DMN24H11DS
N-CHANNEL ENHANCEMENT MODE MOSFET
Product Summary
V
(BR)DSS
240V
R
DS(ON)
11Ω @ V
GS
= 10V
12Ω @ V
GS
= 4.5V
I
D
T
A
= +25°C
0.27A
0.26A
Features and Benefits
Low Gate Threshold Voltage
Low Input Capacitance
Fast Switching Speed
Small Surface Mount Package
Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
Qualified to AEC-Q101 Standards for High Reliability
ADVANCED INFORMATION
Description
This new generation MOSFET has been designed to minimize the
on-state resistance (R
DS(ON)
) and yet maintain superior switching
performance, making it ideal for high efficiency power management
applications.
Mechanical Data
Case: SOT23
Case Material: Molded Plastic. UL Flammability Classification
Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminals: Solderable per MIL-STD-202, Method 208
e3
Lead Free Plating (Matte Tin Finish annealed over Alloy 42
leadframe).
Terminal Connections: See Diagram
Weight: 0.006 grams (approximate)
Applications
DC-DC Converters
Power management functions
Battery Operated Systems and Solid-State Relays
Drivers: Relays, Solenoids, Lamps, Hammers, Displays,
Memories, Transistors, etc
D
D
G
G
S
Top View
Top View
Pin Configuration
S
Equivalent Circuit
Ordering Information
(Note 4)
Part Number
DMN24H11DS-7
DMN24H11DS-13
Notes:
Case
SOT23
SOT23
Packaging
3,000/Tape & Reel
10,000/Tape & Reel
1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. For packaging details, go to our website at http://www.diodes.com/products/packages.html.
Marking Information
4H1
4H1
4H1 = Product Type Marking Code
YM = Date Code Marking for SAT (Shanghai Assembly/ Test site)
YM = Date Code Marking for CAT (Chengdu Assembly/ Test site)
Y or Y = Year (ex: Y = 2011)
M = Month (ex: 9 = September)
Date Code Key
Year
Code
Month
Code
2011
Y
Jan
1
Feb
2
2012
Z
Mar
3
Apr
4
2013
A
May
5
Jun
6
2014
B
Jul
7
2015
C
Aug
8
Sep
9
2016
D
Oct
O
Nov
N
2017
E
Dec
D
April 2014
© Diodes Incorporated
DMN24H11DS
Document number: DS37092 Rev. 3 - 2
1 of 6
www.diodes.com
DMN24H11DS
Maximum Ratings
(@T
A
= +25°C, unless otherwise specified.)
Characteristic
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (Note 6) V
GS
= 10V
Steady
State
T
A
= +25°C
T
A
= +70°C
Symbol
V
DSS
V
GSS
I
D
I
DM
I
S
dv/dt
Value
240
±20
0.27
0.22
0.8
0.8
6.0
Units
V
V
A
A
A
V/ns
ADVANCED INFORMATION
Pulsed Drain Current (10μs pulse, duty cycle
≦1%)
Maximum Body Diode Continuous Current (Note 5)
Peak diode recovery dv/dt
Thermal Characteristics
(@T
A
= +25°C, unless otherwise specified.)
Characteristic
Total Power Dissipation
Thermal Resistance, Junction to Ambient
Thermal Resistance, Junction to Case
Operating and Storage Temperature Range
(Note 5)
(Note 6)
(Note 5)
(Note 6)
(Note 6)
Symbol
P
D
R
θJA
R
θJC
T
J,
T
STG
Value
0.75
1.2
166
104
35
-55 to +150
°C
Units
W
°C/W
Electrical Characteristics
(@T
A
= +25°C, unless otherwise specified.)
