ZHCS400
40V SURFACE MOUNT SCHOTTKY BARRIER DIODE
Product Summary
•
•
•
V
R
= 40V
I
F
= 0.40A
I
R
= 40μA
Features and Benefits
•
•
•
•
•
•
Low V
F
High Current Capability (I
F
= 0.40A)
Miniature Surface Mount Package
Low V
F
, fast switching Schottky
Package thermally rated to 150°C
Qualified to AEC-Q101 Standards for High Reliability
Description and Applications
This compact SOD323 packaged Schottky diode offers users an
excellent performance combination comprising high current operation,
extremely low leakage and low forward voltage ensuring suitability for
applications requiring efficient operation at higher temperatures
(above 85°C) see Operational efficiency chart on page 4.
•
•
•
DC – DC Converters
Mobile Telecomms
PCMCIA
Mechanical Data
•
•
•
•
•
•
Case: SOD323
Case Material: UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminal Connections: Cathode Band
Terminals: Finish - Matte Tin annealed over Alloy 42 leadframe.
Solderable per MIL-STD-202, Method 208
Weight: 0.004 grams (approximate)
SOD323
Top View
Ordering Information
(Note 1)
Device
ZHCS400TA
ZHCS400TC
Notes:
Packaging
SOD323
SOD323
Shipping
3,000/Tape & Reel
10,000/Tape & Reel
1. For Packaging Details, go to our website at http://www.diodes.com.
Marking Information
Anode
BD
Cathode
BD = Product Type Marking Code
ZHCS400
Document number: DS33215 Rev. 8 - 2
1 of 6
www.diodes.com
March 2012
© Diodes Incorporated
ZHCS400
Maximum Ratings
@T
A
= 25°C unless otherwise specified
Characteristic
Continuous Reverse Voltage
Continuous Forward Current
Forward Voltage @I
F
= 400mA
Average Peak Forward Current; D.C. = 50%
Continuous Drain Current (Note x)
t
≤
100μs
t
≤
10ms
Symbol
V
R
I
F
V
F
I
FAV
I
FSM
Value
40
400
500
1000
6.75
3
Units
V
mA
mV
mA
A
A
Thermal Characteristics
Characteristic
Power Dissipation, T
A
= 25°C
Storage Temperature Range
Symbol
P
D
T
STG
Value
250
-55 to +150
Unit
mW
°C
ZHCS400
Document number: DS33215 Rev. 8 - 2
2 of 6
www.diodes.com
March 2012
© Diodes Incorporated
ZHCS400
Electrical Characteristics
@T
A
= 25°C unless otherwise specified
Characteristic
Reverse Breakdown Voltage
Symbol
V
(BR)R
Min
40
-
-
-
-
-
-
-
-
-
-
Typ
60
270
300
370
425
550
640
810
440
15
20
Max
-
300
350
460
500
670
780
1050
-
40
-
Unit
V
Test Condition
I
R
= 200μA
I
F
= 50mA
I
F
= 100mA
I
F
= 250mA
I
F
= 400mA
I
F
= 750mA
I
F
= 1,000mA
I
F
= 1,500mA
I
F
= 500mA, TA = 100°C
V
R
= 30V
f = 1MHz, V
R
= 25V
Forward Voltage
V
F
mV
Reverse Current
Diode Capacitance
I
R
C
D
μA
pF
Operational efficiency chart
The operational efficiency chart indicates the beneficial use of the ZLLS series diodes in applications requiring higher voltage, higher temperature
operation. Circuits requiring low voltage low temperature operation will benefit from using Zetex low V
F
ZHCS series diodes.
ZHCS400
Document number: DS33215 Rev. 8 - 2
3 of 6
www.diodes.com
March 2012
© Diodes Incorporated
Electronics Design Contest
京公网安备 11010802033920号
EEWORLD
