1N4248 datasheet, PDF - EEWORLD Datasheet

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1N4248: Description1 A, 800 V, SILICON, SIGNAL DIODE; CategoryDiscrete semiconductor diode; File Size402KB，2 Pages; ManufacturerCentral Semiconductor

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1N4248 Overview

1 A, 800 V, SILICON, SIGNAL DIODE

1N4248 Parametric

Parameter Name	Attribute value
Is it lead-free?	Contains lead
Is it Rohs certified?	incompatible
package instruction	E-XALF-W2
Contacts	2
Manufacturer packaging code	GPR-1A
Reach Compliance Code	_compli
ECCN code	EAR99
Other features	HIGH RELIABILITY
Shell connection	ISOLATED
Configuration	SINGLE
Diode component materials	SILICON
Diode type	RECTIFIER DIODE
Maximum forward voltage (VF)	1.2 V
JESD-30 code	E-XALF-W2
JESD-609 code	e0
Maximum non-repetitive peak forward current	25 A
Number of components	1
Number of terminals	2
Maximum operating temperature	160 °C
Maximum output current	1 A
Package body material	UNSPECIFIED
Package shape	ELLIPTICAL
Package form	LONG FORM
Peak Reflow Temperature (Celsius)	NOT SPECIFIED
Certification status	Not Qualified
Maximum repetitive peak reverse voltage	800 V
Maximum reverse recovery time	5 µs
surface mount	NO
Terminal surface	Tin/Lead (Sn/Pb)
Terminal form	WIRE
Terminal location	AXIAL
Maximum time at peak reflow temperature	NOT SPECIFIED
Base Number Matches	1

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1N4245

1N4246

1N4247

1N4248

1N4249

w w w. c e n t r a l s e m i . c o m

GLASS PASSIVATED

SILICON RECTIFIERS

1.0 AMP, 200 THRU 1000 VOLT

DESCRIPTION:

The CENTRAL SEMICONDUCTOR 1N4245 series

types are silicon rectifiers mounted in a hermetically

sealed, glass passivated package for general purpose

applications where high reliability is desired.

MARKING: FULL PART NUMBER

GPR-1A CASE

MAXIMUM RATINGS:

(TA=25°C unless otherwise noted)

SYMBOL 1N4245 1N4246 1N4247 1N4248 1N4249 UNITS

Peak Repetitive Reverse Voltage

VRRM

200

400

600

800

1000

V

DC Blocking Voltage

RMS Reverse Voltage

Average Forward Current (TA=55°C)

Peak Forward Surge Current, tp=8.3ms

Operating and Storage Junction Temperature

ELECTRICAL

SYMBOL

IR

VF

trr

VR

VR(RMS)

IO

IFSM

TJ, Tstg

200

140

400

280

600

420

1.0

40

-65 to +200

800

560

1000

700

V

A

°C

CHARACTERISTICS:

(TA=25°C unless otherwise noted)

TEST CONDITIONS

TYP

VR=Rated VRRM

VR=Rated VRRM, TA=125°C

IF=1.0A

IF=0.5A, IR=1.0A, Irr=0.25A

2.0

MAX

1.0

25

1.2

5.0

UNITS

μA

V

μs

R1 (28-February 2013)

1N4248 Related Products

	1N4248	1N4245	PMEG045V100EPD_15	1N4247	1N4249
Description	1 A, 800 V, SILICON, SIGNAL DIODE	1 A, 200 V, SILICON, SIGNAL DIODE, DO-204AP	45 V, 10 A low VF MEGA Schottky barrier rectifier	1 A, SILICON, SIGNAL DIODE	1 A, 1000 V, SILICON, SIGNAL DIODE, DO-204AP
Is it lead-free?	Contains lead	Contains lead	-	Contains lead	Contains lead
Is it Rohs certified?	incompatible	incompatible	-	incompatible	incompatible
package instruction	E-XALF-W2	GPR-1A, 2 PIN	-	E-XALF-W2	GPR-1A, 2 PIN
Contacts	2	2	-	2	2
Manufacturer packaging code	GPR-1A	GPR-1A	-	GPR-1A	GPR-1A
Reach Compliance Code	_compli	_compli	-	not_compliant	_compli
ECCN code	EAR99	EAR99	-	EAR99	EAR99
Other features	HIGH RELIABILITY	HIGH RELIABILITY	-	HIGH RELIABILITY	HIGH RELIABILITY
Shell connection	ISOLATED	ISOLATED	-	ISOLATED	ISOLATED
Configuration	SINGLE	SINGLE	-	SINGLE	SINGLE
Diode component materials	SILICON	SILICON	-	SILICON	SILICON
Diode type	RECTIFIER DIODE	RECTIFIER DIODE	-	RECTIFIER DIODE	RECTIFIER DIODE
Maximum forward voltage (VF)	1.2 V	1.2 V	-	1.2 V	1.2 V
JESD-30 code	E-XALF-W2	E-XALF-W2	-	E-XALF-W2	E-XALF-W2
JESD-609 code	e0	e0	-	e0	e0
Maximum non-repetitive peak forward current	25 A	25 A	-	25 A	25 A
Number of components	1	1	-	1	1
Number of terminals	2	2	-	2	2
Maximum operating temperature	160 °C	160 °C	-	160 °C	160 °C
Maximum output current	1 A	1 A	-	1 A	1 A
Package body material	UNSPECIFIED	UNSPECIFIED	-	UNSPECIFIED	UNSPECIFIED
Package shape	ELLIPTICAL	ELLIPTICAL	-	ELLIPTICAL	ELLIPTICAL
Package form	LONG FORM	LONG FORM	-	LONG FORM	LONG FORM
Peak Reflow Temperature (Celsius)	NOT SPECIFIED	NOT SPECIFIED	-	NOT SPECIFIED	NOT SPECIFIED
Certification status	Not Qualified	Not Qualified	-	Not Qualified	Not Qualified
Maximum repetitive peak reverse voltage	800 V	200 V	-	600 V	1000 V
Maximum reverse recovery time	5 µs	5 µs	-	5 µs	5 µs
surface mount	NO	NO	-	NO	NO
Terminal surface	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)	-	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)
Terminal form	WIRE	WIRE	-	WIRE	WIRE
Terminal location	AXIAL	AXIAL	-	AXIAL	AXIAL
Maximum time at peak reflow temperature	NOT SPECIFIED	NOT SPECIFIED	-	NOT SPECIFIED	NOT SPECIFIED
Base Number Matches	1	-	-	1	1

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