UGF1004GD thru UGF1008GD
®
UGF1004GD thru UGF1008GD
Pb Free Plating Product
Pb
10 Ampere Insulated Tandem Polarity Ultra Fast Recovery Half Bridge Rectifiers
Features
Latest GPP technology with ultra fast recovery time
Low forward voltage drop
High current capability
Low reverse leakage current
High surge current capability
Application
ITO-220AB
Unit:mm
Automotive Inverters and Solar Inverters
Plating Power Supply,SMPS and UPS
Car Audio Amplifiers and Sound Device Systems
Mechanical Data
Case: Fully Insulated TO-220FP FullPak Plastic
Epoxy: UL 94V-0 rate flame retardant
Terminals: Solderable per MIL-STD-202
method 208
Polarity: As marked on diode body
Mounting position: Any
Weight: 2.0 gram approximately
Case
Case
Case
Case
Negative
Positive
Common Cathode Common Anode
Suffix "G"
Suffix "GA"
Doubler
Series Connection
Tandem Polarity Tandem Polarity
Suffix "GD"
Suffix "GS"
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Rating at 25
C
ambient temperature unless otherwise specified.
Single phase, half wave, 60Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
(T
A
=25℃ unless otherwise noted)
PARAMETER
Maximum repetitive peak reverse voltage
Maximum RMS voltage
Maximum DC blocking voltage
Maximum average forward rectified current
Peak forward surge current, 8.3 ms single half sine-wave
superimposed on rated load
Maximum instantaneous forward voltage (Note 2)
I
F
= 5 A
Maximum reverse current @ rated VR
Maximum reverse recovery time (Note 2)
Typical thermal resistance
Operating junction temperature range
Storage temperature range
Note 1: Pulse Test with PW=300μs, 1% Duty Cycle
Note 2: Reverse Recovery Test Conditions: I
F
=0.5A, I
R
=1.0A, I
RR
=0.25A
T
J
=25
℃
T
J
=125
℃
SYMBOL
UGF1004GD UGF1005GD UGF1006GD UGF1007GD UGF1008GD
UNIT
V
RRM
V
RMS
V
DC
I
F(AV)
I
FSM
V
F
I
R
Trr
R
θJC
T
J
T
STG
- 55 to +175
- 55 to +175
20
6.0
- 55 to +150
- 55 to +150
0.95
1.25
10
100
25
o
o
200
140
200
300
210
300
400
280
400
10
70
500
350
500
600
420
600
V
V
V
A
A
1.70
V
μA
ns
C
/W
o
o
C
C
Rev.05
© 2006 Thinki Semiconductor Co., Ltd.
Page 1/2
http://www.thinkisemi.com/
UGF1004GD thru UGF1008GD
®
RATINGS AND CHARACTERISTICS CURVES
(TA=25℃ unless otherwise noted)
FIG.1 FORWARD CURRENT DERATING CURVE
12
10
INSTANTANEOUS REVERSE CURRENT
(μA)
FIG. 2 TYPICAL REVERSE CHARACTERISTICS
UGF1004GD-UGF1006GD
10
AVERAGE FORWARD
A
CURRENT (A)
TJ=125℃
1
8
6
4
2
0
0
25
50
75
100
125
(
o
C)
UGF1007GD-UGF1008GD
0.1
RESISTIVE OR
INDUCTIVE LOAD
WITH HEATSINK
150
175
0.01
TJ=25℃
0.001
0
20
40
60
80
100
120
140
PERCENT OF RATED PEAK REVERSE VOLTAGE (%)
CASE TEMPERATURE
PEAK FORWARD SURGE CURRENT
(A)
FIG. 3 MAXIMUM NON-REPETITIVE FORWARD
SURGE CURRENT
100
80
60
40
20
0
1
10
100
FIG. 4 TYPICAL FORWARD CHARACTERISTICS
100
INSTANTANEOUS FORWARD CURRENT (A)
10
TJ=125℃
8.3ms Single Half Sine Wave
JEDEC Method
1
TJ=25℃
NUMBER OF CYCLES AT 60 Hz
UGF1004GD
UGF1005GD-UGF1006GD
UGF1007GD-UGF1008GD
0.1
0
0.2
0.4
0.6
0.8
1
1.2
1.4
1.6
1.8
FORWARD VOLTAGE (V)
FIG. 5 TYPICAL JUNCTION CAPACITANCE
1000
f=1.0MHz
Vsig=50mVp-p
CAPACITANCE (pF)
100
10
0.1
1
10
100
REVERSE VOLTAGE (V)
Rev.05
© 2006 Thinki Semiconductor Co., Ltd.
Page 2/2
http://www.thinkisemi.com/
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