DSS4540X
LOW V
CE(SAT)
NPN SURFACE MOUNT TRANSISTOR
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Features
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Complementary PNP Type Available (DSS5540X)
Ultra Low Collector-Emitter Saturation Voltage
Ideally Suited for Automated Assembly Processes
Ideal for Medium Power Switching or Amplification Applications
Lead Free By Design/RoHS Compliant (Note 1)
"Green" Device (Note 2)
Mechanical Data
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Case: SOT89-3L
Case Material: Molded Plastic, "Green” Molding Compound.
UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020D
Terminals: Finish — Matte Tin annealed over Copper leadframe
(Lead Free Plating). Solderable per MIL-STD-202, Method 208
Marking Information: See Page 4
Ordering Information: See Page 4
Weight: 0.072 grams (approximate)
NEW PRODUCT
COLLECTOR
2,4
3 E
C 4
2 C
1 B
Pin Out Configuration
1
BASE
3
EMITTER
Device Schematic
Top View
Maximum Ratings
@T
A
= 25°C unless otherwise specified
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
CRM
I
CM
I
B
I
BM
Value
40
40
6
4
5
10
1
2
Unit
V
V
V
A
A
A
A
A
Characteristic
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Continuous Collector Current
Repetitive Collector Current (Note 3)
Peak Pulse Collector Current
Continuous Base Current
Peak Pulse Base Current
Thermal Characteristics
Characteristic
Power Dissipation (Note 4) @ T
A
= 25°C
Thermal Resistance, Junction to Ambient Air (Note 4) @ T
A
= 25°C
Power Dissipation (Note 5) @ T
A
= 25°C
Thermal Resistance, Junction to Ambient Air (Note 5) @ T
A
= 25°C
Operating and Storage Temperature Range
Notes:
1.
2.
3.
4.
5.
Symbol
P
D
R
θ
JA
P
D
R
θ
JA
T
J
, T
STG
Value
0.9
139
2
62.5
-55 to +150
Unit
W
°C/W
W
°C/W
°C
No purposefully added lead.
Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com/products/lead_free/index.php.
Operated under pulsed conditions: pulse width
≤
10ms; duty cycle
≤
0.2.
Device mounted on FR-4 PCB with minimum recommended pad layout.
Device mounted on FR-4 PCB with 1 inch
2
copper pad layout.
DSS4540X
Document number: DS31592 Rev. 2 - 2
1 of 4
www.diodes.com
December 2008
© Diodes Incorporated
DSS4540X
Electrical Characteristics
@T
A
= 25°C unless otherwise specified
Symbol
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CBO
I
CES
I
EBO
Min
40
40
6
⎯
⎯
⎯
⎯
300
300
250
100
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
70
⎯
⎯
⎯
⎯
⎯
⎯
⎯
Typ
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
80
160
185
37
⎯
⎯
⎯
⎯
⎯
135
60
75
670
570
100
Max
⎯
⎯
⎯
100
50
100
100
⎯
⎯
⎯
⎯
90
120
150
290
355
71
1.1
1.2
1.1
⎯
75
⎯
⎯
⎯
⎯
⎯
⎯
Unit
V
V
V
nA
μA
nA
nA
Test Conditions
I
C
= 100μA
I
C
= 10mA
I
E
= 100μA
V
CB
= 30V, I
E
= 0
V
CB
= 30V, I
E
= 0, T
A
= 150°C
V
CE
= 30V, V
BE
= 0V
V
EB
= 5V, I
C
= 0
V
CE
= 2V, I
C
= 0.5A
V
CE
= 2V, I
C
= 1A
V
CE
= 2V, I
C
= 2A
V
CE
= 2V, I
C
= 5A
I
C
= 0.5A, I
B
= 5mA
I
C
= 1A, I
B
= 10mA
I
C
= 2A, I
B
= 200mA
I
C
= 4A, I
B
= 200mA
I
C
= 5A, I
B
= 500mA
I
C
= 5A, I
B
= 500mA
I
C
= 4A, I
B
= 200mA
I
C
= 5A, I
B
= 500mA
V
CE
= 2V, I
C
= 2A
V
CE
= 10V, I
C
= 0.1A,
f = 100MHz
V
CB
= 10V, I
E
= 0A,
f = 1MHz
V
CC
= 10V, I
C
= 2A,
I
B1
= 40mA
V
CC
= 10V, I
C
= 2A,
I
B1
= I
B2
= 40mA
Characteristic
OFF CHARACTERISTICS
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage (Note 6)
Emitter-Base Breakdown Voltage
NEW PRODUCT
Collector-Base Cutoff Current
Collector-Emitter Cut-Off Current
Emitter-Base Cutoff Current
ON CHARACTERISTICS (Note 6)
DC Current Gain
h
FE
⎯
Collector-Emitter Saturation Voltage
V
CE(SAT)
mV
Equivalent On-Resistance
Base-Emitter Saturation Voltage
Base-Emitter Turn-on Voltage
SMALL SIGNAL CHARACTERISTICS
Transition Frequency
Collector Capacitance
SWITCHING CHARACTERISTICS
Turn-On Time
Delay Time
Rise Time
Turn-Off Time
Storage Time
Fall Time
Notes:
R
CE(SAT)
V
BE(SAT)
V
BE(ON)
f
T
C
c
t
on
t
d
t
r
t
off
t
s
t
f
mΩ
V
V
MHz
pF
ns
ns
ns
ns
ns
ns
6. Measured under pulsed conditions. Pulse width = 300μs. Duty cycle
≤2%.
