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STC3116E

Description
Super high dense cell design for low RDS(ON).
File Size89KB,7 Pages
ManufacturerSAMHOP
Websitehttp://www.samhop.com.tw
Download Datasheet View All

STC3116E Overview

Super high dense cell design for low RDS(ON).

Gre
r
Pro
STC3116E
Ver 1.0
S a mHop Microelectronics C orp.
N-Channel Enhancement Mode Field Effect Transistor
PRODUCT SUMMARY
V
DSS
I
D
R
DS(ON)
(m
Ω
) Max
94
@
VGS=10V
30V
2A
107
@
VGS=4.5V
139
@
VGS=2.5V
FEATURES
Super high dense cell design for low R
DS(ON)
.
Rugged and reliable.
Suface Mount Package.
ESD Protected.
D
S OT -323
D
S
G
S
G
ABSOLUTE MAXIMUM RATINGS (
T
A
=25
°
C unless otherwise noted
)
Symbol
V
DS
V
GS
I
D
I
DM
P
D
T
J,
T
STG
Parameter
Drain-Source Voltage
Gate-Source Voltage
Drain Current-Continuous
-Pulsed
b
a
T
A
=25°C
T
A
=70°C
T
A
=25°C
T
A
=70°C
Limit
30
±12
2
1.6
8
1
0.64
-55 to 150
Units
V
V
A
A
A
W
W
°C
Maximum Power Dissipation
a
Operating Junction and Storage
Temperature Range
THERMAL CHARACTERISTICS
R
JA
Thermal Resistance, Junction-to-Ambient
125
°C/W
Details are subject to change without notice.
Jun,14,2012
1
www.samhop.com.tw
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