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SMB1W-770R

Description
High Power LED
File Size370KB,5 Pages
ManufacturerRoithner Lasertechnik GmbH
Websitehttp://www.roithner-laser.com/
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SMB1W-770R Overview

High Power LED

SMB1W-770R
TECHNICAL DATA
High Power LED, SMD
AlGaAs
SMB1W-770R are AlGaAs High Power LEDs mounted on a cooper heat sink with a 5x5 mm SMD
package and molded with silicone resin. On forward bias, it emits a radiation of typical 330 mW at
a peak wavelength of 770 nm.
Specifications
Structure: AlGaAs, 1W high power chip
Peak Wavelength: typ. 770 nm
Optical Output Power: typ. 330 mW
Package
SMD, PPA resin
Lead frame die: silver plated on copper
Lens: silicone resin
Absolute Maximum Ratings (T
a
=25°C)
Item
Power Dissipation
Forward Current
1
Pulse Forward Current *
Reverse Voltage
Thermal Resistance
Junction Temperature
Operating Temperature
Storage Temperature
2
Soldering Temperature *
1
Symbol
P
D
I
F
I
FP
V
R
R
th
T
J
T
opr
T
stg
T
sol
Value
2500
800
3000
5
10
135
-40 … +125
-40 … +125
255
Unit
mW
mA
mA
V
K/W
°C
°C
°C
°C
(Unit: mm)
* duty = 1%, pulse width = 10 µs
2
* must be completed within 5 seconds
Electro-Optical Characteristics
Item
Forward Voltage
Pulsed Forward Current
Total Radiated Power
Radiant Intensity
Peak Wavelength
Half Width
Viewing Half Angle
Rise Time
Fall Time
Symbol
V
F
V
FP
P
O
I
E
λ
P
Δλ
Θ
1/2
t
r
t
f
Condition
I
F
= 800 mA
I
FP
= 3 A
I
F
= 800 mA
I
FP
= 3 A
I
F
= 800 mA
I
FP
= 3 A
I
F
= 100 mA
I
F
= 100 mA
I
F
= 100 mA
I
F
= 100 mA
I
F
= 100 mA
Min.
-
-
-
-
-
-
-
-
-
-
-
Typ.
2.0
3.5
330
1250
145
550
770
25
±62
80
80
Max.
2.5
5.5
-
-
-
-
-
-
-
-
-
Unit
V
V
mW
mW/sr
nm
nm
deg.
ns
ns
Total Radiated Power is measured by S3584-08
Radiant Intensity is measured by Tektronix J-6512
Notes: Do not view directly into the emitting area of the LED during operation!
The above specifications are for reference purpose only and subjected to change without prior notice.
23.02.2012
SMB1W-770R
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