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DN0150ADJ_15

Description
DUAL NPN SURFACE MOUNT TRANSISTOR
File Size79KB,4 Pages
ManufacturerDiodes
Websitehttp://www.diodes.com/
Download Datasheet View All

DN0150ADJ_15 Overview

DUAL NPN SURFACE MOUNT TRANSISTOR

DN0150ADJ / DN0150BDJ
DUAL NPN SURFACE MOUNT TRANSISTOR
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Features
Epitaxial Planar Die Construction
Ideally Suited for Automated Assembly Processes
Lead Free By Design/RoHS Compliant (Note 1)
"Green" Device (Note 2)
Ultra Small Package
Mechanical Data
SOT-963
NEW PRODUCT
Case: SOT-963
Case Material: Molded Plastic, “Green” Molding Compound. UL
Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020D
Terminals: Finish
Matte Tin annealed over Copper leadframe.
Solderable per MIL-STD-202, Method 208
Marking Information: See Page 3
Ordering Information: See Page 3
Weight: 0.0027 grams (approximate)
6
5
4
Q1
Q2
1
Top View
2
3
Device Schematic
Maximum Ratings
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current – Continuous
Base Current
@T
A
= 25°C unless otherwise specified
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
B
Value
60
50
5
100
30
Unit
V
V
V
mA
mA
Characteristic
Thermal Characteristics
Characteristic
Power Dissipation (Note 3)
Thermal Resistance, Junction to Ambient (Note 3)
Operating and Storage Temperature Range
Symbol
P
D
R
θ
JA
T
J
, T
STG
Value
300
417
-55 to +150
Unit
mW
°C/W
°C
Electrical Characteristics
Characteristic
OFF CHARACTERISTICS (Note 4)
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cut-Off Current
Emitter Cut-Off Current
ON CHARACTERISTICS (Note 4)
Collector-Emitter Saturation Voltage
DC Current Gain
SMALL SIGNAL CHARACTERISTICS
Transition Frequency
Output Capactiance
Notes:
1.
2.
3.
4.
@T
A
= 25°C unless otherwise specified
Symbol
V(
BR)CBO
V(
BR)CEO
V(
BR)EBO
I
CBO
I
EBO
V
CE(SAT)
DN0150ADJ
DN0150BDJ
h
FE
Min
60
50
5
120
200
60
Typ
0.10
1.3
Max
0.1
0.1
0.25
240
400
Unit
V
V
V
μA
μA
V
Test Condition
I
C
= 10μA, I
E
= 0
I
C
= 1mA, I
B
= 0
I
E
= 10μA, I
C
= 0
V
CB
= 60V, I
E
= 0
V
EB
= 5V, I
C
= 0
I
C
= 100mA, I
B
= 10mA
V
CE
= 6V, I
C
= 2mA
V
CE
= 10V, I
E
= -1mA
f = 30MHz
V
CB
= 10V, I
E
= 0,
f = 1MHz
f
T
C
ob
MHz
pF
No purposefully added lead.
Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com/products/lead_free/index.php.
Device mounted on FR-4 PCB with minimum recommended pad layout.
Measured under pulsed conditions. Pulse width = 300µs. Duty cycle
≤2%
DN0150ADJ / DN0150BDJ
Document number: DS31484 Rev. 3 - 2
1 of 4
www.diodes.com
April 2009
© Diodes Incorporated
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