 125°C
V
GS
= 20V
V
GS
= -20V
V
DS
= 15V, I
D
= 16A
V
DS
= 15V
V
GS
= 4.5V
I
D
= 16A
See Fig. 16
V
DS
= 16V, V
GS
= 0V
V
DD
= 15V, V
GS
= 4.5V
nC
ns
I
D
= 16A
Clamped Inductive Load
V
GS
= 0V
V
DS
= 15V
ƒ = 1.0MHz
Max.
260
16
Units
mJ
A
pF
Avalanche Characteristics
E
AS
I
AR
d
Diode Characteristics
Parameter
I
S
I
SM
V
SD
t
rr
Q
rr
t
on
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Forward Turn-On Time
Min. Typ. Max. Units
–––
–––
–––
–––
–––
–––
–––
–––
41
39
3.1
A
160
1.0
62
59
V
ns
nC
Conditions
MOSFET symbol
showing the
integral reverse
G
S
D
Ã
p-n junction diode.
T
J
= 25°C, I
S
= 16A, V
GS
= 0V
T
J
= 25°C, I
F
= 16A, V
DD
= 10V
di/dt = 100A/μs
e
e
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
2
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IRF7832PbF-1
1000
TOP
VGS
10V
5.0V
4.5V
3.5V
3.0V
2.7V
2.5V
2.25V
1000
TOP
VGS
10V
5.0V
4.5V
3.5V
3.0V
2.7V
2.5V
2.25V
ID, Drain-to-Source Current (A)
ID, Drain-to-Source Current (A)
100
10
BOTTOM
100
BOTTOM
1
2.25V
0.1
10
2.25V
20μs PULSE WIDTH
Tj = 150°C
1
0.1
1
10
100
1000
20μs PULSE WIDTH
Tj = 25°C
0.01
0.1
1
10
100
1000
VDS, Drain-to-Source Voltage (V)
VDS, Drain-to-Source Voltage (V)
Fig 1.
Typical Output Characteristics
Fig 2.
Typical Output Characteristics
1000
RDS(on) , Drain-to -Source On Resistance
2.0
ID, Drain-to-Source Current
(Α
)
ID = 16A
VGS = 4.5V
1.5
100
TJ = 150°C
(Normalized)
10
1.0
T J = 25°C
1
0.5
VDS = 15V
20μs PULSE WIDTH
0
2.0
2.5
3.0
3.5
4.0
0.0
-60 -40 -20
0
20
40
60
80 100 120 140 160
VGS, Gate-to-Source Voltage (V)
T J, Junction Temperature (°C )
Fig 3.
Typical Transfer Characteristics
3
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2013 International Rectifier
Fig 4.
Normalized On-Resistance
Vs. Temperature
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November 22, 2013
IRF7832PbF-1
100000
Coss = Cds + Cgd
VGS, Gate-to-Source Voltage (V)
VGS = 0V,
f = 1 MHZ
Ciss = C + C , C SHORTED
gs gd ds
Crss = C
gd
6
5
4
3
2
1
0
ID= 16A
VDS= 24V
VDS= 15V
C, Capacitance(pF)
10000
Ciss
1000
Coss
Crss
100
1
10
100
0
10
20
30
40
50
VDS, Drain-to-Source Voltage (V)
QG Total Gate Charge (nC)
Fig 5.
Typical Capacitance Vs.
Drain-to-Source Voltage
Fig 6.
Typical Gate Charge Vs.
Gate-to-Source Voltage
1000
1000
ISD , Reverse Drain Current (
Α
)
100
T J = 150°C
10
T J = 25°C
1
ID, Drain-to-Source Current (A)
100
100μsec
10
1msec
Tc = 25°C
Tj = 150°C
Single Pulse
1
10
VDS, Drain-to-Source Voltage (V)
0.1
0.0
0.2
0.4
0.6
0.8
1.0
VGS = 0V
1.2
1.4
1.6
1
10msec
100
VSD , Source-to-Drain Voltage (V)
Fig 7.
Typical Source-Drain Diode
Forward Voltage
4
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2013 International Rectifier
Fig 8.
Maximum Safe Operating Area
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November 22, 2013
IRF7832PbF-1
24
20
VGS(th) , Gate Threshold Voltage (V)
2.5
2.0
ID, Drain Current (A)
16
12
8
4
0
25
50
75
100
125
150
T C , Case Temperature (°C)
1.5
ID = 250μA
1.0
0.5
-60 -40 -20
0
20
40
60
80 100 120 140 160
T J , Temperature (°C)
Fig 9.
Maximum Drain Current Vs.
Case Temperature
Fig 10.
Threshold Voltage Vs. Temperature
100
D = 0.50
Thermal Response ( Z thJA )
10
0.20
0.10
0.05
1
0.02
0.01
0.1
SINGLE PULSE
( THERMAL RESPONSE )
0.01
1E-006
1E-005
0.0001
0.001
0.01
0.1
1
10
100
t1 , Rectangular Pulse Duration (sec)
Fig 11.
Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
5
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2013 International Rectifier
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November 22, 2013
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