2.0
4.0
3.5
P
D
, POWER DISSIPATION (W)
1.6
I
C
, COLLECTOR CURRENT (A)
I
B
= 10mA
3.0
I
B
= 8mA
1.2
Note 5
2.5
I
B
= 6mA
2.0
1.5
1.0
I
B
= 2mA
I
B
= 4mA
0.8
0.4
Note 4
0.5
0
0
25
50
75
100
125
150
T
A
, AMBIENT TEMPERATURE (
°
C)
Fig. 1 Power Dissipation vs. Ambient Temperature
0
0
1
2
3
4
V
CE
, COLLECTOR-EMITTER VOLTAGE (V)
Fig. 2 Typical Collector Current
vs. Collector-Emitter Voltage
5
DSS4540X
Document number: DS31592 Rev. 2 - 2
2 of 4
www.diodes.com
December 2008
© Diodes Incorporated
DSS4540X
800
700
T
A
= 150°C
V
CE
= 2V
1
I
C
/I
B
= 10
h
FE
, DC CURRENT GAIN
600
500
400
300
200
100
0
0.001
T
A
= -55°C
T
A
= 85°C
V
CE(SAT)
, COLLECTOR-EMITTER
SATURATION VOLTAGE (V)
0.1
T
A
= 150°C
T
A
= 85°C
T
A
= 25°C
NEW PRODUCT
T
A
= 25°C
0.01
T
A
= -55°C
0.01
0.1
1
10
I
C
, COLLECTOR CURRENT (mA)
Fig. 3 Typical DC Current Gain vs. Collector Current
0.001
0.001
0.01
0.1
1
10
I
C
, COLLECTOR CURRENT (mA)
Fig. 4 Typical Collector-Emitter Saturation Voltage
vs. Collector Current
V
BE(SAT)
, BASE-EMITTER SATURATION VOLTAGE (V)
V
BE(ON)
, BASE-EMITTER TURN-ON VOLTAGE (V)
1.2
V
CE
= 2V
1.2
I
C
/I
B
= 10
1.0
1.0
0.8
T
A
= -55°C
0.8
T
A
= -55°C
0.6
T
A
= 25°C
0.6
T
A
= 25°C
0.4
T
A
= 85°C
0.4
T
A
= 85°C
T
A
= 150°C
0.2
T
A
= 150°C
0.2
0
0.001
0
0.001
0.01
0.1
1
I
C
, COLLECTOR CURRENT (mA)
Fig. 5 Typical Base-Emitter Turn-On Voltage
vs. Collector Current
10
0.01
0.1
1
10
I
C
, COLLECTOR CURRENT (mA)
Fig. 6 Typical Base-Emitter Saturation Voltage
vs. Collector Current
1,000
f = 1MHz
1,000
f
T
, GAIN-BANDWIDTH PRODUCT (MHz)
CAPACITANCE (pF)
100
100
C
ibo
10
C
obo
10
V
CE
= 10V
f = 100MHz
1
0.1
1
10
100
V
R
, REVERSE VOLTAGE (V)
Fig. 7 Typical Capacitance Characteristics
1
0
10
20 30 40 50 60 70 80 90 100
I
C
, COLLECTOR CURRENT (mA)
Fig. 8 Typical Gain-Bandwidth Product
vs. Collector Current
DSS4540X
Document number: DS31592 Rev. 2 - 2
3 of 4
www.diodes.com
December 2008
© Diodes Incorporated
DSS4540X
Ordering Information
Part Number
DSS4540X-13
Notes:
(Note 7)
Case
SOT89-3L
Packaging
2500/Tape & Reel
7. For packaging details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf.
NEW PRODUCT
Marking Information
ZNS54 = Product Type Marking Code
= Manufacturer’s Code Marking
YWW = Date Code Marking
Y = Last digit of year (ex: 8 = 2008)
WW = Week code 01 - 52
YWW
ZNS54
Package Outline Dimensions
D1
.
R0
20
0
C
E
H
B
B1
8°
(4 X
)
L
e
A
SOT89-3L
Dim Min Max Typ
A
1.40 1.60 1.50
B
0.45 0.55 0.50
B1
0.37 0.47 0.42
C
0.35 0.43 0.38
D
4.40 4.60 4.50
D1
1.50 1.70 1.60
E
2.40 2.60 2.50
e
—
—
1.50
H
3.95 4.25 4.10
L
0.90 1.20 1.05
All Dimensions in mm
D
Suggested Pad Layout
X1
Y1
X3
Y3
X2
Y2
Dimensions Value (in mm)
X1
1.7
X2
0.9
X3
0.4
Y1
2.7
Y2
1.3
Y3
1.9
C
3.0
C
IMPORTANT NOTICE
Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes
without further notice to any product herein. Diodes Incorporated does not assume any liability arising out of the application or use of any product
described herein; neither does it convey any license under its patent rights, nor the rights of others. The user of products in such applications shall
assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on our website,
harmless against all damages.
LIFE SUPPORT
Diodes Incorporated products are not authorized for use as critical components in life support devices or systems without the expressed written
approval of the President of Diodes Incorporated.
DSS4540X
Document number: DS31592 Rev. 2 - 2
4 of 4
www.diodes.com
December 2008
© Diodes Incorporated
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