IRF8327SPBF_15 datasheet, PDF - EEWORLD Datasheet

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IRF8327SPBF_15: DescriptionUltra Low Package Inductance; File Size280KB，10 Pages; ManufacturerInternational Rectifier （ Infineon ）; Websitehttp://www.irf.com/

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IRF8327SPBF_15 Overview

Ultra Low Package Inductance

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IRF8327SPbF

DirectFET Power MOSFET

RoHS Compliant and Halogen Free

Typical values (unless otherwise specified)

Low Profile (<0.7 mm)

DSS

DS(on)

Dual Sided Cooling Compatible

30V max ±20V max 5.1mΩ@ 10V 8.5mΩ@ 4.5V

Ultra Low Package Inductance

Optimized for High Frequency Switching

g tot

gs2

oss

gs(th)

Ideal for CPU Core DC-DC Converters

9.2nC 3.0nC 1.2nC

19nC

7.9nC

1.9V

Optimized for Control FET application

Low Conduction and Switching Losses

Compatible with existing Surface Mount Techniques

100% Rg tested

DirectFET

ISOMETRIC

Applicable DirectFET Outline and Substrate Outline (see p.7,8 for details)

Description

The IRF8327SPbF combines the latest HEXFET

Power MOSFET Silicon technology with the advanced DirectFET

packaging to achieve the

lowest on-state resistance in a package that has the footprint of a MICRO-8 and only 0.7 mm profile. The DirectFET

package is compatible

with existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-red or convection soldering

techniques, when application note AN-1035 is followed regarding the manufacturing methods and processes. The DirectFET

package allows

dual sided cooling to maximize thermal transfer in power systems, improving previous best thermal resistance by 80%.

The IRF8327SPbF balances both low resistance and low charge along with ultra low package inductance to reduce both conduction and

switching losses. The reduced total losses make this product ideal for high efficiency DC-DC converters that power the latest generation of

processors operating at higher frequencies. The IRF8327SPbF has been optimized for parameters that are critical in synchronous buck

operating from 12 volt bus converters including Rds(on) and gate charge to minimize losses.

Orderable part number

IRF8327STRPbF

IRF8327STR1PbF

Package Type

DirectFET SQ

Standard Pack

Form

Quantity

Tape and Reel

4800

Tape and Reel

1000

Note

"TR" suffix

"TR1" suffix EOL notice # 264

Absolute Maximum Ratings

@ T

= 25°C

@ T

= 70°C

@ T

= 25°C

Parameter

Drain-to-Source Voltage

Gate-to-Source Voltage

Continuous Drain Current, V

@ 10V

Continuous Drain Current, V

@ 10V

Continuous Drain Current, V

@ 10V

Pulsed Drain Current

Single Pulse Avalanche Energy

Avalanche Current

Max.

±20

110

Units

VGS, Gate-to-Source Voltage (V)

Typical RDS(on) (mΩ)

Ãg

14.0

12.0

10.0

8.0

6.0

4.0

2.0

0.0

ID= 11A

ID = 14A

VDS= 24V

VDS= 15V

VDS= 6.0V

T J = 125°C

T J = 25°C

VGS, Gate -to -Source Voltage (V)

Fig 1.

Typical On-Resistance vs. Gate Voltage

Notes:

Click on this section to link to the appropriate technical paper.

Click on this section to link to the DirectFET Website.

Surface mounted on 1 in. square Cu board, steady state.

QG Total Gate Charge (nC)

Fig 2.

Typical Total Gate Charge vs. Gate-to-Source Voltage

measured with thermocouple mounted to top (Drain) of part.

Repetitive rating; pulse width limited by max. junction temperature.

Starting T

= 25°C, L = 1.1mH, R

= 25Ω, I

= 11A.

www.irf.com

2014 International Rectifier

Submit Datasheet Feedback

May 6, 2014

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