SEMICONDUCTOR
TECHNICAL DATA
LOW VOLTAGE HIGH SPEED SWITCHING.
FEATURES
・Small
Package : ESC.
CATHODE MARK
KDR377E
SCHOTTKY BARRIER TYPE DIODE
・Low
Forward Voltage : V
F(2)
=0.43V (Typ.)
C
1
E
MAXIMUM RATING (Ta=25℃)
CHARACTERISTIC
Maximum (Peak) Reverse Voltage
Reverse Voltage
Maximum (Peak) Forward Current
Average Forward Current
Surge Current (10ms)
Power Dissipation
Junction Temperature
Storage Temperature Range
SYMBOL
V
RM
V
R
I
FM
I
O
I
FSM
P
D
T
j
T
stg
RATING
40
40
150
30
200
150*
125
-55½125
UNIT
V
V
mA
mA
mA
mW
℃
℃
B
A
2
D
1. ANODE
2. CATHODE
DIM
A
B
C
D
E
F
G
MILLIMETERS
_
1.60 + 0.10
_
1.20 + 0.10
_
0.80 + 0.10
_
0.30 + 0.05
_
0.60 + 0.10
_
0.13 + 0.05
_
0.20 + 0.10
ESC
* : Mounted on a glass epoxy circuit board of 20×20mm,
pad dimension of 4×4mm.
Marking
Type Name
UV
ELECTRICAL CHARACTERISTICS (Ta=25℃)
CHARACTERISTIC
Forward Voltage
V
F(2)
Reverse Current
Total Capacitance
I
R
C
T
I
F
=30mA
V
R
=40V
V
R
=1V, f=1MHz
-
-
-
0.43
-
6.0
0.55
20
-
μ
A
pF
SYMBOL
V
F(1)
I
F
=1mA
TEST CONDITION
MIN.
-
TYP.
0.29
MAX.
0.37
V
UNIT
2014. 3. 31
Revision No : 4
G
F
G
1/2