CMSD6001_15 datasheet, PDF - EEWORLD Datasheet

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CMSD6001_15: DescriptionSURFACE MOUNT ULTRA LOW LEAKAGE SILICON SWITCHING DIODES; File Size663KB，2 Pages; ManufacturerCentral Semiconductor

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CMSD6001_15 Overview

SURFACE MOUNT ULTRA LOW LEAKAGE SILICON SWITCHING DIODES

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CMSD6001

CMSD6001A

CMSD6001C

CMSD6001S

SURFACE MOUNT

ULTRA LOW LEAKAGE

SILICON SWITCHING DIODES

w w w. c e n t r a l s e m i . c o m

DESCRIPTION:

The CENTRAL SEMICONDUCTOR CMSD6001

SERIES are silicon switching diodes manufactured

by the epitaxial planar process, epoxy molded in a

SUPERmini™ surface mount package, designed for

switching applications requiring an extremely low

leakage diode.

SOT-323 CASE

•

Device is

Halogen Free

by design

CMSD6001:

CMSD6001A:

CMSD6001C:

CMSD6001S:

SINGLE

DUAL, COMMON ANODE

DUAL, COMMON CATHODE

DUAL, IN-SERIES

MARKING

SYMBOL

VRRM

IFRM

IFSM

TJ, Tstg

CODE:

6C1

61A

61C

61S

100

250

4.0

1.0

275

-65 to +150

455

UNITS

°C

°C/W

MAXIMUM RATINGS:

(TA=25°C)

Continuous Reverse Voltage

Peak Repetitive Reverse Voltage

Continuous Forward Current

Peak Repetitive Forward Current

Peak Forward Surge Current, tp=1.0μs

Peak Forward Surge Current, tp=1.0s

Power Dissipation

Operating and Storage Junction Temperature

Thermal Resistance

ELECTRICAL CHARACTERISTICS PER DIODE:

(TA=25°C unless otherwise noted)

SYMBOL

TEST CONDITIONS

MIN

MAX

VR=75V

500

BVR

trr

IR=100μA

IF=1.0mA

IF=10mA

IF=100mA

VR=0, f=1.0MHz

IR=IF=10mA, Irr=1.0mA, RL=100Ω

100

0.85

0.95

1.1

2.0

3.0

UNITS

μs

R3 (9-May 2011)

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