DMN24H3D5L
N-CHANNEL ENHANCEMENT MODE MOSFET
Product Summary
ADVANCED PRODUCT
NEW INFORMATION
V
(BR)DSS
240V
R
DS(ON)
3.5 @ V
GS
= 10V
3.5 @ V
GS
= 4.5V
6.0 @ V
GS
= 3.3V
I
D
T
A
= +25°
C
0.48A
0.48A
0.37A
Features and Benefits
•
•
•
•
•
•
Low Gate Threshold Voltage
Low Input Capacitance
Fast Switching Speed
Small Surface Mount Package
Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
Description
This new generation MOSFET is designed to minimize the on-state
resistance (R
DS(ON)
) and yet maintain superior switching
performance, making it ideal for high efficiency power management
applications.
Mechanical Data
•
•
•
•
•
•
•
Case: SOT23
Case Material: Molded Plastic; UL Flammability Classification
Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminals: Solderable per MIL-STD-202, Method 208
e3
Lead-Free Plating (Matte Tin Finish Annealed over Alloy 42
Leadframe).
Terminal Connections: See Diagram
Weight: 0.008 grams (Approximate)
Applications
•
•
•
•
DC-DC Converters
Power Management Functions
Battery Operated Systems and Solid-State Relays
Drivers: Relays, Solenoids, Lamps, Hammers, Displays,
Memories, Transistors, etc.
SOT23
D
D
G
G
S
S
Top View
Top View
Pin Configuration
Equivalent Circuit
Ordering Information
(Note 4)
Part Number
DMN24H3D5L-7
DMN24H3D5L-13
Notes:
Case
SOT23
SOT23
Packaging
3,000/Tape & Reel
10,000/Tape & Reel
1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. For packaging details, go to our website at http://www.diodes.com/products/packages.html.
Marking Information
SOT23
2H4 = Product Type Marking Code
YM = Date Code Marking
Y or Y = Year (ex: C = 2015)
M = Month (ex: 9 = September)
2H4
Date Code Key
Year
Code
Month
Code
2015
C
Jan
1
Feb
2
2016
D
Mar
3
2017
E
Apr
4
May
5
2018
F
Jun
6
2019
G
Jul
7
Aug
8
2020
H
Sep
9
2021
I
Oct
O
Nov
N
2022
J
Dec
D
January 2015
© Diodes Incorporated
DMN24H3D5L
Document number: DS37270 Rev. 3 - 2
1 of 6
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DMN24H3D5L
Maximum Ratings
(@T
A
= +25°C, unless otherwise specified.)
ADVANCED PRODUCT
NEW INFORMATION
Characteristic
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (Note 6) V
GS
= 10V
Pulsed Drain Current (10µs pulse, duty cycle
≤
1%)
Maximum Body Diode Continuous Current (Note 6)
Steady
State
T
A
= +25°
C
T
A
= +70°
C
Symbol
V
DSS
V
GSS
I
D
I
DM
I
S
Value
240
±20
0.48
0.39
1.9
1.5
Units
V
V
A
A
A
Thermal Characteristics
(@T
A
= +25°C, unless otherwise specified.)
Characteristic
Total Power Dissipation
Thermal Resistance, Junction to Ambient
Thermal Resistance, Junction to Case
Operating and Storage Temperature Range
(Note 5)
(Note 6)
(Note 5)
(Note 6)
(Note 6)
Symbol
P
D
R
θ
JA
R
θ
JC
T
J,
T
STG
Value
0.76
1.26
163
99
31
-55 to 150
°
C
Units
W
°
C/W
Electrical Characteristics
(@T
A
= +25°C, unless otherwise specified.)