Characteristic
OFF CHARACTERISTICS (Note 7)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Body Leakage
ON CHARACTERISTICS (Note 7)
Gate Threshold Voltage
Static Drain-Source On-Resistance
Diode Forward Voltage
DYNAMIC CHARACTERISTICS (Note 8)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Reverse Recovery Time
Reverse Recovery Charge
Notes:
Symbol
BV
DSS
I
DSS
I
GSS
V
GS(th)
R
DS (ON)
V
SD
C
iss
C
oss
C
rss
R
G
Q
g
Q
gs
Q
gd
t
D(on)
t
r
t
D(off)
t
f
t
rr
Q
rr
Min
240
1.0
Typ
2.0
3.7
4.0
0.7
76.8
6.9
4.1
17
3.7
0.3
2.1
4.8
4.7
17.5
102.3
45.6
51.6
Max
100
±100
3.0
11
12
1.2
Unit
V
nA
nA
V
Ω
V
Test Condition
V
GS
= 0V, I
D
= 250µA
V
DS
= 240V, V
GS
= 0V
V
GS
= ±20V, V
DS
= 0V
V
DS
= V
GS
, I
D
= 250µA
V
GS
= 10V, I
D
= 0.3A
V
GS
= 4.5V, I
D
= 0.2A
V
GS
= 0V, I
S
= 0.1A
pF
Ω
nC
V
DS
= 25V, V
GS
= 0V,
f = 1.0MHz
V
DS
= 0V, V
GS
= 0V, f = 1.0MHz
V
DS
= 192V, V
GS
= 10V,
I
D
= 0.1A
nS
V
DS
= 120V, I
D
= 0.1A,
V
GS
= 10V, R
G
= 6.0Ω
nS
nC
V
R
= 100V, I
F
= 1.0A,
di/dt = 100A/µs
5. Device mounted on FR-4 PC board, with minimum recommended pad layout, single sided.
6. Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper pad layout
7 .Short duration pulse test used to minimize self-heating effect.
8. Guaranteed by design. Not subject to production testing.
DMN24H11DS
Document number: DS37092 Rev. 3 - 2
2 of 6
www.diodes.com
April 2014
© Diodes Incorporated
DMN24H11DS
0.5
V
GS
= 10V
V
GS
= 4.0V
V
GS
= 4.5V
0.3
V
DS
= 5.0V
0.4
I
D
, DRAIN CURRENT (A)
0.25
V
GS
= 3.5V
I
D
, DRAIN CURRENT (A)
0.2
0.3
ADVANCED INFORMATION
0.15
T
A
= 150°C
0.2
0.1
T
A
= 125°C
T
A
= 85°C
T
A
= 25°C
T
A
= -55°C
0.1
V
GS
= 3.0V
0.05
0
0.0
0
0.5
1.5 2 2.5 3 3.5 4 4.5
V
DS
, DRAIN-SOURCE VOLTAGE (V)
Figure 1 Typical Output Characteristics
1
5
0
0.5
1.5 2 2.5 3 3.5 4 4.5
V
GS
, GATE-SOURCE VOLTAGE (V)
Figure 2 Typical Transfer Characteristics
1
5
R
DS(ON)
, DRAIN-SOURCE ON-RESISTANCE (
)
R
DS(ON)
, DRAIN-SOURCE ON-RESISTANCE (
)
8
7.5
7
6.5
6
5.5
5
4.5
4
3.5
3
2.5
2
0
0.1
0.2
0.3
0.4
0.5
I
D
, DRAIN-SOURCE CURRENT (A)
Figure 3 Typical On-Resistance vs.
Drain Current and Gate Voltage
0.6
V
GS
= 10V
V
GS
= 4.5V
15
14
13
12
11
10
9
8
7
6
5
4
3
2
1
0
0
4
8
12
16
V
GS
, GATE-SOURCE VOLTAGE (V)
Figure 4 Typical Transfer Characteristics
20
I
D
= 200mA
I
D
= 300mA
R
DS(ON)
, DRAIN-SOURCE ON-RESISTANCE (
)
16
V
GS
= 4.5V
3
T
A
= 150°C
R
DS(ON)
, DRAIN-SOURCE
ON-RESISTANCE (NORMALIZED)
14
12
T
A
= 125°C
2.5
V
GS
= 10 V
I
D
= 400mA
10
T
A
= 85°C
2
V
GS
= 5.0 V
I
D
= 200mA
8
6
4
T
A
= -55°C
T
A
= 25°C
1.5
1
2
0
0
0.1
0.2
0.3
0.4
0.5
0.5
0
-50
I
D
, DRAIN CURRENT (A)
Figure 5 Typical On-Resistance vs.
