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DMN3200U_15

Description
N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR
File Size204KB,5 Pages
ManufacturerDiodes
Websitehttp://www.diodes.com/
Download Datasheet View All

DMN3200U_15 Overview

N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR

DMN3200U
N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR
Features
Low On-Resistance
90 m @ V
GS
= 4.5V
110 m @ V
GS
= 2.5V
200 m @ V
GS
= 1.5V
Mechanical Data
Case: SOT-23
Case Material: Molded Plastic, “Green” Molding Compound.
UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminal Connections: See Diagram
Terminals: Finish
Matte Tin annealed over Copper
leadframe. Solderable per MIL-STD-202, Method 208
e3
Weight: 0.008 grams (approximate)
NEW PRODUCT
Very Low Gate Threshold Voltage
Low Input Capacitance
ESD Protected Gate
Fast Switching Speed
Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
Qualified to AEC-Q101 Standards for High Reliability
SOT-23
Drain
D
Gate
ESD PROTECTED TO 3kV
TOP VIEW
Gate
Protection
Diode
Source
G
TOP VIEW
S
Equivalent Circuit
Ordering Information
Part Number
DMN3200U-7
Notes:
(Note 4)
Case
SOT-23
Packaging
3000/Tape & Reel
1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. For packaging details, go to our website at http://www.diodes.com/products/packages.html.
Marking Information
32N
Chengdu A/T Site
Shanghai A/T Site
Date Code Key
Year
Code
Month
Code
2007
U
Jan
1
2008
V
Feb
2
2009
W
Mar
3
2010
X
Apr
4
YM
32N
32N = Marking Code
YM = Date Code Marking for SAT (Shanghai Assembly/ Test site)
YM
= Date Code Marking for CAT (Chengdu Assembly/ Test site)
Y or
Y
= Year (ex: A = 2013)
M = Month (ex: 9 = September)
YM
2011
Y
May
5
Jun
6
2012
Z
Jul
7
2013
A
Aug
8
2014
B
Sep
9
2015
C
Oct
O
2016
D
Nov
N
2017
E
Dec
D
DMN3200U
Document number: DS31188 Rev. 5 - 2
1 of 5
www.diodes.com
October 2013
© Diodes Incorporated
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