Characteristic
OFF CHARACTERISTICS (Note 7)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Body Leakage
ON CHARACTERISTICS (Note 7)
Gate Threshold Voltage
Static Drain-Source On-Resistance
Diode Forward Voltage
DYNAMIC CHARACTERISTICS (Note 8)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Notes:
Symbol
BV
DSS
I
DSS
I
GSS
V
GS(th)
R
DS(ON)
V
SD
C
iss
C
oss
C
rss
R
g
Q
g
Q
gs
Q
gd
t
D(on)
t
r
t
D(off)
t
f
Min
240
1.0
Typ
1.95
1.5
1.5
1.7
0.7
188
11
8
3.86
6.6
0.8
2.1
2.3
2.0
21
7.2
Max
1.0
±100
2.5
3.5
3.5
6.0
1.2
Unit
V
µA
nA
V
Test Condition
V
GS
= 0V, I
D
= 250µA
V
DS
= 192V, V
GS
= 0V
V
GS
= ±20V, V
DS
= 0V
V
DS
= V
GS
, I
D
= 250µA
V
GS
= 10V, I
D
= 0.3A
V
GS
= 4.5V, I
D
= 0.2A
V
GS
= 3.3V, I
D
= 0.1A
V
V
GS
= 0V, I
S
= 0.3A
pF
V
DS
= 25V, V
GS
= 0V,
f = 1.0MHz
VDS = 0V, VGS = 0V, f = 1.0MHz
nC
V
DS
= 192V, V
GS
= 10V,
I
D
= 0.5A
nS
V
DS
= 60V, R
L
=200
V
GS
= 10V, R
G
= 25
5. Device mounted on FR-4 PC board, with minimum recommended pad layout, single sided.
6. Device mounted on FR-4 substrate PC board, 2oz copper, with 1-inch square copper pad layout
7 .Short duration pulse test used to minimize self-heating effect.
8. Guaranteed by design. Not subject to production testing.
DMN24H3D5L
Document number: DS37270 Rev. 3 - 2
2 of 6
www.diodes.com
January 2015
© Diodes Incorporated
DMN24H3D5L
1.0
V
GS
= 10V
V
GS
= 4.0V
V
GS
= 4.5V
1
V
DS
= 10V
0.8
0.8
I
D
, DRAIN CURRENT (A)
V
GS
= 3.5V
V
GS
= 3.0V
ADVANCED PRODUCT
NEW INFORMATION
I
D
, DRAIN CURRENT (A)
0.6
V
GS
= 3.3V
0.6
0.4
0.4
T
A
= 150°
C
T
A
= 125°
C
T
A
= 85°
C
T
A
= 25°
C
T
A
= -55°
C
0.2
V
GS
= 2.7V
0.2
V
GS
= 2.5V
0.0
0
1
2
3
4
V
DS
, DRAIN-SOURCE VOLTAGE (V)
Figure 1 Typical Output Characteristics
5
0
1
1.5
2
2.5
3
3.5
V
GS
, GATE-SOURCE VOLTAGE (V)
Figure 2 Typical Transfer Characteristics
T
A
= 150°
C
T
A
= 125°
C
4
R
DS(ON)
, DRAIN-SOURCE ON-RESISTANCE (
Ω
)
R
DS(ON)
, DRAIN-SOURCE ON-RESISTANCE (
Ω
)
2.4
4
V
GS
= 10V
2.2
V
GS
= 3.3V
3.5
3
2.5
2
1.5
1
T
A
= 85°
C
2
1.8
1.6
V
GS
= 4.5V
V
GS
= 10V
T
A
= 25°
C
1.4
T
A
= -55°
C
1.2
0
0.2
0.4
0.6
0.8
I
D
, DRAIN-SOURCE CURRENT (A)
Figure 3 Typical On-Resistance vs.
Drain Current and Gate Voltage
1
0.5
0
0.4
0.6
0.8
I
D
, DRAIN CURRENT (A)
Figure 4 Typical On-Resistance vs.