Drain Current and Temperature
-25
0
25
50
75 100 125 150
T
J
, JUNCTION TEMPERATURE (
C)
Figure 6 On-Resistance Variation with Temperature
DMN24H11DS
Document number: DS37092 Rev. 3 - 2
3 of 6
www.diodes.com
April 2014
© Diodes Incorporated
DMN24H11DS
15
R
DS(ON)
, DRAIN-SOURCE ON-RESISTANCE (
)
V
GS(th)
, GATE THRESHOLD VOLTAGE (V)
3
2.8
2.6
2.4
2.2
2
1.8
1.6
1.4
1.2
-25
0
25
50
75 100 125 150
T
J
, JUNCTION TEMPERATURE (
C)
Figure 8 Gate Threshold Variation vs. Ambient Temperature
1
-50
I
D
= 250µA
I
D
= 1mA
12
V
GS
= 10V
I
D
= 400mA
9
V
GS
= 5.0V
I
D
= 200mA
ADVANCED INFORMATION
6
3
0
-50
-25
0
25
50
75 100 125 150
T
J
, JUNCTION TEMPERATURE (
C)
Figure 7 On-Resistance Variation with Temperature
0.5
1000
C
T
, JUNCTION CAPACITANCE (pF)
I
S
, SOURCE CURRENT (A)
0.4
100
C
iss
0.3
T
A
= 150°C
T
A
= 125°C
0.2
T
A
= 85°C
T
A
= 25°C
10
C
oss
0.1
T
A
= -55°C
C
rss
0
0
0.3
0.6
0.9
1.2
1.5
V
SD
, SOURCE-DRAIN VOLTAGE (V)
Figure 9 Diode Forward Voltage vs. Current
1
0
5
10
15
20
25
30
35
V
DS
, DRAIN-SOURCE VOLTAGE (V)
Figure 10 Typical Junction Capacitance
40
10
V
GS
GATE THRESHOLD VOLTAGE (V)
1
R
DS(on)
Limited
8
I
D
, DRAIN CURRENT (A)
0.1
DC
P
W
= 10s
P
W
= 1s
P
W
= 100ms
6
4
V
DS
= 192V
I
D
= 0.1A
0.01
T
J(max)
= 150°C
T
A
= 25°C
V
GS
= 10V
Single Pulse
DUT on 1 * MRP Board
P
W
= 10ms
P
W
= 1ms
P
W
= 100µs
2
0
0
0.5
1
1.5
2
2.5
3
3.5
Q
g
, TOTAL GATE CHARGE (nC)
Figure 11 Gate Charge
4
0.001
0.1
1
10
100
V
DS
, DRAIN-SOURCE VOLTAGE (V)
Figure 12 SOA, Safe Operation Area
1000
DMN24H11DS
Document number: DS37092 Rev. 3 - 2
4 of 6
www.diodes.com
April 2014
© Diodes Incorporated
DMN24H11DS
1
D = 0.9
D = 0.7
D = 0.5
r(t), TRANSIENT THERMAL RESISTANCE
0.1
ADVANCED INFORMATION
0.01
R
JA
(t) = r(t) * R
JA
R
JA
= 164°C/W
Duty Cycle, D = t1/ t2
0.001
0.00001
0.0001
0.001
0.01
0.1
1
t1, PULSE DURATION TIME (sec)
Figure 13 Transient Thermal Resistance
10
100
1000
Package Outline Dimensions
Please see AP02002 at http://www.diodes.com/datasheets/ap02002.pdf for latest version.
A ll 7 °
H
J
K
K 1
a
A
M
L
L 1
C
B
D
SOT23
Dim
Min
Max
Typ
A
0.37
0.51
0.40
B
1.20
1.40
1.30
C
2.30
2.50
2.40
D
0.89
1.03 0.915
F
0.45
0.60 0.535
G
1.78
2.05
1.83
H
2.80
3.00
2.90
J
0.013 0.10
0.05
K
0.890 1.00 0.975
K1
0.903 1.10 1.025
L
0.45
0.61
0.55
L1
0.25
0.55
0.40
M
0.085 0.150 0.110
a
8°
All Dimensions in mm
Suggested Pad Layout
Please see AP02001 at http://www.diodes.com/datasheets/ap02001.pdf for latest version.
Y
Z
C
Dimensions Value (in mm)
Z
2.9
X
0.8
Y
0.9
C
2.0
E
1.35
X
E
DMN24H11DS
Document number: DS37092 Rev. 3 - 2
5 of 6
www.diodes.com
April 2014
© Diodes Incorporated
京公网安备 11010802033920号
EEWORLD
