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BAS40V

Description
0.2 A, 40 V, 2 ELEMENT, SILICON, SIGNAL DIODE
Categorysemiconductor    Discrete semiconductor   
File Size527KB,3 Pages
ManufacturerWILLAS ELECTRONIC CORP.
Websitehttp://www.willas.com.tw/
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BAS40V Overview

0.2 A, 40 V, 2 ELEMENT, SILICON, SIGNAL DIODE

WILLAS
SOT-563 Plastic-Encapsulate Diodes
-20V- 200V
1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS
SOD-123
Batch process design, excellent power dissipation offers
FM120-M
BAS40V
THRU
FM1200-M
Pb Free Product
SOT-563
SOD-123H
PACKAGE
Features
Package outline
SCHOTTKY
profile surface mounted application in order to
Low
BARRIER DIODE
optimize board space.
FEATURES
Low power loss, high efficiency.
Low
High current capability, low forward voltage drop.
Forward Voltage Drop
Switching
Fast
High surge capability.
Guardring for overvoltage protection.
Pb-Free package is available
Ultra high-speed switching.
RoHS product for packing
chip, metal silicon junction.
Silicon epitaxial planar
code suffix ”G”
Lead-free parts meet
packing code suffix “H”
Halogen free product for
environmental standards of
Moisture Sensitivity Level 1
suffix "G"
RoHS product for packing code
MIL-STD-19500 /228
better reverse leakage current and thermal resistance.
0.146(3.7)
0.130(3.3)
0.012(0.3) Typ.
6
5
4
0.071(1.8)
0.056(1.4)
Marking: KAN
Halogen free product for packing code suffix "H"
Mechanical data
0.031(0.8) Typ.
1
2
3
0.040(1.0)
0.024(0.6)
ry
Limit
40
200
150
667
125
13
30
21
14
40
28
40
15
16
-55~+150
60
50
35
50
42
60
1.0
 
30
Min
40
40
120
30
Epoxy : UL94-V0 rated flame retardant
Case : Molded plastic, SOD-123H
Maximum Ratings @Ta=25℃
,
Terminals :Plated terminals, solderable per MIL-STD-750
Parameter
Method 2026
0.031(0.8) Typ.
V
RM
V
R
I
O
na
12
20
14
20
Polarity : Indicated by cathode band
Non-Repetitive Peak Reverse Voltage
Mounting Position : Any
DC Blocking Voltage
Weight : Approximated 0.011 gram
Average Rectified Output Current
Symbol
Dimensions in inches and (millimeters)
Unit
V
mA
mW
℃/W
Pd
Power Dissipation
Ratings at 25℃ ambient temperature unless otherwise specified.
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Pr
eli
RATINGS
 
Single phase half wave, 60Hz, resistive
Thermal Resistance Junction to
of inductive load.
R
θ
JA
For capacitive load, derate current by 20%
Ambient
mi
T
J
T
STG
V
RRM
V
RMS
V
DC
 
I
FSM
Symbol
Storage
Recurrent Peak Reverse Voltage
Maximum
temperature range
Maximum RMS Voltage
Maximum DC Blocking Voltage
 
Marking Code
temperature
SYMBOL
FM120-M
H FM130-MH
FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH
UN
18
80
56
80
10
100
70
100
150
105
115
120
200
140
200
Vo
Vo
150
Vo
Maximum Average Forward Rectified Current
I
ELECTRICAL CHARACTERISTICS (Ta=
O
25℃ unless otherwise specified)
Am
Peak Forward Surge Current 8.3 ms single half sine-wave
superimposed on rated load (JEDEC method)
Parameter
Test
conditions
Max
Unit
V
nA
mV
0.9
pF
 
Am
Reverse breakdown
(Note 2)
Typical Thermal Resistance
voltage
Typical Junction Capacitance (Note 1)
Storage Temperature Range
R
ΘJA
V
(BR)
C
J
T
J
TSTG
 
I
R
= 10
μ
A
 
Reverse voltage
Range
Operating Temperature
leakage current
 
 
200
to +150
-55
380
1000
0.85
5
℃/
PF
I
R
V
F
V
R
=30V
-55 to +125
I
F
=1mA
I =40mA
0.50
V
R
=0,f=1MHz
0.70
 
-
65
to +175
 
Forward voltage
CHARACTERISTICS
Maximum Forward Voltage at 1.0A DC
Total capacitance
Maximum Average Reverse Current at @T A=25℃
Rated DC Blocking Voltage
Reverse recovery time
 
F
SYMBOL
FM120-MH
FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH
FM1150-MH
FM1200-MH
UN
V
F
@T A=125℃
C
T
t
rr
0.92
 
Vo
I
R
I
F
=10mA, I
R
=I
F
=1mA
R
L
=100Ω
0.5
10
5
mA
ns
NOTES:
1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC.
2- Thermal Resistance From Junction to Ambient
 
 
2012-11
2012-06
WILLAS ELECTRONIC CORP.
WILLAS ELECTRONIC CORP.

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