Green
Product
STU437S
STD437S
Ver 1.0
S a mHop Microelectronics C orp.
P-Channel Logic Level Enhancement Mode Field Effect Transistor
PRODUCT SUMMARY
V
DSS
-40V
I
D
-32A
R
DS(ON)
(m
Ω
) Max
16
@
VGS=-10V
30
@
VGS=-4.5V
FEATURES
Super high dense cell design for low R
DS(ON)
.
Rugged and reliable.
Suface Mount Package.
G
S
G
D
S
STU SERIES
TO - 252AA( D - PAK )
STD SERIES
TO - 251 ( I - PAK )
ABSOLUTE MAXIMUM RATINGS (
T
C
=25
°
C unless otherwise noted
)
Symbol
Parameter
V
DS
V
GS
I
D
I
DM
E
AS
P
D
T
J,
T
STG
Drain-Source Voltage
Gate-Source Voltage
Drain Current-Continuous
a e
Limit
-40
±20
-32
-25.6
-94
121
Units
V
V
A
A
A
mJ
W
W
°C
T
C
=25°C
T
C
=70°C
d
-Pulsed
b
Sigle Pulse Avalanche Energy
Maximum Power Dissipation
T
C
=25°C
T
C
=70°C
42
27
-55 to 150
Operating Junction and Storage
Temperature Range
THERMAL CHARACTERISTICS
R
JC
Thermal Resistance, Junction-to-Case
R
JA
Thermal Resistance, Junction-to-Ambient
3
50
°C/W
°C/W
Details are subject to change without notice.
Sep,09,2013
1
www.samhop.com.tw
STU437S
STD437S
Ver 1.0
ELECTRICAL CHARACTERISTICS
(
T
C
=25
°
C unless otherwise noted
)
Symbol
Parameter
Conditions
V
GS
=0V , I
D
=-250uA
V
DS
=-32V , V
GS
=0V
Min
Typ
Max
Units
V
uA
nA
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
BV
DSS
Zero Gate Voltage Drain Current
I
DSS
Gate-Body Leakage Current
I
GSS
ON CHARACTERISTICS
Gate Threshold Voltage
V
GS(th)
R
DS(ON)
g
FS
Drain-Source On-State Resistance
Forward Transconductance
c
-40
1
±100
V
GS
= ±20V , V
DS
=0V
V
DS
=V
GS
, I
D
=-250uA
V
GS
=-10V , I
D
=-16A
V
GS
=-4.5V , I
D
=-12A
V
DS
=-10V , I
D
=-16A
-1
-1.9
13
22
32
-3
16
30
V
m ohm
m ohm
S
DYNAMIC CHARACTERISTICS
Input Capacitance
C
ISS
Output Capacitance
C
OSS
Reverse Transfer Capacitance
C
RSS
SWITCHING CHARACTERISTICS
t
D(ON)
Turn-On Delay Time
tr
Rise Time
t
D(OFF)
Turn-Off Delay Time
tf
Fall Time
Q
g
Q
gs
Q
gd
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
c
V
DS
=-20V,V
GS
=0V
f=1.0MHz
2200
244
180
pF
pF
pF
V
DD
=-20V
I
D
=-1.0A
V
GS
=-10V
R
GEN
= 6 ohm
V
DS
=-20V,I
D
=-16A,V
GS
=-10V
V
DS
=-20V,I
D
=-16A,
V
GS
=-10V
36
32
109
28
37
4.3
12
-0.8
ns
ns
ns
ns
nC
nC
nC
DRAIN-SOURCE DIODE CHARACTERISTICS
V
SD
Diode Forward Voltage
V
GS
=0V,I
S
= -4A
-1.3
V
Notes
_
a.Surface Mounted on FR4 Board,t < 10sec.
_
_
b.Pulse Test:Pulse Width < 300us, Duty Cycle < 2%.
c.Guaranteed by design, not subject to production testing.
d.Starting T
J
=25
°
C,L=0.5mH,V
DD
= 20V .(See Figure13)
e.Drain current limited by maximum junction temperature.
