SOT323 PNP SILICON PLANAR
HIGH PERFORMANCE TRANSISTOR
DRAFT SPECIFICATION ISSUE A – OCTOBER 94
FEATURES
* Extremely low saturation voltage
* 500mW power dissipation
* 1 Amp continuous collector current (I
C
)
APPLICATIONS
* Ideally suited for space / weight critical applications
ZUMT591
C
B
SOT323
E
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Peak Pulse Current
Continuous Collector Current
Base Current
Power Dissipation at T
amb
=25°C
Operating and Storage Temperature Range
SYMBOL
V
CBO
V
CEO
V
EBO
I
CM
I
C
I
B
P
tot
T
j
:T
stg
VALUE
-80
-60
-5
-2
-1
-200
500
-55 to +150
UNIT
V
V
V
A
A
mA
mW
°C
ELECTRICAL CHARACTERISTICS (at T
amb
= 25°C).
PARAMETER
Collector-Base
Breakdown Voltage
Collector-Emitter
Breakdown Voltage
Emitter-Base Breakdown
Voltage
Collector Cut-Off Current
Collector Cut-Off Current
Emitter Cut-Off Current
Collector-Emitter
Saturation Voltage
Base-Emitter
Saturation Voltage
Base-Emitter
Turn On Voltage
SYMBOL
V
(BR)CBO
V
CEO(sus)
V
(BR)EBO
I
CBO
I
CES
I
EBO
V
CE(sat)
V
BE(sat)
V
BE(on)
MIN.
-80
-60
-5
-100
-100
-100
-0.3
-0.6
-1.2
-1.0
TYP.
MAX.
UNIT
V
V
V
nA
nA
nA
V
V
V
V
CONDITIONS.
I
C
=-100µA, I
E
=-0
I
C
=-10mA*, I
B
=-0
I
E
=-100µA, I
C
=-0
V
CB
=-60V
VCE=-60V
V
EB
=-4V, I
C
=-0
I
C
=-500mA, I
B
=-50mA*
I
C
=-1A, I
B
=-100mA*
I
C
=-1A, I
B
=-100mA*
IC=-1A, V
CE
=-5V*
* Measured under pulsed conditions. Pulse width=300µs. Duty cycle®2%
ZUMT591
ELECTRICAL CHARACTERISTICS (at T
amb
= 25°C).
PARAMETER
Static Forward Current
Transfer Ratio
SYMBOL
h
FE
MIN.
100
100
80
15
150
10
TYP.
MAX.
300
UNIT
CONDITIONS.
I
C
=-1mA, V
CE
=-5V*
I
C
=-500mA, V
CE
=-5V*
I
C
=-1A, V
CE
=-5V*
I
C
=-2A, V
CE
=-5V*
MHz
pF
I
C
=-50mA, V
CE
=-10V*
f=100MHz
V
CB
=-10V, f=1MHz
Transition Frequency
Ouput Capacitance
f
T
C
obo
* Measured under pulsed conditions. Pulse width=300µs. Duty cycle®2%
NOTE
This data is derived from development material and does not necessarily mean that the device will
go into production
© Zetex Semiconductors plc 2005
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