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BUK958R5-40E,127

Description
N-channel TrenchMOS logic level FET TO-220 3-Pin
CategoryDiscrete semiconductor    The transistor   
File Size331KB,14 Pages
ManufacturerNexperia
Websitehttps://www.nexperia.com
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BUK958R5-40E,127 Overview

N-channel TrenchMOS logic level FET TO-220 3-Pin

BUK958R5-40E,127 Parametric

Parameter NameAttribute value
Brand NameNexperia
Parts packaging codeTO-220
package instructionPLASTIC, SC-46, 3 PIN
Contacts3
Manufacturer packaging codeSOT78A

BUK958R5-40E,127 Preview

Important notice
Dear Customer,
On 7 February 2017 the former NXP Standard Product business became a new company with the
tradename
Nexperia.
Nexperia is an industry leading supplier of Discrete, Logic and PowerMOS
semiconductors with its focus on the automotive, industrial, computing, consumer and wearable
application markets
In data sheets and application notes which still contain NXP or Philips Semiconductors references, use
the references to Nexperia, as shown below.
Instead of http://www.nxp.com, http://www.philips.com/ or http://www.semiconductors.philips.com/,
use
http://www.nexperia.com
Instead of sales.addresses@www.nxp.com or sales.addresses@www.semiconductors.philips.com, use
salesaddresses@nexperia.com
(email)
Replace the copyright notice at the bottom of each page or elsewhere in the document, depending on
the version, as shown below:
- © NXP N.V. (year). All rights reserved or © Koninklijke Philips Electronics N.V. (year). All rights
reserved
Should be replaced with:
-
© Nexperia B.V. (year). All rights reserved.
If you have any questions related to the data sheet, please contact our nearest sales office via e-mail
or telephone (details via
salesaddresses@nexperia.com).
Thank you for your cooperation and
understanding,
Kind regards,
Team Nexperia
BUK958R5-40E
11 September 2012
N-channel TrenchMOS logic level FET
Product data sheet
1. Product profile
1.1 General description
Logic level N-channel MOSFET in a SOT78 package using TrenchMOS technology.
This product has been designed and qualified to AEC Q101 standard for use in high
performance automotive applications.
1.2 Features and benefits
AEC Q101 compliant
Repetitive avalanche rated
Suitable for thermally demanding environments due to 175 °C rating
True logic level gate with Vgst(th) rating of greater than 0.5V at 175 °C
1.3 Applications
12 V Automotive systems
Motors, lamps and solenoid control
Start-Stop micro-hybrid applications
Transmission control
Ultra high performance power switching
1.4 Quick reference data
Table 1.
Symbol
V
DS
I
D
P
tot
R
DSon
Quick reference data
Parameter
drain-source voltage
drain current
total power dissipation
Conditions
T
j
≥ 25 °C; T
j
≤ 175 °C
V
GS
= 5 V; T
mb
= 25 °C;
Fig. 1
T
mb
= 25 °C;
Fig. 2
V
GS
= 5 V; I
D
= 20 A; T
j
= 25 °C;
Fig. 11
[1]
Min
-
-
-
Typ
-
-
-
Max
40
75
96
Unit
V
A
W
Static characteristics
drain-source on-state
resistance
gate-drain charge
-
6.4
8.1
Dynamic characteristics
Q
GD
V
GS
= 5 V; I
D
= 20 A; V
DS
= 32 V;
Fig. 13; Fig. 14
[1]
Continuous current is limited by package.
-
7.3
-
nC
Scan or click this QR code to view the latest information for this product
NXP Semiconductors
BUK958R5-40E
N-channel TrenchMOS logic level FET
2. Pinning information
Table 2.
Pin
1
2
3
mb
Pinning information