Sep,09,2013
2
www.samhop.com.tw
STU437S
STD437S
Ver 1.0
40
V
G S
=-10V
30
V
G S
=-4V
V
G S
=-4.5V
-I
D
, Drain Current(A)
24
-I
D
, Drain Current(A)
32
24
18
16
V
G S
=-3.5V
12
T j=125 C
6
25 C
0
-55 C
2.4
3.2
4.0
4.8
8
V
G S
=-3V
0
0
0.5
1.0
1.5
2.0
2.5
3.0
0
0.8
1.6
-V
DS
, Drain-to-Source Voltage(V)
-V
GS
, Gate-to-Source Voltage(V)
Figure 1. Output Characteristics
48
40
Figure 2. Transfer Characteristics
1.5
1.4
V
G S
=-10V
I
D
=-16A
R
DS(on)
, On-Resistance
Normalized
R
DS(on)
(m
Ω
)
32
V
G S
=-4.5V
24
16
8
1
1
8
16
24
32
40
V
G S
=-10V
1.3
1.2
1.1
1.0
0
0
25
50
75
100
125
150
T j( C )
V
G S
=-4.5V
I
D
=-12A
-I
D
, Drain Current(A)
Tj, Junction Temperature(° C )
Figure 3. On-Resistance vs. Drain Current
and Gate Voltage
1.6
Figure 4. On-Resistance Variation with Drain
Current and Temperature
BVDSS, Normalized
Drain-Source Breakdown Voltage
1.15
1.10
1.05
1.00
0.95
0.90
0.85
-50
0
25
50
I
D
=-250uA
Vth, Normalized
Gate-Source Threshold Voltage
1.4
1.2
1.0
0.8
0.6
0.4
0.2
-50
-25
0
25
50
V
DS
=V
G S
I
D
=-250uA
75 100 125 150
-25
75 100 125 150
Tj, Junction Temperature( ° C )
Tj, Junction Temperature(° C )
Figure 5. Gate Threshold Variation
with Temperature
Figure 6. Breakdown Voltage Variation
with Temperature
Sep,09,2013
3
www.samhop.com.tw
STU437S
STD437S
Ver 1.0
60
50
20
-Is, Source-drain current(A)
I
D
=-16A
10
125 C
R
DS(on)
(m
Ω
)
40
30
125 C
20
10
0
75 C
25 C
75 C
25 C
0
2
4
6
8
10
1
0
0.3
0.6
0.9
1.2
1.5
-V
GS
, Gate-to-Source Voltage(V)
-V
SD
, Body Diode Forward Voltage(V)
Figure 7. On-Resistance vs.
Gate-Source Voltage
3000
Figure 8. Body Diode Forward Voltage
Variation with Source Current
10
-V
GS
, Gate to Source Voltage(V)
2500
C, Capacitance(pF)
8
6
4
2
0
2000
1500
1000
Cos s
500
0
0
C rs s
5
C is s
V
DS
= -20V
I
D
=-16A
10
15
20
25
30
0
5
10
15
20
25
30
35
40
-V
DS
, Drain-to-Source Voltage(V)
Qg, Total Gate Charge(nC)
Figure 9. Capacitance
Figure 10. Gate Charge
1000
100
im
it
1m
s
-I
D
, Drain Current(A)
TD(off )
Switching Time(ns)
100
TD(on)
R
DS
(O
L
N)
10
0u
s
Tr
10
10
DC
ms
Tf
10
VDS=-20V,ID=-1A
VGS=-10V
1
1
1
10
100
V
GS
=-10V
Single Pulse
T
C
=25 C
1
10
100
0.2
0.1
Rg, Gate Resistance(
Ω
)
-V
DS
, Drain-Source Voltage(V)
Figure 11. switching characteristics
Figure 12. Maximum Safe Operating Area
Sep,09,2013
4
www.samhop.com.tw
STU437S
STD437S
Ver 1.0
V
( BR )D S S
tp
L
V
DS
R
G
20V
D.U.T
I
AS
t
p
0.01
+
-
V
DD
I
AS
Uncamped Inductive Test Circuit
Figure 13a.
Unclamped Inductive Waveforms
F igure 13b.
2
1
D=0.5
Normalized Transient
Thermal Resistance
0.2
0.1
0.1
P
DM
0.05
0.02
0.01
S ING LE P ULS E
0.01
10
-5
-4
-3
-2
-1
t
1
t
2
1.
2.
3.
4.
10
10
10
R
J C
(t)=r (t) * R
J C
R
J C
=S ee Datas heet
T
J M-
T
C
= P
DM
* R
J C
(t)
Duty C ycle, D=t
1
/t
2
1
10
10
Square Wave Pulse Duration(sec)
Figure 14. Normalized Thermal Transient Impedance Curve
Sep,09,2013
5
www.samhop.com.tw
京公网安备 11010802033920号
EEWORLD
