SOT23 NPN SILICON PLANAR
DARLINGTON TRANSISTORS
ISSUE 3 SEPTEMBER 1995
7
FEATURES
* High V
CEO
* Low saturation voltage
COMPLEMENTARY TYPES BCV27 BCV28
BCV47 BCV48
PARTMARKING DETAILS
BCV27 ZFF
BCV47 ZFG
SYMBOL
V
CBO
V
CEO
V
EBO
I
CM
I
C
I
B
P
tot
T
j
:T
stg
BCV47
MIN. MAX.
80
60
10
100
10
I
EBO
V
CE(sat)
V
BE(sat)
h
FE
100
1.0
1.5
4K
10K
20K
4K
170 Typical
3.5 Typical
100
10
100
1.0
1.5
2K
4K
10K
2K
170 Typical
3.5 Typical
BCV27
40
30
10
800
500
100
330
-55 to +150
UNIT
V
V
V
nA
nA
µ
A
µ
A
nA
V
V
BCV27
BCV47
C
B
SOT23
BCV47
80
60
UNIT
V
V
V
mA
mA
mA
mW
°C
E
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Peak Pulse Current
Continuous Collector Current
Base Current
Power Dissipation at T
amb
=25°C
Operating and Storage Temperature Range
PARAMETER
SYMBOL
ELECTRICAL CHARACTERISTICS (at T
amb
= 25°C unless otherwise stated).
Collector-Base
Breakdown Voltage
Collector-Emitter
Breakdown Voltage
Emitter-Base
Breakdown Voltage
Collector Cut-Off
Current
Emitter Base
Cut-Off Current
Collector-Emitter
Saturation Voltage
Base-Emitter
Saturation Voltage
Static Forward Current
Transfer Ratio
Transition Frequency
Output Capacitance
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CBO
BCV27
MIN. MAX.
40
30
10
CONDITIONS.
I
C
=100
µ
A
I
C
=10mA*
I
E
=10
µ
A
V
CB
= 30V
V
CB
= 60V
V
CB
=30V,T
amb
=150
o
C
V
CB
=60V,T
amb
=150
o
C
V
EB
=4V
I
C
=100mA,I
B
=0.1mA*
I
C
=100mA,I
B
=0.1mA*
I
C
=100
µ
A, V
CE
=1V
I
C
=10mA, V
CE
=5V*
I
C
=100mA, V
CE
=5V*
I
C
=500mA, V
CE
=5V*
I
C
=50mA, V
CE
=5V
f = 20MHz
V
CB
=10V, f=1MHz
f
T
C
obo
MHz
pF
*Measured under pulsed conditions. Pulse width=300
µ
s. Duty cycle
≤
2%
Periodic Sample Test Only.
For typical graphs see FMMT38A datasheet
3 - 22
Microcontroller MCU
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