ZOWIE
Z1PK104LH
FEATURES
* Halogen-free type
Schottky Barrier Diode
(40V / 1.0 A)
OUTLINE DIMENSIONS
Case : Z1PAK
Unit : mm
* Compliance to RoHS product
*
*
*
*
Lead less chip form, no lead damage
Low power loss, High efficiency
High current capability, low VF
Plastic package has Underwriters Laboratory Flammability
Classification 94V-0
TM
* Patented ZPAK Package Technology
2.00 ± 0.1
1.30 ± 0.1
0.50 ± 0.1
1.00
Typ.
R 0.
3
0.50 ± 0.1
APPLICATION
*
*
*
*
*
Switching mode power supply applications
Portable equipment battery applications
High frequency rectification
DC / DC Converter
Telecommunication
+ 0.2
0.80 - 0.1
1.00 ± 0.1
Equivalent : SOD-323
0.45 ± 0.1
MECHANICAL DATA
Case :
Packed with FRP substrate and epoxy underfilled
Terminals :
Pure Tin plated (Lead-Free),
solderable per MIL-STD-750, Method 2026.
Polarity :
Laser Cathode band marking
Weight :
0.005 gram
MARKING
A
4L
PACKING
*
3,000 pieces per 7" (178mm ± 2mm) reel
*
5 reels per box
*
6 boxes per carton
Absolute Maximum Ratings (Ta = 25 C)
ITEM
Repetitive peak reverse voltage
Average forward current
Peak forward surge current
Operating junction temperature Range
Storage temperature Range
o
Symbol
V
RRM
I
F(AV)
I
FSM
T
j
T
STG
Conditions
Rating
40
1.0
Unit
V
A
A
o
o
8.3ms single half sine-wave
20
-55 to +125
- 55 to +150
C
C
Electrical characteristics (Ta = 25 C)
ITEM
Symbol
Conditions
Min.
Typ.
Max.
Unit
o
Forward voltage (NOTE 1)
V
F
I
F
= 1.0 A
-
0.37
0.40
V
Repetitive peak reverse current (NOTE 1)
Junction capacitance
Thermal resistance
I
RRM
C
j
R
th(JA)
R
th(JL)
V
R
= Max. V
RRM
, Ta = 25
o
C
V
R
= 4V, f = 1.0 MHz
Junction to ambient
Junction to lead
-
-
-
-
0.50
115
88
28
1.0
-
-
-
o
o
mA
pF
C/W
C/W
NOTES : (1) Pulse test width PW=300usec , 1% duty cycle.
(2) Mounted on P.C. board with 5.0 x 0.5mm copper pad areas.
REV. 1
2014/01
ZOWIE
Z1PK104LH
(40V / 1.0A)
FIG.1 - FORWARD CURRENT DERATING CURVE
1.0
AVERAGE FORWARD RECTIFIED
CURRENT, AMPERES
PEAK FORWARD SURGE CURRENT,
AMPERES
RESISTIVE OR
INDUCTIVE LOAD
P.C.B. MOUNTED ON
0.2X0.2"(5.0X5.0mm)
COPPER PAD AREAS
FIG.2 - MAXIMUM NON-REPETITIVE
PEAK FORWARD SURGE CURRENT
25
8.3ms Single Half Sine-Wave
20
15
0.5
10
5
0
0
25
50
75
o
0
100
125
1
10
NUMBER OF CYCLES AT 60Hz
100
LEAD TEMPERATURE, C
FIG.3 - TYPICAL INSTANTANEOUS
FORWARD CHARACTERISTICS
10
100
FIG.4 - TYPICAL REVERSE CHARACTERISTICS
IINSTANTANEOUS FORWARD CURRENT,
AMPERES
INSTANTANEOUS REVERSE CURRENT,
MILLIAMPERES
10
TJ=80 C
o
1.00
1.0
0.10
0.10
TJ=25 C
o
0.01
Ta=25 C
o
0.01
.001
0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
.001
0
20
40
60
80
100
120
140
FORWARD VOLTAGE, (V)
PERCENT OF RATED PEAK REVERSE VOLTAGE,%
FIG.5 - TYPICAL JUNCTION CAPACITANCE
400
JUNCTION CAPACITANCE, pF
T
J
= 25 C
f=1.0MHz
Vsig=50mVP-P
o
100
10
0
1.0
10
100
REVERSE VOLTAGE, VOLTS
REV. 1
2014/01
NXP MCU
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