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STG8810A

Description
Super high dense cell design for low RDS(ON).
File Size129KB,8 Pages
ManufacturerSAMHOP
Websitehttp://www.samhop.com.tw
Download Datasheet View All

STG8810A Overview

Super high dense cell design for low RDS(ON).

Green
Product
STG8810A
Ver 1.3
S a mHop Microelectronics C orp.
Dual N-Channel Enhancement Mode Field Effect Transistor
PRODUCT SUMMARY
V
DSS
I
D
R
DS(ON)
(m
Ω
) Max
14.5
@
VGS=4.5V
15.0
@
VGS=4.0V
20V
7A
17.0
@
VGS=3.7V
19.5
@
VGS=3.1V
23.0
@
VGS=2.5V
FEATURES
Super high dense cell design for low R
DS(ON)
.
Rugged and reliable.
Suface Mount Package.
ESD HBM > 2KV.
T S S OP
D
1
/D
2
S
1
S
1
G
1
1
2
3
4
8
7
6
5
D
1
/D
2
S
2
S
2
G
2
D
1
D
2
G
1
G
2
(T OP V IE W)
S
1
S
2
ABSOLUTE MAXIMUM RATINGS (
T
A
=25
°
C unless otherwise noted
)
Symbol
V
DS
V
GS
I
D
I
DM
P
D
T
J,
T
STG
Parameter
Drain-Source Voltage
Gate-Source Voltage
Drain Current-Continuous
-Pulsed
b
a
Limit
20
±12
T
A
=25°C
T
A
=70°C
T
A
=25°C
T
A
=70°C
7.0
5.6
80
a
Units
V
V
A
A
A
W
W
°C
Maximum Power Dissipation
2.0
1.28
-55 to 150
Operating Junction and Storage
Temperature Range
THERMAL CHARACTERISTICS
R
JA
Thermal Resistance, Junction-to-Ambient
a
62.5
°C/W
Details are subject to change without notice.
Jul,02,2014
1
www.samhop.com.tw
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