RFPA5522
RFMD + TriQuint = Qorvo
RFPA5522
WiFi Integrated PA Module
4.9GHz to 5.925GHz
The RFPA5522 is a three-stage power amplifier (PA) designed for
802.11a/n/ac applications. The integrated input and output 50Ω match
greatly reduces the layout area, bill of materials and manufacturability
cost in the customer application. The RFPA5522 is manufactured on an
advanced InGaP heterojunction bipolar transistor (HBT) process and is
capable of achieving linear powers up to 23dBm with an EVM <1.8%
while maintaining excellent power added efficiency. The device is
provided in a 4.0mm x 4.0mm x 0.9mm laminate package that meets or
exceeds the power requirements of IEEE802.11a/n/ac WiFi RF systems
.
VCC1 VCC2 VCC3 GND GND
RFPA5522
Package: QFN, 20-pin,
4.0mm x 4.0mm x 0.9mm
Features
■
■
■
■
■
■
■
P
OUT
= 23dBm, 5V, 11ac, 80MHz
MCS9 @ 1.8% EVM
P
OUT
= 25dBm, 5V, 11n, 20/40
MHz, MCS7 @ 3%
Typical Gain = 33dB
3.3v Functionality
High PAE
Integrated Regulator
Input and Output Matched to 50Ω
Integrated Power Detector,
Harmonic filter, and notch filter
19
18
20
17
16
NC
GND
RFIN
GND
PA_EN
1
2
3
4
5
REGULATOR
15
14
13
12
11
GND
GND
RFOUT
GND
GND
Applications
■
■
■
■
■
Customer Premise Equipment
(CPE)
Wireless Access Points, Gateways
Routers
Set-Top Box Applications
Picocell/Femtocell
10
8
9
RC1 RC2
Ordering Information
RFPA5522SB
RFPA5522SQ
RFPA5522SR
RFPA5522TR13
RFPA5522PCK-410
Revision DS20150303
© 2015 RF Micro Devices, Inc.
6
Functional Block Diagram
Standard 5-piece Sample Bag
Standard 25-piece Sample Bag
Standard 100-piece Reel
Standard 2500-piece Reel
Fully Assembled Evaluation Board w/5-piece bag
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NC
NC PDET
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RFPA5522
Absolute Maximum Ratings
Parameter
DC Supply Voltage
DC Supply Current
Operating Temperature Range
Storage Temperature
Maximum TX Input Power into 50Ω for 11a/n/ac (No Damage).
*R1=0Ω
Maximum TX Input Power 10:1 VSWR for 11a/n/ac (No Damage).
*R1=15Ω
Moisture Sensitivity Level (260°C JEDEC J-STD-020)
*Note: For R1 placement please refer to the applications schematic
RFMD + TriQuint = Qorvo
Rating
-0.5 to +6
1000
-40 to +85
-40 to +150
+10
+15
MSL2
Unit
V
DC
mA
ºC
ºC
dBm
dBm
Caution!
ESD sensitive device.
RFMD Green: RoHS status based on EU
Directive 2011/65/EU (at time of this
document revision), halogen free per IEC
61249-2-21, < 1000ppm each of
antimony trioxide in polymeric materials
and red phosphorus as a flame retardant,
and <2% antimony in solder.
Exceeding any one or a combination of the Absolute
Maximum Rating conditions may cause permanent
damage to the device. Extended application of Absolute
Maximum Rating conditions to the device may reduce
device reliability. Specified typical performance or
functional operation of the device under Absolute
Maximum Rating conditions is not implied. This is an
InGaP PA designed for high duty cycle applications with
Tj>100
o
C
Nominal Operating Parameters
Specification
Parameter
Min
Compliance
Operating Frequency
Extended Operating Frequency
Power Supply V
CC
PA Enable - High
PA Enable - Low
5.180
4.900
3.0
1.7
0
5.925
5.180
5.25
3.3
0.5
GHz
GHz
V
V
V
Unit
Typ
Max
Condition
802.11a/n/ac
5.00
3.0
5V Transmit Performance
11ac 80MHz Output Power
11ac 80MHz EVM
11ac 160MHz Output Power
11ac 160MHz EVM
11n 20/40MHz Output Power
11n 40MHz EVM
11a Output Power
11a DEVM
Gain
Gain Variation over Temp
31
-2
23.5
25
3
-30.5
33
4
-28
2.5
5
Margin to Spectral Mask
5
5
5
285
385
330
430
23.5
25
3
-30.5
22
23
1.5
-36.5
22
1.8
-35
1.8
-35
dBm
%
dB
dBm
%
dB
dBm
%
dB
dBm
%
dB
dB
dB
dBm
dBm
dBm
dBm
mA
T= +25ºC, V
CC
=5.0V, V
PAEN
= 3.0V, Unless otherwise
noted
MCS9 256QAM
MCS9 256QAM
MCS7 64QAM
54Mbps 64QAM
Over any 100MHz Frequency band
P
OUT
=23dBm; MCS0 160MHz
P
OUT
=25dBm; MCS0 80MHz
P
OUT
=26dBm; MCS0 40MHz;
P
OUT
=27dBm; MCS0 20MHz;
P
OUT
=23dBm
P
OUT
=27dBm
Operating Current
Revision DS20150303
© 2015 RF Micro Devices, Inc.
