BC847BVN
COMPLEMENTARY PAIR SMALL SIGNAL SURFACE MOUNT TRANSISTOR
Features
•
•
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•
•
•
•
Epitaxial Die Construction
Two Internally Isolated NPN/PNP Transistors in One Package
Ultra-Small Surface Mount Package
Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. "Green" Device (Note 3)
Qualified to AEC-Q101 Standards for High Reliability
PPAP Capable (Note 4)
Mechanical Data
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•
•
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Case: SOT563
Case Material: Molded Plastic, “Green” Molding Compound.
UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminals: Finish
Matte Tin Annealed over Copper Leadframe.
Solderable per MIL-STD-202, Method 208
Weight: 0.003 grams (Approximate)
SOT563
C
1
B
2
E
2
Q
1
Q
2
E
1
B
1
C
2
Top View
Bottom View
Device Schematic
Top View
Ordering Information
(Notes 4 & 5)
Part Number
BC847BVN-7
BC847BVNQ-7
Notes:
Compliance
AEC-Q101
Automotive
Marking
KAW
KAW
Reel Size (inches)
7
7
Tape Width (mm)
8
8
Quantity per Reel
3,000
3,000
1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. Automotive products are AEC-Q101 qualified and are PPAP capable. Automotive, AEC-Q101 and standard products are electrically and thermally the
same, except where specified. For more information, please refer to http://www.diodes.com/quality/product_compliance_definitions/.
5. For packaging details, go to our website at http://www.diodes.com/products/packages.html.
Marking Information
SOT563
KAW = Product Type Marking Code
YM = Date Code Marking
Y = Year (ex: Y = 2011)
M = Month (ex: 9 = September)
KAW YM
Date Code Key
Year
Code
Month
Code
2010
X
Jan
1
2011
Y
Feb
2
Mar
3
2012
Z
Apr
4
May
5
2013
A
Jun
6
2014
B
Jul
7
Aug
8
2015
C
Sep
9
2016
D
Oct
O
Nov
N
2017
E
Dec
D
BC847BVN
Document number: DS30627 Rev. 7 - 2
1 of 6
www.diodes.com
March 2015
© Diodes Incorporated
BC847BVN
Maximum Ratings: NPN, BC847B Type (Q
1
)
(@T
A
= +25°C, unless otherwise specified.)
Characteristic
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Peak Collector Current
Peak Emitter Current
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
CM
I
EM
Value
50
45
6
100
200
200
Unit
V
V
V
mA
mA
mA
Maximum Ratings: PNP, BC857B Type (Q
2
)
(@T
A
= +25°C unless otherwise specified.)
Characteristic
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Peak Collector Current
Peak Emitter Current
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
CM
I
EM
Value
-50
-45
-6
-100
-200
-200
Unit
V
V
V
mA
mA
mA
Thermal Characteristics
– Total Device
(@T
A
= +25°C unless otherwise specified.)
Characteristic
Power Dissipation (Note 6) Total Device
Thermal Resistance, Junction to Ambient (Note 6)
Operating and Storage Temperature Range
Note:
Symbol
P
D
R
θ
JA
T
J
, T
STG
Value
150
833
-65 to +150
Unit
mW
°
C/W
°
C
6. For a device surface mounted on minimum recommended pad layout FR-4 PCB with single sided 1oz copper, in still air conditions; the device is
measured when operating in a steady-state condition.
Electrical Characteristics: NPN, BC847B Type (Q
1
)
(@T
A
= +25°C unless otherwise specified.)
Characteristic (Note 7)
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Base-Emitter Voltage
Collector-Cutoff Current
Gain Bandwidth Product
Collector-Base Capacitance
Note:
Symbol
BV
CBO
BV
CEO
BV
EBO
h
FE
V
CE(sat)
V
BE(sat)
V
BE(on)
I
CBO
f
T
C
CBO
Min
50
45
6
200
—
—
580
—
—
—
100
—
Typ
—
—
—
290
90
200
700
900
660
—
—
—
300
3.5
Max
—
—
—
450
250
600
—
700
720
15
5.0
—
6.0
Unit
V
V
V
—
mV
mV
mV
nA
µA
MHz
pF
Test Condition
I
C
= 100µA, I
B
= 0
I
C
= 10mA, I
B
= 0
I
E
= 100µA, I
C
= 0
V
CE
= 5.0V, I
C
= 2.0mA
I
C
= 10mA, I
B
= 0.5mA
I
C
= 100mA, I
B
= 5.0mA
I
C
= 10mA, I
B
= 0.5mA
I
C
= 100mA, I
B
= 5.0mA
V
CE
= 5.0V, I
C
= 2.0mA
V
CE
= 5.0V, I
C
= 10mA
V
CB
= 30V
V
CB
= 30V, T
A
= +150°
C
V
CE
= 5.0V, I
C
= 10mA,
f = 100MHz
V
CB
= 10V, f = 1.0MHz
7. Short duration pulse test used to minimize self-heating effect.
BC847BVN
Document number: DS30627 Rev. 7 - 2
2 of 6
www.diodes.com
March 2015
© Diodes Incorporated
BC847BVN
Electrical Characteristics: PNP, BC857B Type (Q
2
)
(@T
A
= +25°C unless otherwise specified.)
