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DCP68_15

Description
NPN SURFACE MOUNT TRANSISTOR
File Size148KB,4 Pages
ManufacturerDiodes
Websitehttp://www.diodes.com/
Download Datasheet View All

DCP68_15 Overview

NPN SURFACE MOUNT TRANSISTOR

DCP68/-25
NPN SURFACE MOUNT TRANSISTOR
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Features
Epitaxial Planar Die Construction
Complementary PNP Type Available (DCP69)
Ideally Suited for Automated Assembly Processes
Ideal for Medium Power Switching or Amplification Applications
Lead Free By Design/RoHS Compliant (Note 1)
"Green" Device (Note 2)
3
2
1
4
SOT-223
COLLECTOR
NEW PRODUCT
Mechanical Data
Case: SOT-223
Case Material: Molded Plastic, “Green” Molding Compound.
UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020D
Terminals: Finish - Matte Tin annealed over Copper leadframe
(Lead Free Plating). Solderable per MIL-STD-202, Method 208
Marking Information: See Page 3
Ordering Information: See Page 3
Weight: 0.115 grams
@T
A
= 25°C unless otherwise specified
Symbol
V
CBO
V
CEO
V
EBO
I
C
3 E
C 4
2 C
1 B
TOP VIEW
1
BASE
2,4
3
EMITTER
Schematic and Pin Configuration
Maximum Ratings
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Characteristic
Value
25
20
5.0
1.0
Units
V
V
V
A
Thermal Characteristics
Characteristic
Power Dissipation @ T
A
= 25ºC (Note 3)
Thermal Resistance, Junction to Ambient Air @ T
A
= 25°C (Note 3)
Operating and Storage Temperature Range
Symbol
P
D
R
θ
JA
T
J
, T
STG
Value
1
125
-55 to 150
Unit
W
°C/W
°C
Electrical Characteristics
Characteristic
OFF CHARACTERISTICS (Note 4)
Collector-Emitter Breakdown Voltage
Collector-Emitter Breakdown Voltage
Collector-Base Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector-Base Cutoff Current
Emitter-Base Cutoff Current
ON CHARACTERISTICS (Note 4)
@T
A
= 25°C unless otherwise specified
Symbol
V
(BR)CES
V
(BR)CEO
V
(BR)CBO
V
(BR)EBO
I
CBO
I
EBO
DCP68, DCP68-25
Min
25
20
25
5.0
50
60
85
160
Typ
330
Max
100
10
375
375
0.5
1.0
Unit
V
V
V
V
nA
μA
Test Condition
I
C
= 100μA, I
E
= 0
I
C
= 1.0mA, I
B
= 0
I
C
= 10μA, I
E
= 0
I
E
= 10μA, I
C
= 0
V
CB
= 25V, I
E
= 0
V
EB
= 5.0V, I
C
= 0
V
CE
= 10V, I
C
= 5.0mA
V
CE
= 1.0V, I
C
= 1.0A
V
CE
= 1.0V, I
C
= 500mA
V
CE
= 1.0V, I
C
= 500mA
I
C
= 1.0A, I
B
= 100mA
V
CE
= 1.0V, I
C
= 1.0A
I
C
= 100mA, V
CE
= 5.0V
f = 100MHz
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter Turn-On Voltage
SMALL SIGNAL CHARACTERISTICS
Current Gain-Bandwidth Product
Notes:
DCP68
DCP68-25
h
FE
V
CE(SAT)
V
BE (ON)
f
T
V
V
MHz
1. No purposefully added lead.
2. Diodes Inc.'s "Green" Policy can be found on our website at http://www.diodes.com/products/lead_free/index.php.
3. Device mounted on FR-4 PCB; pad layout as shown on page 4 or in Diodes Inc. suggested pad layout document AP02001, which can
be found on our website at http://www.diodes.com/datasheets/ap02001.pdf.
4. Measured under pulsed conditions. Pulse width = 300μs. Duty cycle
≤2%.
DS30797 Rev. 6 - 2
1 of 4
www.diodes.com
DCP68/-25
© Diodes Incorporated
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