Green
Product
STB/P438A
Ver 1.0
S a mHop Microelectronics C orp.
N-Channel Logic Level Enhancement Mode Field Effect Transistor
PRODUCT SUMMARY
V
DSS
40V
FEATURES
Super high dense cell design for extremely low RDS(ON).
High power and current handling capability.
TO-220 & TO-263 package.
I
D
60A
R
DS(ON)
(m
Ω
) Max
8.5
@
VGS=10V
11
@
VGS=4.5V
D
G
S
G
D
S
S TB S E R IE S
TO-263(DD-P AK)
S TP S E R IE S
TO-220
ABSOLUTE
Symbol
V
DS
V
GS
I
D
I
DM
E
AS
P
D
T
J,
T
STG
MAXIMUM RATINGS (
T
C
=25
°
C unless otherwise noted
)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Drain Current-Continuous
-Pulsed
b
d
a
Limit
40
±20
60
48
177
196
Units
V
V
A
A
A
mJ
W
W
°C
T
C=
25 °C
T
C=
70 °C
Single Pulse Avalanche Energy
Maximum Power Dissipation
a
T
C=
25 °C
T
C=
70 °C
62.5
40
-55 to 150
Operating Junction and Storage
Temperature Range
THERMAL CHARACTERISTICS
R
JC
Thermal Resistance, Junction-to-Case
a
R
JA
Thermal Resistance, Junction-to-Ambient
a
2
50
°C/W
°C/W
Aug,02,2010
1
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STB/P438A
Ver 1.0
ELECTRICAL CHARACTERISTICS
(
T
C
=25
°
C unless otherwise noted
)
Symbol
Parameter
Conditions
V
GS
=0V , I
D
=250uA
V
DS
=32V , V
GS
=0V
Min
40
Typ
Max
Units
V
A
nA
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
BV
DSS
Zero Gate Voltage Drain Current
I
DSS
Gate-Body leakage current
I
GSS
ON CHARACTERISTICS
V
GS(th)
Gate Threshold Voltage
R
DS(ON)
g
FS
Drain-Source On-State Resistance
Forward Transconductance
1
±100
3
8.5
11
V
GS
= ±20V , V
DS
=0V
V
DS
=V
GS
, I
D
=250uA
V
GS
=10V , I
D
=30A
V
GS
=4.5V , I
D
=26A
V
DS
=10V , I
D
=30A
1
1.8
6.8
8.1
69
1540
248
180
28
31
62
36
26.5
12.5
2.8
7.8
0.77
V
m ohm
m ohm
S
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
nC
DYNAMIC CHARACTERISTICS
c
Input Capacitance
C
ISS
Output Capacitance
C
OSS
Reverse Transfer Capacitance
C
RSS
SWITCHING CHARACTERISTICS
t
D(ON)
Turn-On DelayTime
tr
Rise Time
t
D(OFF)
Turn-Off DelayTime
tf
Fall Time
Q
g
Q
gs
Q
gd
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
c
V
DS
=20V,V
GS
=0V
f=1.0MHz
V
DD
=20V
I
D
=1A
V
GS
=10V
R
GEN
=6 ohm
V
DS
=20V,I
D
=25A,V
GS
=10V
V
DS
=20V,I
D
=25A,V
GS
=4.5V
V
DS
=20V,I
D
=25A,
V
GS
=10V
DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS
Diode Forward Voltage
V
SD
V
GS
=0V,I
S
=2A
1.3
V
Notes
_
a.Surface Mounted on FR4 Board,t < 10sec.
_
_
b.Pulse Test:Pulse Width < 300us, Duty Cycle < 2%.
c.Guaranteed by design, not subject to production testing.
