3N259-M datasheet, PDF - EEWORLD Datasheet

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3N259-M: Description2 A, 1000 V, SILICON, BRIDGE RECTIFIER DIODE; CategoryDiscrete semiconductor diode; File Size456KB，2 Pages; ManufacturerCentral Semiconductor

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3N259-M Overview

2 A, 1000 V, SILICON, BRIDGE RECTIFIER DIODE

3N259-M Parametric

Parameter Name	Attribute value
Is it lead-free?	Contains lead
Is it Rohs certified?	incompatible
Reach Compliance Code	_compli
Minimum breakdown voltage	1000 V
Configuration	BRIDGE, 4 ELEMENTS
Diode component materials	SILICON
Diode type	BRIDGE RECTIFIER DIODE
Maximum forward voltage (VF)	1.1 V
JESD-30 code	R-PSIP-T4
JESD-609 code	e0
Maximum non-repetitive peak forward current	55 A
Number of components	4
Phase	1
Number of terminals	4
Maximum operating temperature	150 °C
Minimum operating temperature	-65 °C
Maximum output current	2 A
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	IN-LINE
Peak Reflow Temperature (Celsius)	NOT SPECIFIED
Certification status	Not Qualified
Maximum repetitive peak reverse voltage	1000 V
surface mount	NO
Terminal surface	Tin/Lead (Sn/Pb)
Terminal form	THROUGH-HOLE
Terminal location	SINGLE
Maximum time at peak reflow temperature	NOT SPECIFIED
Base Number Matches	1

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3N254-M SERIES

SILICON BRIDGE RECTIFIERS

w w w. c e n t r a l s e m i . c o m

DESCRIPTION:

The CENTRAL SEMICONDUCTOR 3N254-M series

types are silicon single phase, full wave bridge rectifiers

designed for general purpose applications.

MARKING: FULL PART NUMBER

CASE B-M

MAXIMUM RATINGS:

(TA=25°C unless otherwise noted)

SYMBOL 254-M

Peak Repetitive Reverse Voltage

VRRM

100

DC Blocking Voltage

100

RMS Reverse Voltage

Average Forward Current (TA=55°C)

Peak Forward Surge Current

Operating and Storage

Junction Temperature

ELECTRICAL

SYMBOL

VR(RMS)

IFSM

TJ, Tstg

255-M

200

140

256-M

400

280

2.0

257-M

600

420

258-M

800

560

259-M UNITS

1000

700

°C

-65 to +150

CHARACTERISTICS PER DIODE:

(TA=25°C unless otherwise noted)

TEST CONDITIONS

MIN

MAX

VR=Rated VRRM

IF=3.14A

1.1

UNITS

μA

R3 (25-February 2013)

3N259-M Related Products

	3N259-M	3N254-M	3N256-M	3N257-M	3N258-M	3N255-M
Description	2 A, 1000 V, SILICON, BRIDGE RECTIFIER DIODE	2 A, 100 V, SILICON, BRIDGE RECTIFIER DIODE	2 A, 400 V, SILICON, BRIDGE RECTIFIER DIODE	2 A, 600 V, SILICON, BRIDGE RECTIFIER DIODE	2 A, 800 V, SILICON, BRIDGE RECTIFIER DIODE	2 A, 200 V, SILICON, BRIDGE RECTIFIER DIODE
Is it lead-free?	Contains lead	Contains lead	Contains lead	Contains lead	Contains lead	Contains lead
Is it Rohs certified?	incompatible	incompatible	incompatible	incompatible	incompatible	incompatible
Reach Compliance Code	_compli	_compli	_compli	_compli	_compli	_compli
Minimum breakdown voltage	1000 V	100 V	400 V	600 V	800 V	200 V
Configuration	BRIDGE, 4 ELEMENTS	BRIDGE, 4 ELEMENTS	BRIDGE, 4 ELEMENTS	BRIDGE, 4 ELEMENTS	BRIDGE, 4 ELEMENTS	BRIDGE, 4 ELEMENTS
Diode component materials	SILICON	SILICON	SILICON	SILICON	SILICON	SILICON
Diode type	BRIDGE RECTIFIER DIODE	BRIDGE RECTIFIER DIODE	BRIDGE RECTIFIER DIODE	BRIDGE RECTIFIER DIODE	BRIDGE RECTIFIER DIODE	BRIDGE RECTIFIER DIODE
Maximum forward voltage (VF)	1.1 V	1.1 V	1.1 V	1.1 V	1.1 V	1.1 V
JESD-30 code	R-PSIP-T4	R-PSIP-T4	R-PSIP-T4	R-PSIP-T4	R-PSIP-T4	R-PSIP-T4
JESD-609 code	e0	e0	e0	e0	e0	e0
Maximum non-repetitive peak forward current	55 A	55 A	55 A	55 A	55 A	55 A
Number of components	4	4	4	4	4	4
Phase	1	1	1	1	1	1
Number of terminals	4	4	4	4	4	4
Maximum operating temperature	150 °C	150 °C	150 °C	150 °C	150 °C	150 °C
Minimum operating temperature	-65 °C	-65 °C	-65 °C	-65 °C	-65 °C	-65 °C
Maximum output current	2 A	2 A	2 A	2 A	2 A	2 A
Package body material	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY
Package shape	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR
Package form	IN-LINE	IN-LINE	IN-LINE	IN-LINE	IN-LINE	IN-LINE
Peak Reflow Temperature (Celsius)	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED
Certification status	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified
Maximum repetitive peak reverse voltage	1000 V	100 V	400 V	600 V	800 V	200 V
surface mount	NO	NO	NO	NO	NO	NO
Terminal surface	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)
Terminal form	THROUGH-HOLE	THROUGH-HOLE	THROUGH-HOLE	THROUGH-HOLE	THROUGH-HOLE	THROUGH-HOLE
Terminal location	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE
Maximum time at peak reflow temperature	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED
Base Number Matches	1	1	1	1	1	1

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