Characteristic (Note 8)
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Base-Emitter Voltage
Collector-Cutoff Current
Gain Bandwidth Product
Collector-Base Capacitance
Note:
Symbol
BV
CBO
BV
CEO
BV
EBO
h
FE
V
CE(sat)
V
BE(sat)
V
BE(on)
I
CBO
f
T
C
CBO
Min
-50
-45
-6
220
—
—
-600
—
—
—
100
—
Typ
—
—
—
290
-75
-250
-700
-850
-650
—
—
—
200
3
Max
—
—
—
475
-300
-650
—
-950
-750
-820
-15
-4.0
—
4.5
Unit
V
V
V
—
mV
mV
mV
nA
µA
MHz
pF
Test Condition
I
C
= -100µA, I
B
= 0
I
C
= -10mA, I
B
= 0
I
E
= -100µA, I
C
= 0
V
CE
= -5.0V, I
C
= -2.0mA
I
C
= -10mA, I
B
= -0.5mA
I
C
= -100mA, I
B
= -5.0mA
I
C
= -10mA, I
B
= -0.5mA
I
C
= -100mA, I
B
= -5.0mA
V
CE
= -5.0V, I
C
= -2.0mA
V
CE
= -5.0V, I
C
= -10mA
V
CB
= -30V
V
CB
= -30V, T
A
= +150°
C
V
CE
= -5.0V, I
C
= -10mA,
f = 100MHz
V
CB
= -10V, f = 1.0MHz
8. Short duration pulse test used to minimize self-heating effect.
Thermal Characteristics
– Total Device
200
1,000
P
D
, POWER DISSIPATION (mW)
100
h
FE,
DC CURRENT GAIN
R
θJA
= 833
°
C/W
150
100
10
50
0
-50
0
50
100
150
T
A
, AMBIENT TEMPERATURE (°
C)
Figure 1. Power Dissipation vs. Ambient Temperature
Total Device
I
C
I
B
= 20
0.1
1.0
10
100
I
C
, COLLECTOR CURRENT (mA)
Figure 2. Typical DC Current Gain vs. Collector Current
(BC847B Type)
1
0.01
0.5
f = 1MHz
V
CE
, COLLECTOR-EMITTER
SATURATION VOLTAGE (V)
0.4
CAPACITANCE (pF)
0.3
10
0.2
T
A
= 100°
C
6
C
ibo
0.1
T
A
= 25°
C
C
obo
0
0.1
T
A
= -50 °
C
1.0
10
100
I
C
, COLLECTOR CURRENT (mA)
Figure 3. Typical Collector-Emitter Saturation Voltage
vs. Collector Current (BC847B Type)
V
R
, REVERSE VOLTAGE (V)
Figure 4. Typical Capacitance Characteristics (BC847B Type)
BC847BVN
Document number: DS30627 Rev. 7 - 2
3 of 6
www.diodes.com
March 2015
© Diodes Incorporated
BC847BVN
1,000
T = 25°C
A
f
T
, GAIN-BANDWIDTH PRODUCT (MHz)
V
CE
= 10V
-1,000
h
FE
, DC CURRENT GAIN
V
CE
=5V
V
CE
= 2V
-100
100
-10
10
0.1
1.0
10
100
I
C
, COLLECTOR CURRENT (mA)
Figure 5. Typical Gain-Bandwidth Product
vs. Collector Current (BC847B Type)
I
C
I
B
= 10
-1
-1
-10
-100
-1,000
I
C
, COLLECTOR CURRENT (mA)
Figure 6. Typical DC Current Gain vs. Collector Current
(BC857B Type)
f = 1MHz
-0.5
V
CE(SAT)
, COLLECTOR-EMITTER
SATURATION VOLTAGE (V)
-0.4
CAPACITANCE (pF)
-0.3
10
Cibo
-0.2
T
A
= 150°
C
T
A
= 25°
C
6
Cobo
-0.1
T
A
= -50°
C
-1,000
-1
-10
-100
I
C
, COLLECTOR CURRENT (mA)
Figure 7. Typical Collector-Emitter Saturation Voltage
vs. Collector Current (BC857B Type)
-1,000
f
t
, GAIN-BANDWIDTH PRODUCT (MHz)
0
-0.1
V
R
, REVERSE VOLTAGE (V)
Figure 8. Typical Capacitance Characteristics (BC857B Type)
-100
-10
-1
-10
-100
I
C
, COLLECTOR CURRENT (mA)
Figure 9. Typical Gain-Bandwidth Product
vs. Collector Current (BC857B Type)
BC847BVN
Document number: DS30627 Rev. 7 - 2
4 of 6
www.diodes.com
March 2015
© Diodes Incorporated
BC847BVN
Package Outline Dimensions
Please see AP02002 at http://www.diodes.com/datasheets/ap02002.pdf for the latest version.
A
B
C
D
G
K
M
SOT563
Dim Min
Max Typ
A
0.15 0.30 0.20
B
1.10 1.25 1.20
C
1.55 1.70 1.60
D
-
-
0.50
G
0.90 1.10 1.00
H
1.50 1.70 1.60
K
0.55 0.60 0.60
L
0.10 0.30 0.20
M
0.10 0.18 0.11
All Dimensions in mm
H
L
Suggested Pad Layout
Please see AP02001 at http://www.diodes.com/datasheets/ap02001.pdf for the latest version.
C2
C2
Z
G
C1
Y
X
Dimensions Value (in mm)
Z
2.2
G
1.2
X
0.375
Y
0.5
C1
1.7
C2
0.5
BC847BVN
Document number: DS30627 Rev. 7 - 2
5 of 6
www.diodes.com
March 2015
© Diodes Incorporated
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