SM-8 COMPLEMENTARY MEDIUM POWER
DARLINGTON TRANSISTORS
ISSUE 2 February 1997
ZDT6702
C
1
C
1
C
2
C
2
PARTMARKING DETAIL T6702
B
1
E
1
B
2
E
2
NPN
PNP
SM-8
(8 LEAD SOT223)
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Peak Pulse Current
Continuous Collector Current
Operating and Storage Temperature
Range
SYMBOL
V
CBO
V
CEO
V
EBO
I
CM
I
C
T
j
:T
stg
NPN
80
60
10
4
1.75
PNP
-80
-60
-10
-4
-1.75
UNIT
V
V
V
A
A
°C
-55 to +150
THERMAL CHARACTERISTICS
PARAMETER
Total Power Dissipation at T
amb
= 25°C*
Any single die on
Both die on equally
Derate above 25°C*
Any single die on
Both die on equally
Thermal Resistance - Junction to Ambient*
Any single die on
Both die on equally
SYMBOL
P
tot
VALUE
2.25
2.75
18
22
55.6
45.5
UNIT
W
W
mW/ °C
mW/ °C
°C/ W
°C/ W
* The power which can be dissipated assuming the device is mounted in a typical manner
on a PCB with copper equal to 2 inches square.
ZDT6702
NPN TRANSISTOR
ELECTRICAL CHARACTERISTICS (at T
amb
= 25°C unless otherwise stated).
PARAMETER
Collector-Base
Breakdown Voltage
Collector-Emitter
Breakdown Voltage
Emitter-Base
Breakdown Voltage
Collector Cutoff
Current
SYMBOL
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CBO
MIN.
80
60
10
TYP.
200
100
15
0.5
0.1
50
0.83
1.0
1.68
1.55
5K
5K
3.5K
0.5K
13K
13K
9K
2K
140
70
15
0.5
2.1
MHz
pF
pF
µ
s
µ
s
MAX.
UNIT
V
V
V
CONDITIONS.
I
C
=100
µ
A
I
C
=10mA*
I
E
=100
µ
A
V
CB
=60V
V
CB
=60V,
T
amb
=100°C
V
EB
=8V
V
CE
=60V
I
C
=0.5A, I
B
=0.5mA*
I
C
=1.75A, I
B
=2mA*
I
C
=1.75A, I
B
=2mA*
I
C
=1.75A, V
CE
=5V*
I
C
=10mA, V
CE
=5V
I
C
=500mA, V
CE
=5V
I
C
=2A, V
CE
=5V
I
C
=4A, V
CE
=5V*
I
C
=100mA, V
CE
=10V
f=100MHz
V
EB
=500mV, f=1MHz
V
CB
=10V, f=1MHz
I
C
=500mA, V
CE
=10V
I
B1
=I
B2
=0.5mA
10
10
10
500
0.95
1.28
1.85
1.75
µ
A
nA
Emitter Cutoff Current I
EBO
Colllector-Emitter
Cutoff Current
Collector-Emitter
Saturation Voltage
Base-Emitter
Saturation Voltage
Base-Emitter
Turn-On Voltage
I
CES
V
CE(sat)
V
BE(sat)
V
BE(on)
nA
nA
V
V
V
V
Static Forward
h
FE
Current Transfer Ratio
Transition Frequency
Input Capacitance
Output Capacitance
Switching Times
f
T
C
ibo
C
obo
t
on
t
off
*Measured under pulsed conditions. Pulse width=300
µ
s. Duty cycle
≤
2%
ZDT6702
PNP TRANSISTOR
ELECTRICAL CHARACTERISTICS (at T
amb
= 25°C unless otherwise stated).
PARAMETER
Collector-Base
Breakdown Voltage
Collector-Emitter
Breakdown Voltage
Emitter-Base
Breakdown Voltage
Collector Cutoff
Current
SYMBOL
V
(BR)CBO
V
CEO(SUS)
V
(BR)EBO
I
CBO
MIN.
-80
-60
-10
TYP.
-120
-90
-15
-0.5
-0.1
-50
-0.86
-1.05
-1.7
-1.55
2K
2K
1.5K
1K
8K
8K
7K
4K
140
90
25
0.75
1.2
MHz
pF
pF
µ
s
µ
s
MAX.
UNIT
V
V
V
CONDITIONS.
