RFMD’s SGC-6489Z is a high performance SiGe HBT MMIC amplifier utiliz-
ing a Darlington configuration with an active bias network. The active bias
network provides stable current over temperature and process Beta varia-
tions. Designed to run directly from a 5V supply, the SGC-6489Z does not
require a dropping resistor as compared to traditional Darlington amplifi-
ers. The SGC-6489Z product is designed for high linearity 5V gain block
applications that require small size and minimal external components. It is
internally matched to 50.
Optimum Technology
Matching® Applied
GaAs HBT
GaAs MESFET
InGaP HBT
SiGe BiCMOS
Si BiCMOS
30.0
20.0
10.0
Bias Tee Data, Z
S
= Z
L
= 50
, T
L
0.0
Features
Single Supply Operation: 5V
at I
D
= 85mA
No Dropping Resistor
Required
Patented Self Bias Circuitry
Gain = 19.5dBm at 1950MHz
P1dB = 19.2dBm at
1950MHz
IP3 = 32.8dBm at 1950MHz
Robust 1000V ESD, Class 1C
HBM
PA Driver Amplifier
Cellular, PCS, GSM, UMTS
IF Amplifier
Wireless Data, Satellite
Gain and Return Loss
V
D
= 5V, I
D
= 85mA
S21
DE
S11
2.0
2.5
3.0
3.5
dB
SiGe HBT
GaAs pHEMT
Si CMOS
Si BJT
GaN HEMT
InP HBT
RF MEMS
LDMOS
S22
-10.0
-20.0
-30.0
-40.0
0.0
W
NE
0.5
1.0
1.5
Frequency (GHz)
FO
R
Parameter
Small Signal Gain
Min.
20.7
18.0
Specification
Typ.
Max.
22.2
23.7
dB
850MHz
19.5
21.0
dB
1950MHz
18.3
dB
2400MHz
Output Power at 1dB Compression
20.6
dBm
850MHz
17.7
19.2
dBm
1950MHz
18.4
dBm
2400MHz
Output Third Order Intercept Point
34.1
dBm
850MHz
30.8
32.8
dBm
1950MHz
31.4
dBm
2400MHz
Input Return Loss
14
18
dB
1950MHz
Output Return Loss
8
11
dB
1950MHz
Noise Figure
2.4
3.4
dB
1930MHz
Device Operating Voltage
5
V
Device Operating Current
70
82
94
mA
Thermal Resistance
70
°C/W
junction to lead
Test Conditions: V
D
= 5.0V, I
D
= 82mA, T
L
= 25°C, OIP3 Tone Spacing = 1MHz, Bias Tee Data, Z
S
= Z
L
= 50, P
OUT
per tone = 0dBm
NO
T
RF MICRO DEVICES®, RFMD®, Optimum Technology Matching®, Enabling Wireless Connectivity™, PowerStar®, POLARIS™ TOTAL RADIO™ and UltimateBlue™ are trademarks of RFMD, LLC. BLUETOOTH is a trade-
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