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RFPA5522
Specification
Parameter
Min
5V Transmit Performance
Quiescent Current
PA Enable Current
Leakage Current
Second Harmonic
Third Harmonic
OOB Rejection
Input Return Loss
Output Return Loss
Power Detector Range
150
4
1
-45
-50
-5
7
12
12
0.25
0.65
0.88
mA
uA
uA
dBm/MHz
dBm/MHz
dB
dB
dB
dB
V
V
RFMD + TriQuint = Qorvo
Unit
Typ
Max
T= +25ºC, V
CC
=5.0V, V
PAEN
= 3.0V, Unless otherwise
noted
20
5
-40
-45
PA_EN High
RF OFF; V
PAEN
= 0V
P
OUT
= 27dBm
P
OUT
= 27dBm
Gain (S21)@ 3.3 – 3.8GHz
Gain ( S21)@ 7.0 GHz
Condition
P
OUT
= 0dBm
P
OUT
= 23dBm
P
OUT
= 27dBm
3.3V Transmit Performance
11ac 80MHz Output Power
11ac 80MHz EVM
11n 20/40MHz Output Power
11n 40MHz EVM
11ac 160MHz Output Power
11ac 160MHz EVM
Gain
Gain Variation over Temp
31
-2.5
18
1.5
-36.5
33
5
Margin to Spectral Mask
5
5
5
210
275
150
375
1
-50
-50
12
12
0.25
0.5
0.7
19
18
19
1.5
-36.5
20
1.8
-35
3
-30
1.8
-35
+3.0
dBm
%
dB
dBm
%
dB
dBm
%
dB
dB
dB
dBm
dBm
dBm
dBm
mA
mA
uA
uA
dBm/MHz
dBm/MHz
dB
dB
V
V
V
T= +25ºC, V
CC
=3.3V, V
PAEN
= 3.0V, Unless otherwise
noted
MCS9 256QAM
MCS7 64QAM
MCS9 256QAM
Over 100MHz band
P
OUT
=21dBm; MCS0 80MHz
P
OUT
=19dBm; MCS0 160MHz
P
OUT
=22dBm; MCS0 40MHz
P
OUT
=23dBm; MCS0 20MHz
P
OUT
=19dBm
P
OUT
=23dBm
PA_EN High
RF OFF; V
PAEN
= 0V
P
OUT
= 23dBm
Operating Current
Quiescent Current
PA Enable Current
Leakage Current
Second Harmonic
Third Harmonic
Input Return Loss
Output Return Loss
Power Detector Range
235
300
500
5
-45
-45
P
OUT
= 0dBm
Pout = 18dBm
P
OUT
= 23dBm
General Specifications -
Stability
Output VSWR
Output Power Range
Revision DS20150303
© 2015 RF Micro Devices, Inc.
0
4:1
27
dBm
CW signal. No spurious above -41.25dBm/MHz for non-harmonic
related signals.
Disclaimer: Subject to change without notice
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RFPA5522
Specification
Parameter
Min
General Specifications -
Stability
Output VSWR
Output Power Range
Output P1dB
Ramp ON/OFF time
0
33
29
200
4:1
27
dBm
dBm
dBm
nS
RFMD + TriQuint = Qorvo
Unit
Typ
Max
Condition
CW signal. No spurious above -41.25dBm/MHz for non-harmonic
related signals.
CW signal; 5V
CW signal; 3.3V
10-90% / 90-10% of gain
General Specifications
Thermal Resistance*
ESD HBM
ESD CDM
500
500
32
°C/W
V
V
At Pout=27dBm
EIA/JESD22-114A; All pins
JESD22-C101C; All pins
Revision DS20150303
© 2015 RF Micro Devices, Inc.
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RFPA5522
RFPA5522 5V Applications Schematic
VCC2
VCC1
R1
0 ohµ
RFMD + TriQuint = Qorvo
VCC3
C1
2.2uF
C2
2.2uF
C3
2.2µF
20
1
2
J1
RF_IN
50Ω
µstrip
19
18
17
16
15
14
3
C7
10pF
U1
RFPA5522
13
12
11
C8
10pF
50Ω
µstrip
J2
RF_OUT
4
5
6
7
8
9
10
PAEN
C5
1nF
C6
10pF
R2
560
ohµ
C9
3.3nF
PDET
R4
750
ohµ
C4
5.6nF
*0402 component size required
Revision DS20150303
© 2015 RF Micro Devices, Inc.
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Disclaimer: Subject to change without notice
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