I
C
=-100
µ
A
I
C
=-10mA*
I
E
=-100
µ
A
V
CB
=-60V
V
CB
=-60V,
T
amb
=100°C
V
EB
=-8V
V
CE
=-60V
I
C
=-0.5A, I
B
=-0.5mA*
I
C
=-1.75A, I
B
=-2mA*
I
C
=-1.75A, I
B
=-2mA*
I
C
=-1.75A, V
CE
=-5V*
I
C
=-10mA, V
CE
=-5V*
I
C
=-500mA, V
CE
=-5V*
I
C
=-2A, V
CE
=-5V*
I
C
=-4A, V
CE
=-5V*
I
C
=-100mA, V
CE
=-10V
f=100MHz
V
EB
=-0.5V, f=1MHz
V
CE
=-10V, f=1MHz
I
C
=-0.5A, V
CE
=-10V
I
B1
=I
B2
=-0.5mA
-10
-10
-10
-500
-1.0
-1.28
-1.9
-1.85
µ
A
nA
nA
Emitter Cutoff Current I
EBO
Collector-Emitter
Cutoff Current
Collector-Emitter
Saturation Voltage
Base-Emitter
Saturation Voltage
Base-Emitter Turn-On
Voltage
I
CES
V
CE(sat)
V
BE(sat)
V
BE(on)
nA
V
V
V
V
Static Forward
h
FE
Current Transfer Ratio
Transition Frequency
Input Capacitance
Output Capacitance
Switching Times
f
T
C
ibo
C
obo
t
on
t
off
*Measured under pulsed conditions. Pulse width=300
µ
s. Duty cycle
≤
2%
ZDT6702
TYPICAL CHARACTERISTICS (NPN TRANSISTOR)
1.0
0.8
0.6
0.4
0.2
0
1m
10m
100m
1
10
IC/IB=1000
IC/IB=500
+25°C
1.2
1.0
0.8
0.6
0.4
0.2
1m
IC/IB=1000
-55°C
+25°C
+85°C
+150°C
10m
100m
1
10
I
C
- Collector Current (A)
V
CE(sat)
v I
C
I
C
- Collector Current (A)
V
CE(sat)
v I
C
20K
16K
12K
8K
4K
0
VCE=5V
2.0
+85°C
+25°C
-55°C
IC/IB=1000
1.6
1.2
0.8
0.4
0
1m
-55°C
+25°C
+85°C
+150°C
1m
10m
100m
1
I
C
- Collector Current (A)
10
h
FE
v I
C
I
C
- Collector Current (A)
V
BE(sat)
v I
C
10m
100m
1
10
2.0
1.6
1.2
0.8
0.4
0
VCE=5V
10
1
-55°C
+25°C
+85°C
+150°C
100m
DC
1s
100m
s
10m
s
1ms
100us
1m
10m
100m
1
I
C
- Collector Current (A)
10
10m
100m
V
BE(on)
v I
C
V
CE
- Collector Emitter Voltage (V)
1
10
100
Safe Operating Area
ZDT6702
TYPICAL CHARACTERISTICS (PNP TRANSISTOR)
1.0
0.8
0.6
0.4
0.2
0
1m
10m
100m
1
I
C
- Collector Current (A)
10
IC/IB=1000
IC/IB=500
+25°C
1.2
1.0
0.8
0.6
0.4
0.2
0
1m
IC/IB=1000
-55°C
+25°C
+85° C
+150° C
V
CE(sat)
v I
C
I
C
- Collector Current (A)
V
CE(sat)
v I
C
10m
100m
1
10
20k
VCE=5V
+85°C
+25°C
-55°C
2.0
1.6
1.2
0.8
IC/IB=1000
15k
10k
5k
0
0.4
1m
10m
100m
1
I
C
- Collector Current (A)
10
0
1m
10m
100m
1
-55° C
+25°C
+85°C
+150°C
h
FE
v I
C
I
C
- Collector Current (A)
V
BE(sat)
v I
C
10
2.0
1.6
1.2
0.8
0.4
0
VCE=5V
10
1
-55° C
+25° C
+85° C
+150° C
100m
DC
1s
100ms
10ms
1ms
100us
1m
10m
100m
1
10
10m
100m
1
10
100
IC - Collector Current (A)
V
BE(on)
v I
C
V
CE
- Collector Emitter Voltage (V)
Safe Operating Area
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