d.Starting T
J
=25
°
C,VDD=20V,L=0.5mH.(See Figure13)
Aug,02,2010
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STB/P438A
Ver 1.0
100
35
V
G S
=
10V
V
G S
=
4.5V
I
D
, Drain C urrent(A)
80
V
G S
=
5V
I
D
, Drain C urrent (A)
V
G S
=
4V
28
60
21
T j=125 C
14
-55 C
7
0
25 C
V
G S
=
3.5V
40
20
V
G S
=
3V
0
0.5
1.0
1.5
2.0
2.5
3.0
0
0
0.7
1.4
2.1
2.8
3.5
4.2
V
DS
, Drain-to-Source Voltage(V)
V
GS
, Gate-to-Source Voltage(V)
Figure 1. Output Characteristics
18
15
2.0
Figure 2. Transfer Characteristics
R
DS (ON)
, On-R es is tance
Normalized
1.8
1.6
1.4
1.2
1.0
0
V
G S
=4.5V
I
D
=26A
V
G S
=10V
I
D
=30A
R
DS (on)
(m
Ω
)
12
V
G S
=4.5V
9
6
3
0
V
G S
=10V
0
20
40
60
80
100
0
25
50
75
100
125
I
D
, Drain Current (A)
Tj, Junction Temperature ( C )
150
T j( C )
Figure 3. On-Resistance vs. Drain Current
and Gate Voltage
Figure 4. On-Resistance Variation with
Drain Current and Temperature
V th, Normalized
G ate-S ource T hres hold V oltage
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.0
-50
-25
0
25
50
75 100 125 150
V
DS
=V
G S
I
D
=250uA
B V
DS S
, Normalized
Drain-S ource B reakdown V oltage
1.15
I
D
=250uA
1.10
1.05
1.00
0.95
0.90
0.85
-50
-25
0
25
50
75 100 125 150
Tj, Junction Temperature ( C )
Tj, Junction Temperature ( C )
Figure 5. Gate Threshold Variation
with Temperature
Figure 6. Breakdown Voltage Variation
with Temperature
Aug,02,2010
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STB/P438A
Ver 1.0
30
60
I
D
=30A
20
15
10
5
0
75 C
25 C
Is , S ource-drain current (A)
25
R
DS (on)
(m
Ω
)
125 C
25 C
10
125 C
75 C
0
2
4
6
8
10
1
0
0.24
0.48
0.72
0.96
1.20
V
GS
, Gate-Source Voltage (V)
V
SD
, Body Diode Forward Voltage (V)
Figure 7. On-Resistance vs.
Gate-Source Voltage
Figure 8. Body Diode Forward Voltage
Variation with Source Current
10
V
G S
, G ate to S ource V oltage (V )
1800
Ciss
1500
C , C apacitance (pF )
8
6
4
2
0
V
DS
=20V
I
D
=25A
1200
900
600
Coss
300
Crss
0
0
5
10
15
20
25
30
0
4
8
12
16 20
24
28 32
V
DS
, Drain-to Source Voltage (V)
Qg, Total Gate Charge (nC)
Figure 9. Capacitance
Figure 10. Gate Charge
300
400
TD(off )
S witching T ime (ns )
100
I
D
, Drain C urrent (A)
100
R
D
S
(
Tf
Tr
TD(on)
ON
im
)L
it
1m
10
m
10
0u
s
s
10
10
V
G S
=10V
S ingle P ulse
T c=25 C
DC
s
VDS=20V,ID=1A
VGS=10V
1
1
10
100
1
0.1
1
10
100
Rg, Gate Resistance (
Ω
)
V
DS
, Gate-Source Voltage (V)
Figure 11. Switching Characteristics
Figure 12. Maximum Safe
Operating Area
Aug,02,2010
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STB/P438A
Ver 1.0
15V
V
( BR )D S S
tp
VDS
L
DR IV E R
RG
20V
D .U .T
IA
S
tp
+
- VD D
A
0.0 1
I
AS
Unclamped Inductive Test Circuit
Figure 13a.
Unclamped Inductive Waveforms
Figure 13b.
2
r(t),Normalized Effective
Transient Thermal Impedance
1
D=0.5
0.2
0.1
0.1
0.05
0.02
0.01
S ingle P uls e
P
DM
t
1
t
2
1.
2.
3.
4.
R
J C
(t)=r (t) * R
J C
R
J C
=S ee Datas heet
T
J M-
T
C
= P * R
J C
(t )
Duty C ycle, D=t1/t2
0.01
0.00001
0.0001
0.001
0.01
0.1
1
10
Square Wave Pulse Duration (msec)
Figure 14. Normalized Thermal Transient Impedance Curve
Aug,02,2010
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