Symbol Description
G
D
S
D
gate
drain
source
mounting base; connected to
drain
G
mbb076
Simplified outline
mb
Graphic symbol
D
S
1 2 3
TO-220AB (SOT78A)
3. Ordering information
Table 3.
Ordering information
Package
Name
BUK958R5-40E
TO-220AB
Description
plastic single-ended package; heatsink mounted; 1 mounting
hole; 3-lead TO-220AB
Version
SOT78A
Type number
4. Marking
Table 4.
Marking codes
Marking code
BUK958R5-40E
Type number
BUK958R5-40E
5. Limiting values
Table 5.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
V
DS
V
DGR
V
GS
Parameter
drain-source voltage
drain-gate voltage
gate-source voltage
Conditions
T
j
≥ 25 °C; T
j
≤ 175 °C
R
GS
= 20 kΩ
T
j
≤ 175 °C; DC
T
j
≤ 175 °C; Pulsed
I
D
drain current
T
mb
= 25 °C; V
GS
= 5 V;
Fig. 1
T
mb
= 100 °C; V
GS
= 5 V;
Fig. 1
BUK958R5-40E
All information provided in this document is subject to legal disclaimers.
Min
-
-
-10
[1][2]
[3]
Max
40
40
10
15
75
56
Unit
V
V
V
V
A
A
-15
-
-
© NXP B.V. 2012. All rights reserved
Product data sheet
11 September 2012
2 / 13
NXP Semiconductors
BUK958R5-40E
N-channel TrenchMOS logic level FET
Symbol
I
DM
P
tot
T
stg
T
j
I
S
I
SM
E
DS(AL)S
Parameter
peak drain current
total power dissipation
storage temperature
junction temperature
Conditions
T
mb
= 25 °C; pulsed; t
p
≤ 10 µs;
Fig. 4
T
mb
= 25 °C;
Fig. 2
Min
-
-
-55
-55
Max
315
96
175
175
Unit
A
W
°C
°C
Source-drain diode
source current
peak source current
T
mb
= 25 °C
pulsed; t
p
≤ 10 µs; T
mb
= 25 °C
I
D
= 75 A; V
sup
≤ 40 V; R
GS
= 50 Ω;
V
GS
= 5 V; T
j(init)
= 25 °C; unclamped;
Fig. 3
[1]
[2]
[3]
[4]
[5]
100
I
D
(A)
75
(1)
[3]
-
-
75
315
A
A
Avalanche ruggedness
non-repetitive drain-source
avalanche energy
[4][5]
-
44
mJ
Accumulated pulse duration up to 50 hours delivers zero defect ppm
Significantly longer life times are achieved by lowering T
j
and or V
GS
Continuous current is limited by package.
Single-pulse avalanche rating limited by maximum junction temperature of 175 °C.
Refer to application note AN10273 for further information.
003aah405
120
P
der
(%)
80
03aa16
50
40
25
0
0
50
100
150 T
200
mb
(° C)
0
0
50
100
150
T
mb
(°C)
200
(1) Capped at 75A due to package
Fig. 1.
Continuous drain current as a function of
mounting base temperature
Fig. 2.
Normalized total power dissipation as a
function of mounting base temperature
BUK958R5-40E
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2012. All rights reserved
Product data sheet
11 September 2012
3 / 13
NXP Semiconductors
BUK958R5-40E
N-channel TrenchMOS logic level FET
10
2
I
AL
(A)
10
003aah406
(1)
1
(2)
(3)
10
-1
10
-3
10
-2
10
-1
1 t (ms) 10
AL
Fig. 3.
Single pulse avalanche rating; avalanche current as a function of avalanche time
10
3
I
D
(A)
10
2
Limit R
DSon
= V
DS
/ I
D
003aah407
t
p
=10 µ s
100 µ s
10
DC
1
1 ms
10 ms
100 ms
10
-1
10
-1
1
10
V
DS
(V)
10
2
Fig. 4.
Safe operating area; continuous and peak drain currents as a function of drain-source voltage
6. Thermal characteristics
Table 6.
Symbol
R
th(j-mb)
Thermal characteristics
Parameter
thermal resistance
from junction to
mounting base
thermal resistance
from junction to
ambient
Conditions
Fig. 5
Min
-
Typ
-
Max
1.56
Unit
K/W
R
th(j-a)
vertical in still air
-
60
-
K/W
BUK958R5-40E
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2012. All rights reserved
Product data sheet
11 September 2012
4 / 13

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