Drain Current and Temperature
0.2
1
2.4
R
DS(ON)
, DRAIN-SOURCE
ON-RESISTANCE (NORMALIZED)
2.2
2
1.8
1.6
1.4
1.2
1
0.8
0.6
0.4
R
DS(ON)
, DRAIN-SOURCE ON-RESISTANCE (
Ω
)
2.6
V
GS
= 10V
I
D
= 0.3A
3.8
3.4
3
2.6
2.2
1.8
1.4
1
0.6
-50
V
GS
= 10V
I
D
= 0.3A
V
GS
= 4.5V
I
D
= 0.2A
V
GS
= 4.5V
I
D
= 0.2A
T
J
, JUNCTION TEMPERATURE (
°
C)
Figure 5 On-Resistance Variation with Temperature
-25
0
25
50
75 100 125 150
T
J
, JUNCTION TEMPERATURE (
°
C)
Figure 6 On-Resistance Variation with Temperature
DMN24H3D5L
Document number: DS37270 Rev. 3 - 2
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January 2015
© Diodes Incorporated
DMN24H3D5L
2.5
V
GS(th)
, GATE THRESHOLD VOLTAGE (V)
1
2.2
I
D
= 1mA
0.8
I
S
, SOURCE CURRENT (A)
ADVANCED PRODUCT
NEW INFORMATION
1.9
I
D
= 250µA
0.6
T
A
= 150°
C
T
A
= 25°
C
1.6
0.4
T
A
= 125°
C
T
A
= 85°
C
1.3
0.2
T
A
= -55°
C
-25
0
25
50
75 100 125 150
T
J
, JUNCTION TEMPERATURE (
°
C)
Figure 7 Gate Threshold Variation vs. Ambient Temperature
1000
V
GS
GATE THRESHOLD VOLTAGE (V)
f = 1MHz
1
-50
0
0
0.2
0.4
0.6
0.8
1
1.2
V
SD
, SOURCE-DRAIN VOLTAGE (V)
Figure 8 Diode Forward Voltage vs. Current
10
C
T
, JUNCTION CAPACITANCE (pF)
C
iss
8
100
6
V
DS
= 192V
I
D
= 0.5A
C
oss
4
10
C
rss
2
1
0
5
10
15
20
25
30
35
V
DS
, DRAIN-SOURCE VOLTAGE (V)
Figure 9 Typical Junction Capacitance
40
0
0
1
2
3
4
5
6
Q
g
, TOTAL GATE CHARGE (nC)
Figure 10 Gate Charge
7
10
R
DS(on)
Limited
I
D
, DRAIN CURRENT (A)
1
DC
0.1
P
W
= 10s
P
W
= 1s
P
W
= 100ms
P
W
= 10ms
0.01
0.001
0.1
T
J(max)
= 150°
C
T
A
= 25°
C
V
GS
= 10V
Single Pulse
DUT on 1 * MRP Board
P
W
= 1ms
P
W
= 100µs
1
10
100
V
DS
, DRAIN-SOURCE VOLTAGE (V)
Figure 11 SOA, Safe Operation Area
1000
DMN24H3D5L
Document number: DS37270 Rev. 3 - 2
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January 2015
© Diodes Incorporated
DMN24H3D5L
1
D = 0.9
D = 0.7
D = 0.5
r(t), TRANSIENT THERMAL RESISTANCE
ADVANCED PRODUCT
NEW INFORMATION
D = 0.3
0.1
D = 0.1
D = 0.05
D = 0.02
0.01
D = 0.01
D = 0.005
D = Single Pulse
R
θ
JA
(t) = r(t) * R
θ
JA
R
θ
JA
= 163°
C/W
Duty Cycle, D = t1/ t2
0.001
0.01
0.1
1
t1, PULSE DURATION TIME (sec)
Figure 12 Transient Thermal Resistance
10
100
1000
0.001
0.00001
0.0001
Package Outline Dimensions
Please see AP02002 at http://www.diodes.com/datasheets/ap02002.pdf for the latest version.
°7 llA
C
X
E
Suggested Pad Layout
Please see AP02001 at http://www.diodes.com/datasheets/ap02001.pdf for the latest version.
Dimensions
Z
X
Y
C
E
Value (in mm)
2.9
0.8
0.9
2.0
1.35
Y
Z
DMN24H3D5L
Document number: DS37270 Rev. 3 - 2
5 of 6
www.diodes.com
1L
52.0
ENALP EGUAG
a
L
M
J
D
G
A
F
B
H
K
C
1K
SOT23
Dim
Min
Max
Typ
A
0.37
0.51
0.40
B
1.20
1.40
1.30
C
2.30
2.50
2.40
D
0.89
1.03 0.915
F
0.45
0.60 0.535
G
1.78
2.05
1.83
H
2.80
3.00
2.90
J
0.013 0.10
0.05
K
0.890 1.00 0.975
K1
0.903 1.10 1.025
L
0.45
0.61
0.55
L1
0.25
0.55
0.40
M
0.085 0.150 0.110
a
8°
All Dimensions in mm
January 2015
© Diodes Incorporated
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